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NNSE618 L8 Transport Phenomenology

The document discusses semiconductor carrier transport and mobility. It begins with a few problems on semiconductor statistics and then covers electron transport phenomena including drift velocity, mobility, and their dependence on temperature. Scattering mechanisms that affect mobility such as acoustic phonons, optical phonons, and impurities are also examined. Effective masses and low field mobilities of common semiconductors like silicon and gallium arsenide are provided.

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Bayanjargal Erdenee
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64 views11 pages

NNSE618 L8 Transport Phenomenology

The document discusses semiconductor carrier transport and mobility. It begins with a few problems on semiconductor statistics and then covers electron transport phenomena including drift velocity, mobility, and their dependence on temperature. Scattering mechanisms that affect mobility such as acoustic phonons, optical phonons, and impurities are also examined. Effective masses and low field mobilities of common semiconductors like silicon and gallium arsenide are provided.

Uploaded by

Bayanjargal Erdenee
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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1

Lecture contents

• Few problems on semiconductor


statistics
• Electron transport: phenomenology
• Mobility vs. temperature
• Drift velocity in high field

NNSE 618 Lecture #8


2

Semiconductor statistics: Problems

1. An intrinsic silicon wafer has 1010 cm-3 holes. When 1018


cm-3 donors are added, what is the new hole concentration?

2. An intrinsic silicon wafer at 470 K has 1014 cm-3 holes.


When 1014 cm-3 acceptors are added, what is the new
electron and hole concentrations?

3. GaAs substrate contains 2x1017 cm-3 EL2 deep donor


centers with Ed = 0.8 eV and 5x1016 cm-3 shallow
acceptors. Find carrier concentration. How the carrier
concentration changes when (1) 2x1016 cm-3 and (2) 1017
cm-3 shallow donors (Ed = 6 meV) are added? What are the
requirements to obtain semi-insulating material? Note:
Consider EL2 center as a simple deep donor. (HW2)

NNSE 618 Lecture #8


3
Semiconductor statistics: Problems
1. An intrinsic Silicon wafer has 1010 cm-3
holes. When 1018 cm-3 donors are added,
what is the new hole concentration?

2. An intrinsic silicon wafer at 470 K has


1014 cm-3 holes. When 1014 cm-3
acceptors are added, what is the new
electron and hole concentrations?

NNSE 618 Lecture #8


4
Electron transport: General considerations

How “free” carriers react on external electric field ?

Motion in real space = thermal motion


+ drift + scattering

Mean free path:   vth m

Motion in wavevector space: inside a


band valley (unless intervalley
scattering is involved)

Current density is proportional to drift


velocity of carriers  A 
J  envd  2 
 cm 
NNSE 618 Lecture #8
5
Electron transport: phenomenological approach

mv 2 3
Kinetic energy per electron in 3D (from
 k BT
kinetic theory of gases) 2 2
12
 3k T  cm
Thermal velocity vth   B  107  vd
 m*  s
Force on a “free” electron includes
electric and “friction” with
momentum relaxation time m :
me*
dvd
dt
e  me* vd
( 
m
e m  cm 2 
electric field) m *  
me  Vs 
e m
  m 
In the steady state drift velocity is
proportional to the field (m –drift vd  *
mobility): me
e 2 m
And current density (s –conductivity) J  env  enm  s s  enm  * n
gives Ohm’s law: me
3D:(Ω  cm)-1 
For semiconductor containing both s  enme  pmh  s 
 2D:(Ω/sq.) -1 

electron and holes:
NNSE 618 Lecture #8
6
Relaxation time and low field mobility
1 1 1 1 1
Mathiessen’s rule for relaxation time:      ...
m  ac  op  ii  ni
In relatively weak electric fields when electron
drift velocity is much smaller than the
thermal velocity, the mean free path is   vth m
given by:
e m
Low field mobility:
m
m*

Effective masses and low field mobility at room temperature:

From Shur, 2003


NNSE 618 Lecture #8
7
Scattering mechanisms

In low electric fields In high electric fields At high concentrations


• ionized impurities • optical phonons • carrier-carrier scattering
• acoustic phonons • intervalley scattering
– Deformation potential
– Piezoelectric

To understand how these mechanisms affect mobility we need to


consider dependence (E)

NNSE 618 Lecture #8


8
Conductivity effective mass
e2 m
Ohm’s Law : J s   *
n
m

For non-degenerate conduction band minimum (G-


point): me*  mG
Indirect conduction band minimum: effective mass J n  J ex  J ey  J ez 
will depend on direction!
 n e 2 m n e 2 m 
For example: Si along [100] direction: 
2 6 m  22 6 m 

 l t 
1 1 1 2 
Conductivity effective mass of Si [100] electrons::
*
 
  
mc 3  ml mt 
Valence band maximum: need to add up contributions
 plh phh  2
 J lh  J hh 
  e  mh

of light and heavy holes: J p
 lh
m m 

1 1  plh phh  mlh12


 m1hh2
Conductivity effective mass of holes      3 2
*
mv p  mlh mhh  mlh  mhh 32

NNSE 618 Lecture #8


9
Low field mobilities of some semiconductor materials

From Singh, 2003

NNSE 618 Lecture #8


10
Temperature dependence of mobility
Relaxation time m depends on energy! Mobility in n-GaAs

Mobility in n-Si

Mobility in p-Si

LO phonon scattering

Intravalley acoustic phonon From Yu and Cordona, 2003,


scattering + (2TA+LO) and Shur, 2003
intervaley phonon scattering
NNSE 618 Lecture #8
11
Mobility in 2D electron gas
2D electron gas in modulation doped GaAs/AlGaAs
heterostructure (eliminated scattering by ionized
impurities by separation of electrons from donors)

Structure:

Band diagram:

From Yu and Cordona, 2003


NNSE 618 Lecture #8

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