ADC

JUNCTIVN DIODE

# P-N unctim
he holes

Comes and electrons

CoamerS
he holes

Cories and he electons monrinonty chomg

COgmes R
hese tuo froteials
riardy
ond chercally tombiñed to torm 'a
Tunction such geni cordutor PA unctn
P. N electonio device called diode
popular
electro nic circits.
elernent
) Bommey poBentiaf indicates he anount of. voltao

utere neloity.
be ophed
proper the <fiow o èlectrona and
to etant
jndian.
 p.egjan

’ clectn

+ole'

potential barie

Reprnsentatim of
Borroter poten tial
he. p-nN. Junction has tuo teminale called
electrodes, 0re each frompeqon ond
electrodes , it is called diode
tuo
due to
(di+ eectrnde).

Electmde| lectrde 2
. diode
Ohmic
ortracts

-Anede Catio be
 movement e dtion Dire
diade
R
w cuent
to
rcti, -ta
attonm petential
Biainq (a)
fomwand
Spbele
R
P
Revistor
tinitng cuyeat
bias -omuord said junction þiaárg P-N
be to Is
tie erce bias: fomsond called cordition
is
Connected
ard -the the
Cernected temiral that ay
to is the
eorreçted
i. ttemal
diode: Tunction P-N of biaForwovd
s
equiibnium
t
biOsItq caed is
Aevice
ctrric .voltotage esterral
 7
juten
is
hygmin
Cannet e nyontuetton

oehn thehmi
potertia tmin! ef
electons hoier potental
to
gon. iibey pocilie tona!
pushs holes
peed
hy he ositive tevnind ond on
uncton agint bamer poterita. thic the
banie potertial "bis aducer
width
ic incmared at a panfrul
kcores
aluei the deletion mgion Cariegs
Such that

Cán cOss
Caiers Congtitute

cutent called fonwand cuTnt

Once Corduction electrori enteas
bcome alence electront than ay
to boe touad he
t6 positive teomina
 Olemnt Vatence ectone
in
frovt dim tion
at electrons in
k meverrnt
caiens. This cae hoe
hile unont

movement electons nhich

Cannens hic the electeon cunent 4lere, the

ovenall Cnent due to

Them eawries can trql clord

civcuit ond ,elativly ln tument

dimection ofow electons rorn

Note he Jiection o -Tow etectrore and

COen ti onal curment is °poite to each
-fomuan bas.

the

junction -fomuort biased conition are

to hat borien rotential but t value is
almost cqual to harmier potntal.
 from
the electrons fre he
s
pegin he unction.
ve he
the om
bolks terminal
attacts
Ýe habias, is
uncion Np. a Ah
R
width Regton
tve ions -Ve
Jmobileins P-reqim Irmebilo
(a)
tatia Peprestn Symholic Ravese
R
P
imiting resistoy
cuvnent
unotion
biosing'P-J
Revese called corditton
batteng ternial
the esfhe 4Ve to
totty te"COnFected
ot
on. ond ve
teminal hot
Voltage external
D
diode' uncton .p- f bios
 So no Carvies ade to

junction holes ard otectrons both

h
frorn
junckon depletion gon
widens his cmeates positive ions ord tence

char p- talon and

ard. herce ctae n- regGa

ioCTares barrier
he dapletion qjon
potential jurction also inCTea8es.

In a steady state, majonity

Stes holes ard electont stop ovinq
-fom.juneion. +We side

Dus to incveace of banier potential, dra

the, alectons rom the P-side touand te
he -Ve side borier
of battoy Saslaly
the holes from

touonds he -Ve
þattng
Thu. elechons p-sids and holec
camen. Hence
rinoàty dog catienc
CURent Hloux dye to
minorty hong
which s
Veny small (micn amperu nA)
 Volt onpeme (v- 1) choncteistics of a iode!

a diode euten connected in

te sonse
electieal çincuit be judqed fom ts chamactetics
(on ) - I chanactemtics
krown volt -atnpes
chovactestiis is

aCosS the Inction and the

P-N unction

CvOS th
diode
he diode

tomwavd charactenistics can be d'vided into

Eatally
gions.
(ma) (9

p-Q and onovds

D

knee
Av
 o-P:

As tong tess fhan Cut- in

tral!. rocticay
-oung is

-his Cumrent

Reqion P-Qand ehuwards!

As V inceases
incn touomds V he width t
delgtion
y e depletiçn eqion becomes ey in ard
he cuent I . suddenly inceases. This in cOe in

the curment is natume.

xpohential
h ow ond conventiamal cumment and
treated aueot)
hencoi t is
Foward besistance a diode

the nesistdre otfered by the p-N unetio

diode -forward bds S called

sistance. Jt is' defned

) statio owdrd 'esistance:

fomwand voltug OA

foruand DC CUrrent

esistace!

slepe in he fonwd eheracteit

Riverse charactemi sties P- at uction diode !

