Name: BIBI SAKINA | CMS ID:68558

LAB NO. 06
VI- CHARACTERISTICS OF SEMICONDUCTOR “DIODE”
AND DIODE BIASING
Lab outcomes:
After completing this lab, students will be able to:
 To understand the characteristics of diode.
 To understand the biasing of a diode.

Equipment:
 PC with software
 DC power supply
 Digital Voltmeter
 Digital Ammeter
 Breadboard
 Resistor
Theory:
Diode:
A PN junction diode is a semiconductor device made by joining P-type and N-type materials,
forming a PN junction. It allows current to flow in one direction while blocking it in the
opposite direction.
Structure of PN Junction Diode
 P-type region: Contains holes (positive charge carriers).
 N-type region: Contains electrons (negative charge carriers).
 Depletion region: Formed at the junction due to the diffusion of electrons and holes,
creating a region without free charge carriers.
Terminals:
 Anode (+) → Connected to the P-side.
 Cathode (-) → Connected to the N-side.
Doping:
To create P-type and N-type semiconductors, specific impurities (dopants) are added to pure
intrinsic silicon (Si) or Germanium (Ge). This process is called doping.
P-Type Semiconductor doping:
 Created by adding trivalent impurities (elements with 3 valence electrons).
 These impurities create holes (positive charge carriers).

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 Name: BIBI SAKINA | CMS ID:68558

Common Trivalent Impurities for P-Type:

 Boron (B)
 Aluminum (Al)
 Gallium (Ga)
 Indium (In)
N-Type Semiconductor
 Created by adding pentavalent impurities (elements with 5 valence electrons).
 These impurities provide extra free electrons (negative charge carriers).
Common Pentavalent Impurities for N-Type:
 Phosphorus (P)
 Arsenic (As)
 Antimony (Sb)
 Bismuth (Bi)
Diode Biasing:
Unbiased Condition (No External Voltage)
 At equilibrium, electrons from the N-side diffuse to the P-side and combine with
holes, forming a depletion region as shown in Figure 6.1.
 This depletion region has immobile positive and negative ions, creating a built-in
potential barrier (~0.7V for silicon, ~0.3V for Germanium).
 This barrier prevents further diffusion of charge carriers

Figure 6.1:PN junction Diode Structure

Forward Biased PN Junction:

Forward biasing occurs when an external voltage is applied across a p-n junction diode, with
the p-side connected to the positive terminal of the battery and the n-side connected to the
negative terminal. In this setup, the applied voltage opposes the built-in junction barrier
potential, reducing the depletion region width. As a result, the barrier potential decreases,
allowing a larger number of majority charge carriers (holes from the p-region and electrons
from the n-region) to cross the junction, leading to a significant current flow. The amount of

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 Name: BIBI SAKINA | CMS ID:68558

voltage required to initiate this conduction is relatively low, typically around 0.7V for silicon
diodes and 0.3V for germanium diodes. Once the applied voltage surpasses this threshold, the
diode operates in the forward conduction region, allowing continuous current flow with
minimal resistance.
Key Points:
 When the P-side is connected to the positive terminal and the N-side to the negative
terminal, the diode is forward biased as shown in Figure 6.2.
 The applied voltage reduces the depletion region and allows charge carriers to cross
the junction.
 When the voltage exceeds the threshold voltage (~0.7V for silicon, ~0.3V for
germanium), the diode conducts current.

Figure 6.2: Diode as forward biased circuit

Reverse Biased PN Junction:

The process by which a p-n junction diode restricts the flow of electric current when a
voltage is applied in a specific manner is called reverse biasing. In a reverse-biased p-n
junction diode, the positive terminal of the battery is connected to the n-type semiconductor,
while the negative terminal is connected to the p-type semiconductor. This causes the holes in
the p-region to be attracted toward the negative terminal of the battery, and the free electrons
in the n-region to be attracted toward the positive terminal. As a result, the depletion region
widens, increasing the barrier potential and preventing the flow of majority carriers. Under
normal conditions, only a small leakage current flows due to the movement of minority
charge carriers. However, if the reverse voltage exceeds a certain limit known as the
breakdown voltage, the diode undergoes breakdown, leading to a sudden increase in current.
This property is utilized in Zener diodes and other specialized applications.

