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20A04101T Electronic Devices & Circuits

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71 views2 pages

20A04101T Electronic Devices & Circuits

Uploaded by

Siddu Charan Gurram
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Code: 20A04101T R20

B.Tech I Year II Semester (R20) Regular Examinations November 2021


ELECTRONIC DEVICES & CIRCUITS
(Common to EEE & ECE)
Time: 3 hours Max. Marks: 70
PART – A
(Compulsory Question)
*****
1 Answer the following: (10 X 02 = 20 Marks)
(a) Compare drift and diffusion currents of a semiconductor in detail.
(b) Define diffusion capacitance and transition capacitance of a PN junction diode.
(c) What is peak inverse voltage? Write its significance in rectifier circuits.
(d) Describe the basic structure of the BJT.
(e) Define ripple factor.
(f) Write the applications of JFET.
(g) Why are n-channel MOSFET preferred over P-channel MOSFET?
(h) What is emitter follower?
(i) What is h-parameter for a transistor?
(j) What is meant by Q-point?

PART – B
(Answer all five units, 5 X 10 = 50 Marks)
UNIT – I
2 (a) Explain in detail about Hall effect.
(b) In a P-type semiconductor the resistivity of the bar is 220 X 103 Ω, width is 2 mm, magnetic flux is
0.1 Wb/m2 , I = 5µ amps, VH = 28 m volts. Find the hole mobility of a semiconductor bar.
OR
3 (a) Derive an expression for current density of an intrinsic semiconductor.
(b) Show that the Fermi energy level lies in the centre of forbidden energy band for an intrinsic
semiconductor? Derive.
UNIT – II
4 (a) Derive the expression for a ripple factor in a full-wave rectifier with resistive load in detail.
(b) In half-wave rectifier an ac voltage of peak value 24 V is connected in series with silicon diode and
load resistance of 480Ω. If the forward resistance of the diode is 20Ω, find average load current and
rms value of load current.
OR
5 (a) A Germanium transistor used in a complementary symmetry amplifier has ICBO = 10µA at 27oC and
hFE = 50. (i) Find Ic when Ib = 0.25mA. (ii) Assuming hFE does not increase with temperature. Find the
value of new collector current, if the transistor temperature rises to 50oC.
(b) Draw the circuit diagram of an NPN junction transistor CE configuration and describe the static input
and output characteristics. Also, define active, saturation and cutoff regions and saturation
resistance of a CE transistor.

Contd. in page 2

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Code: 20A04101T R20
UNIT – III
6 (a) Explain any two bias compensation techniques.
(b) What is biasing? Explain the need of it. List out different types of biasing methods.
OR
7 (a) Given IE = 2.5mA, hfe = 140, hoe = 20µs and hob = 0.5µs. Determine the common-emitter hybrid
equivalent circuit.
(b) Draw the circuit diagram of CB amplifier and explain its operation in detail.
UNIT – IV
8 (a) Draw the common emitter amplifier with emitter resistor and explain its operation.
(b) List out the few comparison of transistor amplifier configurations in detail.
OR
9 (a) Draw the fixed bias circuit and explain it. Write the draw backs of it.
(b) For the NPN transistor connected in CE configuration with VCC = 9 V, VBB = 4 V, IC = 5 mA, VCE = 5 V,
β = 50 and VBE = 0.7 V. Find β and RB.
UNIT – V
10 Derive the general expressions for current gain, input impedance, voltage gain and output
impedance of transistor amplifier using h-parameters.
OR
11 (a) Draw the hybrid parameter equivalent circuit for an NPN common emitter transistor and explain.
(b) Give the advantages of h-parameter analysis.

*****

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