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PN Junction Diode

The document describes an experiment to plot the volt-ampere characteristics of semiconductor diodes in both forward and reverse bias. The apparatus includes a regulated power supply, silicon and germanium diodes, voltmeters, ammeters, resistors, and connecting wires. In forward bias, the diode conducts and the current increases with voltage after reaching the cut-in voltage. In reverse bias, very little current flows. The experiment involves taking voltage and current readings in forward and reverse bias to generate V-I curves and calculate the static, dynamic resistances, and cut-in voltage.

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Rajesh Pyla
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135 views4 pages

PN Junction Diode

The document describes an experiment to plot the volt-ampere characteristics of semiconductor diodes in both forward and reverse bias. The apparatus includes a regulated power supply, silicon and germanium diodes, voltmeters, ammeters, resistors, and connecting wires. In forward bias, the diode conducts and the current increases with voltage after reaching the cut-in voltage. In reverse bias, very little current flows. The experiment involves taking voltage and current readings in forward and reverse bias to generate V-I curves and calculate the static, dynamic resistances, and cut-in voltage.

Uploaded by

Rajesh Pyla
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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PN JUNCTION DIODE CHARACTERISTICS

AIM:
To plot the Volt-Ampere characteristics of a given semiconductor
diode both in forward and reverse bias and to calculate the cut-in
voltage, dynamic and static resistance of the PN junction diode in
forward bias.

APPARATUS:

 (0-30V) Regulated Power supply (RPS)


 1N4007 Silicon diode – 1no.
 0A79 Germanium Diode – 1no.
 Voltmeters: (0-1V) – 1no.
(0-30V)– 1no.
 Ammeters: (0-100mA) – 1no.
(0-100µA) – 1no.
 Resistors: 270Ω – 1no.
1K Ω – 1no.
 Bread board
 Connecting Wires.

THEORY:

The PN junction diode is a device with two semiconductors in


physical contact, one with excess of holes (P-type) and the other
with excess of electrons (N - type).

When the positive terminal of the battery is connected to the


P-type and negative to the N-type, the diode is in forward bias.
Under forward bias condition, the applied positive potential repels
holes, which move towards the junction, and negative potential
repels electrons towards the junction. Eventually, when the applied
potential is more than the internal barrier potential, the depletion
region and the internal barrier potential disappear and the diode
starts conducting.

When the negative terminal of the battery is connected to the


P- type of positive terminal of the battery to N-type, the PN junction
diode is said to be in reverse bias condition. Under the reverse bias
condition, holes from the P-side move towards the negative
terminal of the battery and electrons from the N-side are attracted
towards the positive terminal of the battery. Hence the width of
depletion layers increases and the resultant potential battier
increases, which prevent the flow of majority carriers in both
directions. Therefore, theoretically no current flows or negligible
current flows due to minority charges called reverse saturation
current in the circuit.

CIRCUIT DIAGRAM:

270Ω (0-100mA)
A
+ -
If
+
RPS A +
VS 1N4007
(0-30V) Vf V (0-1V)
_ K _

FORWARD BIAS

1KΩ (0-100μA)
+ A -

Ir
+
RPS K
+
VS 0A79 Vr V (0-30V)
(0-30V) A _
_

REVERSE BIAS

MODEL GRAPH:

Forward Bias
If (mA)

Q-Point
ΔI I

Vr (V) Vf (V)
0 V
ΔV

Reverse Bias

Ir (μA)
TABULAR FORMS:

Forward bias Reverse Bias


VS Vf If VS Vr Ir
(Volts) (Volts) (mA) (Volts) (Volts) (µA)

PROCEDURE:

a) Forward Bias
1) Make the Connections according to circuit diagram.
2) In forward bias, connect the positive end of battery to Anode and
negative end of the battery to Cathode of diode.
3) By varying the supply voltage in steps, note corresponding
Voltmeter and Ammeter readings.
4) Plot the graph between forward voltage (Vf) and forward current (If).

b) Reverse bias
1) Make the Connections according to circuit diagram.
2) In reverse bias, connect the positive end of battery to Cathode
and negative end of the battery to Anode of diode.
3) By varying the supply voltage in steps, note corresponding
Voltmeter and Ammeter readings.
4) Plot the graph between forward voltage (Vr) and forward current (Ir).
CALCULATIONS:
V
Static resistance (RD) = at Q-point
I
V
Dynamic resistance (rd) = at Q-point
I

PRECAUTIONS:

1. Connections must be tight.


2. Readings must be taken without parallax error.
3. Operate the knobs of the RPS smoothly from one position to
another.
4. Current knob of the RPS must always be at maximum position.

RESULT:

Hence the V-I characteristics of a PN junction are plotted.


Vγ (cut-in voltage) = ______ V
RD = ________ Ω
rd = ________ Ω

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