Key Points:
 When the P-side is connected to the negative terminal and the N-side to the positive
terminal, the diode is reverse biased.
 This increases the depletion region, acting as an insulator and preventing current
flow.
 A small leakage current flows due to minority carriers.

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 Name: BIBI SAKINA | CMS ID:68558

 If the reverse voltage exceeds a critical value (breakdown voltage), the diode enters
breakdown mode, causing a large current flow.

Figure 6.3: Diode as Reversed biased circuit

Diode (In 4001):

The 1N400x (1N4001……) series is a family of popular silicon diodes commonly used in AC
adapters for common household appliances. Its blocking voltage varies from 50 volts
(1N4001) to 1000 volts (1N4007).

Figure 6.4: Diode symbol

Key Characteristics of Parallel Circuits:

The V-I characteristics of a PN junction diode describe the relationship between voltage (V)
and current (I) across the diode in forward bias and reverse bias conditions as shown in
Figure 6.5. In forward bias, the diode starts conducting after the threshold voltage (~0.7V for
silicon, ~0.3V for germanium), beyond which current increases exponentially. In reverse
bias, only a small leakage current flows until the breakdown voltage is reached. Beyond this
point, the current suddenly increases, potentially damaging the diode unless it's a Zener diode
designed for breakdown operation

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 Name: BIBI SAKINA | CMS ID:68558

Figure 6.5: Characteristics Curve of Diode

Procedure:
 First, we connected the positive terminal of battery with p-side and
negative terminal with n-side.it is called forward biasing.
 We also connected voltage in parallel to the diode to know voltage
drop.
 And Connected voltmeter in parallel to the resister to know the
output voltage.
 Now we run the system and got the output voltage.
 For silicon the forward voltage drop across diode was 0.78 and the
remaining voltage was output voltage.
 Secondly, we connected the diode in such a way that its anode is
connected to n-side of battery while the cathode to the p-side of
battery.it is called reversed biasing.
 We also connected voltage in parallel to the diode to know voltage
drop.
 And Connected voltmeter in parallel to the resister to know the
output voltage.
 We run the system and got the result.
 In reversed biased the output voltage was almost neglect able
because the diode did not allowed voltage to flow.
.

Calculation:

Forward Biased Reverse Biased

S. Voltage
Voltage Voltage Current Voltage Current
No Supply Supply across
across diode across through diode across diode through
voltage (VS) voltage (VS) Resistor
(Vd) Resistor (Vr) (Id) (Vd) diode (Id)
(Vr)
0.00000
1 30 0.8 29.20 0.292 30 30 0.002
3
2 50 0.815 49.18 0.491 50 49.99 0.004 0.049

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 Name: BIBI SAKINA | CMS ID:68558

3 100 0.833 99.17 0.991 100 100 0.01 0.1

4 500 0.875 499.1 4.992 500 499.9 0.049 0.5
5 600 0.8 599.1 5.992 600 599.9 0,059 0.59

Results:

Figure 6.6: Forward biased Circuit Diagram

Figure 6.7: Reversed biased Circuit Diagram

Observations:
specific voltage to circuit in forward biasing’s circuit does not conduct
until it e exceeds 0.7, the threshold In this lab first we did forward biased

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 Name: BIBI SAKINA | CMS ID:68558

circuit observation. We observed that when we provide voltage. After

exceeding this voltage, the circuit starts conducting. Then secondly, we
did reverse biased circuit observation.in reverse biasing we observed that
in beginning only small amount of current leakage occurs which was due
to widening of depletion region. After same time it reached breakdown
voltage .de to which the breakdown of circuit occurred.so sudden current
flow. Which demages the diode.

Department of Civil Engineering

 Name: BIBI SAKINA | CMS ID:68558

Instructor’s Signature: ____________________.

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