8 i, Tha deff, vclodity nearly Facueanes &o maxtunven vol, whan eedite eld bo vartey Le gero to thcenbodd vous. [POOOWlerm) © Abo e ‘Orn Be dnd dct velocity decreabes and Oe “caction Ngh-fteld dornatn & x Su Oy Delft velocty Cerne) 5 1 & a 5 field (eN/crn), Fig-\ Ga B-Scharotic diograrn and : Arle us field grape F Ginn effect died hon Giorrz applied l6V arnp pulse and tong doration de inpst «0 O-type Gos of &6 xio3, tre frequency vod 4eBGIg, he Comerit cscillation ochrede St dhad duration - Ans/6m in dhortgontal a OdZAlan in vertical aX 6) Radle - Udall Rtns - HElsom (RoW) Theory 2- The fondamentel concept of RU Theory So differentia negative rentstane devetord’ i - p-state W-V compound wheither usttage EN current Cp Oppdted wo Lermtaale Ef voampls There are twee _racden — 9 Voltage —contralled mode%- current denstte can be moulttuatueds There io oO high field _dornatnue are formed, vse parating 400 Low = eld _cegions_4“Ehe interfam separating both bow § “high field o_ perpendicular to plane : Ao _vottage “uncteaa es pat reaches da mmanceraum density ,-and cthon us current density, storts decre aning FP couning & negalive resistance en vagh field — Figrh igh fieid Gomotin of VOM _W) Corvrent. controlled Fnode §: vottage coon be epuliivar Wed © The high: current filaments fore parallel) ral Held directton. vow paratting ainto hfgb coment Low corrent ee ee ~ Filament of Com FgS Ive E_foc Fig-6 Highs corres| In a tuw0-valbey gernt- Conductors (Gans) a Shigh - moblttty Ususer ‘Valley ul SeParat4 by an energy of O:36eV From A Gow - MolotitE, upper valleys 4 { Clacton densities dn Lower arnd oppep | Calley» remain che Same onder equllioreom, Ec, > 70 elactron transfer - to weper O ey, SES as a tranefer Leon ' ot lower valley +o upper valley E>ty > etoctrons transfer ‘to Upper calley Doe to Lows motility of upper valley, decreaped ao LOltage uncreabe u At watey. Mee Lowen ORCS! SOOT /V-Se 0.26 ey } 180 ere? v-Sec ¥en ee yon r ae Eh te at lle I~ & Sve € fol 4The three condttions..to.be saittePted 1) Separation spor lower vatiey ood ____Upper Uv ~ Sb be aklbast © 026eV a) Re eB otha 7 fil) CleetPon® WH Lower wobtny s most have Shigher mobility .smabbuc ehfp chive mors Wherean elactronb in shigher Vodken must thave Wovoer nobitity -crigher effective Soe = -— ©). Read Diodes - e6 or Koad Afade, waso theoreticoliy reHerrtted Dy Road &n 1a58, Bot experimen fon, Cepocted toy, dee et of tna 1965 _4t Sb-an nt-p-D-p* strvcture, Where Soperse= _vipt bo nigh - doping motertal ,G- inte nsic __rarerte® e ~The too fegiond > thin p-layer ks where awalonche | mottip ication occurs - _| vy) offer Bo t Cegion geninare (Avil region, vorure, neroted dhalen must move [deft co a do Or cegen: The Read diode Lin mounted kn mtcrowan: cout —ubn _cewerse bind @ positive dna Gloves a field enoving from Loft to cig: The maxtrnurn field occbrs nears _at=p region _ Cokout creseveral hundced KV/ erm), whitch | Pro utder energy deo _ carrlergs , Ko Rnock Loin electrons Frito Conduction tcand , _Pradua e©- 1S Poles cTha elections drift toCegion and choles defft dhocogh space - charge region to pt with Constant art Pt velockty “of lotemjs for S