-tt Ve(Ravme

Reverse A feverse
Break doun aturahiom
Break.doun uent)

Revere
cumTent
of
peloiy EVese

is to that of forward tence ty

saturato0
oltage is
rgatie Snioly everse

Carmes an
CuTent is due to minority cha the
to cUrnt . ttence
tverse
°Ppoit
Satuaatim cumrent also
As everee voltaqe is incre ased eVeTse,
CuTent increastc initialls kut i atoo aiter ertain
uYTent Tomans constant, equal to th.
satumatiam
Teverse
rument , heough eveTse volta
mereased.
point A whre bre at doun and everse
(uTent

-ho
ncemasing opidy is0s called
chongteistics
 diode!
Revere
i) ReveSe statio esistance:
Ry lid oevese

Paverse saturatn Cyrent

i) ReveTe
AVe
dyami "rOsistances

AIR chorg in
voltbae
Cårent

a diode!
Conplate chaacteitics
fomotrd characteishes
norma

Breakdoun
Raverse
vottoqe kree
Veg
V
knee (cut in
Break doun
Raverse
saturak¡n uent

Devanse
chanacteistics

for qenm ani Um is0-2V

Note he cut in
and for ilcon
o6V Si
V-I chorac ten stic o a diode!
This also known as diodo cu ment
ent cquaton
and is
gnen
A

satuvation cuTrent

votug
Ge ) emissim ceetant Cov)
(eta)
tacto
ldaity
volts
loitay ginent od tempratu
firalent
whene V, kT Vots
k Boltzmanns Conitant 8"62 xI0

T temptratune kelin

Note:
tenpatue
.'.T 243 + 4 300 k

. A sihcon diode hos satunation

Curert ot 412 rano
D4C-Calculate tonp
tunent #t i
bias te
 Given, -3
12 nano

V 0. olts
T
16 00

300 26 xI0 V
kT
600.

e 2(26*16s)
-] t2.62x00
=O- 025 86
5 mA le dit nte m
I
(pit
siicon diode at
2. he voltag
0-1| vote when milt CUment Aous
2.5
s amp
10CTegses to 98 V.
voa
Caleulate the new diode cutent-

Given,

Roon
tenpoahye
T
11600
 1 2 5 mA

3
.5X|0 J,e (26x16)
2.93x10

I?

).93 X0 2(2xID)

Effets of tenperaume On charactem stics!

Case e fonw avd bias the characterisf
of Si diode shilts to the eft at a rate of

tn

Fonand bs
condiion (2
25'c -75'c
Si diode
1T forard
bas eq

35
Y,)
Ravere
biau
lo. 24 pA

15
 t95c
nA80 65c
45'c
nA 20
tump
evey for has Reverse
condition for
(o:4tD.25) Alow
15') (-
035V 025) (0-7- Vo* New,
mV0)5 V 500Y2
temp in
at
 iransition Capocitarce (C1): (oer inin Reverse bia)
ale cnow that Capacitort store lechnc
tn fom t electri Hiel d. his cha
dor by ung tuo electically rordutting latr,
(poced clecd to each cher)
mateial
epomathdy
iesulating calkd dielectnc

Hole
Alide
dagleim , Electoons (Fre
ptype

el

ton
fösitive 1on

Balty
do
Reverse bias
dy

Copacitara means to stox the

the elechic
CT
 copocitarca
electi

cony
fomuont bias)
Diiurion Capacitance : (Occur in

Dajion capacitare is also knou

capacitance.
Electons
Heles o

P-typ

fositive ion

bateny CD:
dv
Fomjand bias
diljusion capacitane
Pectijits :

Cnting AC to DC

Ratifters

-tatt Wave
Full wave Cente tapped
necti icr wave ech{r

ctiticatiom.
corvinting to DC is called

offes 'fouw eitande daing' bJa

diode otes
bids est;tance bias.

+ -D I

tal · Wave

Memax

3X
4X
wt
 V
-may R Imar

wt

Ractifid ou'put voltago leamnt

wlavefonm
) -Average value of output voltage
ONer a

let inpat eltug W V Sin& o- t

The value t the
ver d

Vav vdo
27

Vsin do

cinedo o da

de

Im
 DC power output do

2 R

) Root Mean Sqçae .Value Output votaqe

Can obtained

sing do sin'o do

(-co26) do

ms

Ac
pom
PAC
 treetifi")
of ectifitation

output powem DC

1 input pour
Ac

I"
(Re tR
Re

Sce Re is small;
406/

cin Riple tactor

ot the
value ot conponent
outut
Dc value of thu
cutput vata

thectre (m) vale total oad curtot

The
DC Ac
 AG
m

Ipe
/)? 21
V(m/n
cemponent
of a!
-Arplicaions wave

Used for deriodatation panpore

) Usd
used fo oectikication tcatons
9) frliatione
RMS value
form factor
-Average value
of Hal Wave
Diaadvantaq
Aoss

9) Lou
outpat
contains a lot of
 Futl aave Porbtr:
Defiring
Tutl wave moctilien de birud
that
Current
cOnverts (omptete of
altemair
into
I:J, +),

Pr 5vrso biac
D, fomad hiat

27

ut

wONe<onm output vottage

Ovefom
Peak Jrveve Volta
Paat Iverse max

"he
diode Can withetand
dnectton befone breakdoun: The piak interse voltag
full - wae
of
ectifien . is doue that ¡f
and
The PIV. atrs D
Ware
ctiier
2max PIV 2Vmar

DC
output votage:
I, RL Jnax
cuTrent!.
RMS Value
I Inax

fon toa cto

of curtent
RMs Value
Imi
value ot cuTent

Jmaxa
2v2
 Pak Factor .
Peak voalu of curent Imar
value d curnt
RMS
Imar
Rrctijicati on cing
Dc
output
input
poen
AG eutput power
of -full USave

of futl Wav Re ctifier:

Adventg
) The ctification etficing of tall DOve

ectifienc is double that of halt Wavu

etifiers
of ha- wave Tectifies is 40-6/
fult ee0ave
tuhile the ectificaton. tcienc
ectiteqs 8|:2,
) ihe ipple fact
filten he value
bence is

of foc ton Wave tectifi is