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Basic FET Amplifiers

This document provides a formula sheet for basic FET amplifiers used in GATE examinations, detailing types such as Common Source, Common Drain, and Common Gate amplifiers. It includes essential small-signal parameters, voltage gain formulas, input and output impedance characteristics, and applications for each amplifier type. Key notes emphasize the importance of small-signal analysis and typical values for transconductance and channel-length modulation parameters.

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5 views2 pages

Basic FET Amplifiers

This document provides a formula sheet for basic FET amplifiers used in GATE examinations, detailing types such as Common Source, Common Drain, and Common Gate amplifiers. It includes essential small-signal parameters, voltage gain formulas, input and output impedance characteristics, and applications for each amplifier type. Key notes emphasize the importance of small-signal analysis and typical values for transconductance and channel-length modulation parameters.

Uploaded by

surajeeth.edurev
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Basic FET Amplifiers Formula Sheet for GATE

(Analog Circuits)

FET Amplifier Basics


• Types: Common Source (CS), Common Drain (CD, Source Follower), Common Gate
(CG).
• Small-Signal Parameters:
∂ID 1
gm = , ro =
∂VGS λID
where gm is transconductance (S), ro is output resistance (Ω), λ is channel-length
modulation parameter (V−1 ), ID is drain current (A).

Common Source (CS) Amplifier


• Voltage Gain (Av ):
Av = −gm (RD ∥ ro )
where RD is drain resistor (Ω).
• Input Impedance:
Zin ≈ ∞ (ideally, due to high gate impedance)

• Output Impedance:
Zout = RD ∥ ro

• With Source Degeneration (RS ):


−gm (RD ∥ ro )
Av = , Zout = RD ∥ ro
1 + g m RS
where RS is source resistor (Ω).

Common Drain (CD) Amplifier (Source Follower)


• Voltage Gain (Av ):
gm (RS ∥ ro )
Av = ≈ 1 (for large gm RS )
1 + gm (RS ∥ ro )
where RS is source resistor (Ω).
• Input Impedance:
Zin ≈ ∞

• Output Impedance:
1 1
Zout = ∥ RS ∥ ro ≈ (for large ro )
gm gm

• Applications: Buffer amplifier, voltage level shifter.

1
Common Gate (CG) Amplifier
• Voltage Gain (Av ):
Av = gm (RD ∥ ro )

• Input Impedance:
1 1
Zin = ∥ ro ≈ (for large ro )
gm gm

• Output Impedance:
Zout = RD ∥ ro

• Applications: Current buffer, high-frequency amplifiers.

Small-Signal Model for FET


• Model: FET modeled as a voltage-controlled current source (gm vgs ) with output
resistance (ro ).
• Transconductance for MOSFET (saturation region):

W
gm = µn Cox (VGS − VT H )
L
where µn is electron mobility (m2 V−1 s−1 ), Cox is oxide capacitance (F m−2 ), W/L is
width-to-length ratio, VGS is gate-source voltage (V), VT H is threshold voltage (V).
• Transconductance for JFET:
( )
2IDSS VGS
gm = 1−
|VP | VP

where IDSS is saturation current (A), VP is pinch-off voltage (V).

Key Notes
• CS: High gain, phase inversion; CD: Unity gain, high input impedance; CG: Low input
impedance, non-inverting.
• Use SI units for GATE: gm in S, R in Ω, voltages in V.
• Typical values: gm ≈ 1 mS to 10 mS, λ ≈ 0.01 V−1 to 0.05 V−1 .
• For GATE, focus on small-signal analysis and gain calculations.

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