The field dine eeghout Space —chertye. fegion of SKV/ om Mereartows® Sots lEmme ly le Medved = wa pcorer iy Weg Fig-4 Field Cistribotion Be e 8 God crit of gre epics Cottey Read Diode os oat cocrent of Read dicde fd) (MATT Chisde®- Impact lonigetton Avalanche Trangte Time (impart) dinde, Lohane Ubante phybtcal mechanesm Bs ra knteroction of Umpact cfonggarion and dbransit time of Charge carréens: gene uad- tare dicdes are (MeATT diodeThine dteden eathivtt a. dtferenitiot negative doo elects 8— _f 2 t SSE 3 ~ : € 1 2 U — Fg TrRaPatt Diade Tes iz a — Fiig-l4 Voltage § Corrent a : for TRAPATT | _@t point A, déode. current turns ON The dicde dnitLathy charg Gio Winsor capacater “torn Sufficient nomber of corréers ie gensrafed, . patticlea curren exceeds ~SCxtcrnal current exceeds Canning Coltag to decreane , drown from @ toc During thie tine, dense podsoma sof cO, Pare > Creafen_,2ome sof cinich sages: deet_out of depletion , fart are reducing “vottag to De| Ae point EB ,plasrna ub wernoved 1 re se Auay 7 | and electrons ate Temain: AS ~SLduad cf, | voltage Gncreabeo to point F «Gk point = aw @Mwternad Sharge BB rernoved and Chom Pont F to G, Khe diode chargth Wie a Capacitor At Point &, correnE Qe2b Zero ang Voltage Cermains —constort for nant halls Cuy, Eat) = E mr WNa Te WN y + &s “Es the MUSE ng 2y PZ@oadanche gore VC ta “ay Nix re B & FOG => charging Ort => plasma £o ration 63D PE > plasma Ceducti : for > residval eaxracie nr £) Bam tt Diosest Barrer trfected Tranet ~ttma devices Shave. donq AsGhE vegcons Grane carters genwca s by rrdinoctty carrier injection fro forward - b&o gonctions Several structures of BARETT diode Undude,— PNP, P=n-V-—p, P=n- metad, ¢ratate N- Mt ger“The dtode _ Capotte— Sees for era natt_angiso between The opttmoce toate _angte te _4e6u» eres thins motsy Khan IMPATT dtedent For m-0=™ onortype S “tuna Ceol Schottky _tarrtecs © Pt eqptitoctons, ,, be — _Or8beV e Due +t8 SW forword = bidsed » trove occurs. i © 8) rapea increane ef carter Wqfection PrOars— quwed decreaxtng potentiok ACLLO ee focwacd - biased -metat- SiC contact _ _ 0 AM apparent Sya transit angie of inflected ine ___ckhot troverseo _9¢ depiction regan __ - _ tha. copia —rincreape fia _tecmiinos carters wit. ~_oppited vottoge be _couned toy _ctharmtonkcs note. __Anfeckion nto semicondoctor a depution 4 a __of Teuense-oiazedt contact reachs> nets enti _ device tinickenanS er = Crfticad = as “Woe ght eee a Sone) =o \o* - / St fo ~gandustched “teem ai 4 : - —S = — pe Se holeS ae ~— to 2 -— Fg-16 eon BARRETT Fig-\6%- Tvis vV_ of 2 —___ dtede, and erecgy band dtagrars — BA gir Diode.| CLO mfcrowave ter performana es type BARITT diode Wan obtained for entire S-bana , 4 to & Gg Tha moat mort POWEM LOA OWA Soom | GoQcrigs Chiclency woo? JoR%s Tha AIdebard cise { found to be aa-gaB at (MHg GNA AMA WET, Doe dhan ailicon IMPATT scomparaite cS Ga-AS transCe Aactron os lator Qo Goekte Shoct oles on? @) Microstite Lina | 7 The mtcrousaue Sovid- stole devote. wb usu forrrtcated ao semtcondoctor chip ¢ Wkcrowave Snregrated ckecvtts ott microstrép Uknes are Cornmonty Unwed on hese ChipsseeTha mE&cros Qings Be Lsvably Called WP SPEO ~stttp Line: Moder on mirostcte QEros Ae QuaBbe - tran: atactrte and rmmagnette Sart CTEM) , $0 LS kinoory : cs ee ‘ Fig- 18 Field dined of miccroSteip Linesia _chacacterlattea efenpedena ~ eh f Becki pe usive - Over= Ground transmlssen, hing and _vstag =ran ean sformatiion of rectangetar __Conduclor ko equkvalent circular condvaer i -_— Be Goes” ee ap A= 0-670 (O98 44,5) Ege = 0049 Sfp O67 [3 2o 28%. wm [eah | Weom —N@aean — LOefu +e Crarrow) _ = 333 4 CaaS 5 4 Ner © cusidey a 4 a oe _ 7 Detockty -of | Propagation = fe . a a oo _ hee, Power lesser juse_ Rmow : [ Oe ee te Gem ee -tecnvstion con stant @=dBlaR = ay dy tic 2 °C2) i dletadete alienvotion. a + a ~ Constant = — te = omic _otlen vatito yp = ae Constart _ : - I as a ee ie i cea dave NP fos Pe Now oe eC) SP Ce) Di 7 ‘ ele ckeeg, oe ee = 89-3 46 nap tO t 2 Ee: te de Lohare tane = Soe Wy ~ Eve =i = Eel 25 ©? Waoelengdy *s “Kee i £Lreo oe Ormic oattlencation Coley= ge z: consvara CC)= 8-686 B a, n There are other Losses Ee Radgatton Wosses BER Qroen by Prog = R oes a b 3 2 Fa | Rr Cradtattion Cestetene) = MOTE (MAS)phere Flere = Ere +! = Septet _ Ere Ere TE pe, & ee e-\ ie a — Se Gosty Sooee F__microst?0_ufina & gisen hy 0 90 _ 80440 oe Qe = BeBe ee ee 8 8Q5 A Rete (HP) a Be RM tie eS — &O°63h [F ge eal _ mes g ; 7 ge Bld ib © fF tone —- e ov Vemma —~__Fig-148-Paraldat Step Lino . a = ~ A parole SetBUne RA Belo toe > condGdtse -branamésston Line, $0 ft com © _O Quant -TEM nodes ;Fon (sales (R=Gi-0) deetecetrec L Catong @tete) = usd fra | “ * Ege Een } At atrtss shave SHAR Cr HATES Ang Akelactree Ga thor whont. conduckance ee a a Fra charactentatte enpedence 2o-fE «df. 2 S. == WIs>7> d “Sal eg” Jew <& F Neg F decy Propogation constant (ve )= End Ge G05 : Recut Gece oi (RIE +h, JE ) + Serie vation COngicone v=t(RE sof) & SY Xa phone Constant B= wl mdi a| a ' psisto_ based = Power Goopien A microstrtp- Barred’ power copter ub a. cructeg | Apeeponent dren microwave and KE ByBLEO™” , woe obo cornbine _ Gactrommagnetic “Poser un panemteston &inay: "SE raw ‘planar Stroctore,” Fraking ut cam cto dat egrale Grito cnoderea merovoave “etreuits Shay Com he operctted oer kde frequency range, Fan alse Shaye good CoupLing casio control c Se suedy Uhcus goed Boolettion between dn pei, and Sotprt “ports ard ore copadide of neg Power dhanatings <= np 2 Badan coramuntcation sytem,d) Microsti&p ~ based Pouver dtotders- Fower -utden Gs a Crporant used #0 SOLE an Uncorakng EM signal dnto to oF pi Eqpod CM Unequod® partes Ak ue davtgned a { Corapact and plarar structure Gok Integr i MwMACSSCi sransmkasion Lin = cooptad AarrentS On a Ciekeckefe sodstrate “The Ptenary POCPOSe K ‘poe dtutder do 40 tranefer okbictert! Beara one an put Sransmissio % so a Wile maiakabnia, Mine LO Mukkipla output, Line ons rng i oO dod dpe dance mostchin o 2 Ghee Oe eae Preaquency range , good impede oy and YWroloion Getwan Pores : e a 20 Rg a> LRURinsor o 7S owen divider ig - 22: Zu. pee ee Sobetrate 8 arent eyiod — power divider > The power tb dtvided CQLLODLy arnong btn? output ports o They Play A folate role ua Signal outing and distribution th RF, Tadar and teot and meanvremert eQut prments: