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Ke-sò͘, 14
Spectral lines of silicon
Ki-pún sèng-chit Miâ, hû-hō
Ke-sò͘, Si Eng-bûn
silicon Phian-miâ
sia̍k, si-lí-khóng Gōa-hêng
crystalline, reflective with bluish-tinged faces Ke-sò͘ tī chiu-kî-piáu lāi ê ūi-tì
Goân-chú-hoan
14 Goân-chú-liōng
28.085[ 1] [ 2] Goân-sò͘ lūi-pia̍t
lūi-kim-sio̍k Cho̍k , hun-khu
14 cho̍k p khu Chiu-kî
tē 3 chiu-kî Tiān-chú pâi-lia̍t
[Ne ] 3s2 3p2 per shell
2, 8, 4 Bu̍t-lí sèng-chit Siòng
kò͘-thé Iûⁿ-tiám
1687 K (1414 °C, 2577 °F) Hut-tiám
3538 K (3265 °C, 5909 °F) Bi̍t-tō͘ (sek-un )
2.3290 g·cm−3
2.57 g·cm−3 Iûⁿ-hoà-jia̍t
50.21 kJ·mol−1 Cheng-hoat-jia̍t
383 kJ·mol−1 Jia̍t-iông-liōng
19.789 J·mol−1 −1
cheng-khì-ap
P (Pa)
1
10
100
1 k
10 k
100 k
tī T (K)
1908
2102
2339
2636
3021
3537
Goân-chú sèng-chit Sng-hòa-sò͘
4 , 3, 2, 1[ 3] −4 amphoteric oxide) Tiān-hū-tō͘
Pauling scale: 1.90 Tiān-lī-lêng
1st: 786.5 kJ·mol−1 −1 −1 more ) Goân-chú pòaⁿ-kèng
empirical: 111 pm Kiōng-kè pòaⁿ-kèng
111 pm Van der Waals pòaⁿ-kèng
210 pm Cha̍p-lio̍k Chiⁿ-thé kò͘-chō
diamond cubic Siaⁿ-sok (sòe kùn-á)
8433 m·s−1 Jia̍t-phòng-tiòng
2.6 µm·m−1 −1 Jia̍t-thoân-tō-lu̍t
149 W·m−1 −1 Tiān-chó͘-lu̍t
2.3×103 Ω·m (at 20 °C)[ 4] Lêng-phāng
1.12 eV (at 300 K) Chû-sèng
diamagnetic [ 5] Young hē-sò͘
130–188 GPa[ 6] Shear hē-sò͘
51–80 GPa[ 6] Bulk hē-sò͘
97.6 GPa[ 6] Poisson pí
0.064–0.28[ 6] Mohs ngē-tō͘
7 CAS teng-kì pian-hō
7440-21-3 Le̍k-sú Hō-miâ
after Latin 'silex' or 'silicis', meaning flint Chhui-chhek
Antoine Lavoisier (1787) Hoat-hiān kap siōng chá ê tông-ūi-sò͘
Jöns Jacob Berzelius [ 7] [ 8] hō-miâ
Thomas Thomson (1817) Chòe ún-tēng ê tông-ūi-sò͘
Chú bûn-chiong: Ke-sò͘ ê tông-ūi-sò͘
Ke-sò͘ (珪素/硅素; hû-hō: Si ; La-teng-gí Silicium ; Eng-gí: silicon ), ia̍h hō chò sia̍k (矽), mā thang kóng Si-lí-khóng , sī chi̍t khoán hoà-ha̍k goân-sò͘ , goân-chú-hoan 14, sio̍k thòaⁿ-sò͘ cho̍k , sī 4-kè ê lūi-kim-sio̍k . Tī Tē-kiû ê tē-khak , silicium tē-jī chè ê goân-sò͘, it-poaⁿ ē chham sàng-sò͘ ha̍p-chò SiO2 . Tī kang-gia̍p èng-iōng hong-bīn, silicium sī chè-chō pòaⁿ-tō-thé ê chú-iàu gôan-liāu.
↑ Conventional Atomic Weights 2013 . Commission on Isotopic Abundances and Atomic Weights ↑ Standard Atomic Weights 2013 . Commission on Isotopic Abundances and Atomic Weights ↑ Ram, R. S.; et al. (1998). "Fourier Transform Emission Spectroscopy of the A2D–X2P Transition of SiH and SiD" (PDF) . J. Mol. Spectr . 190 : 341–352. PMID 9668026 . goân-loē-iông (PDF) tī 2012-02-09 hőng khó͘-pih. 2016-05-23 khòaⁿ--ê . ↑ Eranna, Golla (2014). Crystal Growth and Evaluation of Silicon for VLSI and ULSI ISBN 978-1-4822-3281-3 . ↑ Magnetic susceptibility of the elements and inorganic compounds , in Lide, D. R., pian. (2005). CRC Handbook of Chemistry and Physics (86th pán.). Boca Raton (FL): CRC Press. ISBN 0-8493-0486-5 . ↑ 6.0 6.1 6.2 6.3 Hopcroft, Matthew A.; Nix, William D.; Kenny, Thomas W. (2010). "What is the Young's Modulus of Silicon?" . Journal of Microelectromechanical Systems . 19 (2): 229. doi :10.1109/JMEMS.2009.2039697 . ↑ Weeks, Mary Elvira (1932). "The discovery of the elements: XII. Other elements isolated with the aid of potassium and sodium: beryllium, boron, silicon, and aluminum". Journal of Chemical Education . 9 (8): 1386–1412. Bibcode :1932JChEd...9.1386W . doi :10.1021/ed009p1386 . ↑ Voronkov, M. G. (2007). "Silicon era". Russian Journal of Applied Chemistry . 80 (12): 2190. doi :10.1134/S1070427207120397 .
