Power Diodes:

• Diode Characteristics

A power diode is a two-terminal pn-junction device and a pn-junction is normally formed by alloying, diffusion, and epitaxial growth.
The modern control techniques in diffusion and epitaxial processes permit the desired device characteristics. Figure shows the
sectional view of a pn-junction and diode symbol. When the anode potential is positive with respect to the cathode, the diode is said
to be forward biased and the diode conducts. A conducting diode has a relatively small forward voltage drop across it; the magnitude
of this drop depends on the manufacturing process and junction temperature. When the cathode potential is positive with respect to
the anode, the diode is said to be reverse biased. Under reverse-biased conditions, a small reverse current (also known as leakage
current) in the range of micro- or milliampere flows and this leakage current increases slowly in magnitude with the reverse voltage
until the avalanche or zener voltage is reached. Figure shows the steady-state v-i characteristics of a diode. For most practical
purposes, a diode can be regarded as an ideal switch, whose characteristics are shown in Figure The v-i characteristics shown in
Figure a can be expressed by an equation known as Schockley diode equation, and it is given under dc steady-state operation by
𝑉𝐷ൗ
𝐼𝐷 = 𝐼𝑆 (𝑒 η𝑉 )
𝑇

where ID = current through the diode, A;

VD = diode voltage with anode positive with respect to cathode, V;
IS = leakage (or reverse saturation) current, typically in the range 10-6 to 10-15 A;
η = empirical constant known as emission coefficient, or ideality factor, whose value varies from 1 to 2.
 Reverse Recovery Characteristics of Diode

The current in a forward-biased junction diode is due to the net effect of majority and minority carriers. Once a diode is in a forward
conduction mode and then its forward current is reduced to zero (due to the natural behavior of the diode circuit or application of a reverse
voltage), the diode continues to conduct due to minority carriers that remain stored in the pn-junction and the bulk semiconductor material.
The minority carriers require a certain time to recombine with opposite charges and to be neutralized. This time is called the reverse
recovery time of the diode. Figure shows two reverse recovery characteristics of junction diodes

I I

t t

IRR
trr Abrupt Recovery
IRR
Soft Recovery trr

The soft-recovery type is more common. The reverse recovery time is denoted as trr and is measured from the initial zero crossing of the diode
current to 25% of maximum (or peak) reverse current IRR. The trr consists of two components, ta and tb. Variable ta is due to charge storage in
the depletion region of the junction and represents the time between the zero crossing and the peak reverse current IRR. The tb is due to
charge storage in the bulk semiconductor material.
 Power Diode Types
Depending on the recovery characteristics and manufacturing techniques, the power diodes can be classified into the following three categories:

1. Standard or general-purpose diodes

2. Fast-recovery diodes

3. Schottky diodes

General-Purpose Diodes: The general-purpose rectifier diodes have relatively high reverse recovery time, typically 25 s; and are used in low-speed applications,
where recovery time is not critical (e.g., diode rectifiers and converters for a low-input frequency up to 1-kHz applications and line-commutated converters). These
diodes cover current ratings from less than 1 A to several thousands of amperes, with voltage ratings from 50 V to around 5 kV. These diodes are generally
manufactured by diffusion.

Fast-Recovery Diodes: The fast-recovery diodes have low recovery time, normally less than 5 s. They are used in dc–dc and dc–ac converter circuits, where the
speed of recovery is often of critical importance. These diodes cover current ratings of voltage from 50 V to around 3 kV, and from less than 1 A to hundreds of
amperes. For voltage ratings above 400 V, fast-recovery diodes are generally made by diffusion.

Schottky Diodes: The charge storage problem of a pn-junction can be eliminated (or minimized) in a Schottky diode. It is accomplished by setting up a “barrier
potential” with a contact between a metal and a semiconductor. A layer of metal is deposited on a thin epitaxial layer of n-type silicon. The potential barrier simulates
the behavior of a pn-junction. The rectifying action depends on the majority carriers only, and as a result there are no excess minority carriers to recombine. The
recovery effect is due solely to the self capacitance of the semiconductor junction. The recovered charge of a Schottky diode is much less than that of an equivalent
pn junction diode. Because it is due only to the junction capacitance, it is largely independent of the reverse di/dt. A Schottky diode has a relatively low forward
voltage drop.
 Power Transistors
Power transistors have controlled turn-on and turn-off characteristics. The transistors, which are used as
switching elements, are operated in the saturation region, resulting in a low on-state voltage drop. The
switching speed of modern transistors is much higher than that of thyristors and they are extensively
employed in dc–dc and dc–ac converters, with inverse parallel-connected diodes to provide bidirectional
current flow. However, their voltage and current ratings are lower than those of thyristors and transistors
are normally used in low- to medium-power applications. With the development of power semiconductor
technology, the ratings of power transistors are continuously being improved. A transistor can be
operated as a switch. However, the choice between a BJT and an MOSFET in the converter circuits is not

obvious, but each of them can replace a switch, provided that its voltage and current ratings meet the
output requirements of the converter. Practical transistors differ from ideal devices. The transistors have
certain limitations and are restricted to some applications.
 Switching Characteristics
A forward-biased pn-junction exhibits two parallel capacitances: a depletion-layer capacitance and a diffusion capacitance. On the other hand,
a reverse-biased pn-junction has only depletion capacitance. Under steady-state conditions, these capacitances do not play any role.
However, under transient conditions, they influence the turn-on and turn-off behavior of the transistor. The model of a transistor under transient
conditions is shown in Figure, where Ccb and Cbe are the effective capacitances of the CBJ and BEJ, respectively. The transconductance, gm,
of a BJT is defined as the ratio of ΔIC to ΔVBE. These capacitances are dependent on junction voltages and the physical construction of the
transistor. Due to internal capacitances, the transistor does not turn on instantly. Figure illustrates the waveforms and switching times.
VB
V1

t
Ccb -V2
B C IB

βIB t
rbe Cbe
rce IC ICS
0.9ICS
0.1ICS
t
td tn ts t to
tr f
E