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SOI Solutions: Bonded SOI Process Flow

IceMos Technology is a leading supplier of 100-200mm thick-film SOI wafers for IC and MEMS applications, with over 20 years of experience in SOI manufacturing. They offer a wide range of SOI substrate specifications and work with customers to select the optimal solution for their needs. IceMos aims to provide world-class quality and service at a competitive cost through continuous process improvements.

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Saurabh Kumar
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47 views2 pages

SOI Solutions: Bonded SOI Process Flow

IceMos Technology is a leading supplier of 100-200mm thick-film SOI wafers for IC and MEMS applications, with over 20 years of experience in SOI manufacturing. They offer a wide range of SOI substrate specifications and work with customers to select the optimal solution for their needs. IceMos aims to provide world-class quality and service at a competitive cost through continuous process improvements.

Uploaded by

Saurabh Kumar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SOI Solutions

IceMos Technology is a leading supplier of 100-200mm thick-film


SOI wafers for a large range of IC and MEMS applications. With
over 20 years experience in SOI manufacturing, we offer an
impressive specification range, which is amongst the widest
Applications available in the market.

We have extensive experience in a variety of SOI substrates


Our customised SOI solutions are used and our highly skilled applications engineering team is available
in the following fields: to assist you to select the optimum combination of parameters
for your requirements, ensuring that you receive the perfect
SOI solutions for MEMS/MST custom SOI solution for your application.
Bio MEMS By making continuous improvements to our processes in a Lean
RF MEMS Six Sigma environment, IceMOS Technology offer world class
Optoelectronics product quality, competitive cost structure plus rapid turnaround
Smart Power makes IceMOS Technology your ideal SOI partner.
Advanced Analog ICs
Luxury watches

End Markets:

Telecommunications
Medical
Automotive
Consumer
Instrumentation

SOI Wafer with <1.5mm edge terrace

Bonded SOI Process Flow

5 Hannahstown Hill, Belfast, BT17 0LT, United Kingdom Phone +44 2890 574773 www.icemostech.com
SOI Specification
Parameter Specification Range
Wafer Diameter 100, 125, 150 mm 200 mm
Handle Layer Specifications
Handle Thickness 200–1000 µm 500-750 µm
Handle Thickness Tolerance ±5 µm
Stack Thickness ≥280 – ≤1250 µm
Dopant Type N or P
Doping N type: Phos, Red Phos, Sb & As
P type: Boron
Resistivity ≤0.001 – ≥10000 Ω-cm
Growth Method CZ, MCZ or FZ
Crystal Orientation <100>, <111> or <110>
Backside Finish Lapped/Etched or Polished
Buried Oxide Specifications
Thermally Oxidised Buried Oxide 0.2 – 5.0 µm grown on Handle, Device or both wafers
Thickness
Device Layer Specifications
Device Layer Thickness ≥1.5 µm 5-300 µm
Tolerance ± 0.5 µm ±0.8 µm
Dopant Type N or P
Doping N type: Phos, Red Phos, Sb & As
P type: Boron
Resistivity ≤0.001 – ≥10000 Ω-cm
Growth Method CZ, MCZ or FZ
Crystal Orientation <100>, <111> or <110>
Buried Layer Implant N type or P type

5 Hannahstown Hill, Belfast, BT17 0LT, United Kingdom Phone +44 2890 574773 www.icemostech.com

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