Electronic Circuits

Chapter 4: Frequency Response

1
 Outline
Introduction

Low frequency and high frequency models

Low frequency response of CS and CE Amplifier

High frequency model of MOSFET and BJT

Miller’s Theorem and Exact Analysis

HF Response of CG, Source and Emitter Followers

2
 Introduction

At lower frequencies, the magnitude of the amplifier gain falls off. This occurs
because the coupling and bypass capacitors no longer have low impedances.
The gain of the amplifier falls off at the high-frequency end. This is due to
internal capacitive effects in the BJT and in the MOSFET.

3
 Introduction: Low-pass Circuit

In frequency domain:

𝑉" 1 𝑉"
𝑉! = ) =
1 𝑗𝜔𝐶 1 + 𝑗𝜔𝑅𝐶
𝑅 + 𝑗𝜔𝐶 𝑓 𝑉#
𝑓 ≪ 𝑓" : ≪ 1 → ≃ 1 = 0(𝑑𝐵)
1 𝑓" 𝑉$
𝑉! 𝑗𝜔𝐶 1
→ 𝐴# = = = 𝑓 𝑉# 1 𝑉#
𝑉" 1 𝑓 = 𝑓" : =1→ = →
+ 𝑅 1 + 𝑗𝜔𝑅𝐶 𝑓" 𝑉$ 1 + 𝑗 𝑉$
𝑗𝜔𝐶 1 1
1 = = = −3 (𝑑𝐵)
= 1+𝑗 2
𝑓
1 + 𝑗 ,𝒇
𝟎 𝑓 𝑉# 1 𝑓"
𝑓 ≫ 𝑓" : ≫1→ ≃ ≃ −𝑗
𝑓" 𝑉$ 𝑓 𝑓
𝟏 𝟏 𝑗
𝒇𝟎 = = 𝝉 = 𝟐𝝅𝑹𝑪 𝑓"
𝟐𝝅𝑹𝑪 𝝉 = 20 log%" 𝑓" − 𝟐𝟎 𝒍𝒐𝒈𝟏𝟎 𝒇 (𝑑𝐵)
4
 Introduction: High-pass Circuit

𝑉" 𝑅 𝑉"
In frequency domain: 𝑉! = =
1 1
𝑅+ 1+
𝑗𝜔𝐶 𝑗𝜔𝑅𝐶
𝑓
𝑉! 1 1 𝑗 ,𝑓
!
→ 𝐴# = = = =
𝑉" 1 − 𝑗 1 𝑓 𝑓
1 − 𝑗 !,𝑓 𝑗 ,𝑓 + 1
𝜔𝑅𝐶 !
𝟏 𝟏
𝒇𝟎 = = 𝝉 = 𝟐𝝅𝑹𝑪
𝟐𝝅𝑹𝑪 𝝉
5
Introduction: Octave vs Decade
If f2 = 2f1, then f2 is one octave above f1.

If f2 = 10f1, then f2 is one decade above f1

𝑓% 𝑓%
# 𝑜𝑓 𝑜𝑐𝑡𝑎𝑣𝑒 = 𝑙𝑜𝑔% = 3.32𝑙𝑜𝑔&'
𝑓& 𝑓&
𝑓%
# 𝑜𝑓 𝑑𝑒𝑐𝑎𝑑𝑒 = 𝑙𝑜𝑔&'
𝑓&

Example:
2 GHz is one octave above 1 GHz
10 GHz is one decade above 1 GHz

6
 Introduction: 3dB definition
𝟏
3dB points are points at which the magnitude is that at mid-band
𝟐
frequency.

Power is halved. Voltage is scaled as:

𝑉! 𝑉!
=
1+𝑗 2

From which:
𝐴*+ = 20𝑙𝑜𝑔&' 2 = 3𝑑𝐵

7
 Introduction: Gain
Amplifier has intrinsic gain: 𝑨𝟎

𝟏
Low-pass characteristics:
𝟏,𝒋𝒇.𝒇
𝒉𝒊

𝒋𝒇.𝒇
𝒍𝒐
High-pass characteristics: 𝒇
𝟏,𝒋 .𝒇
𝒍𝒐

𝟏 𝒋𝒇.𝒇
𝒍𝒐
Overall gain: 𝑨 𝒇 = 𝑨𝟎 𝒇 𝒇
𝟏,𝒋 .𝒇 𝟏,𝒋 .𝒇
𝒉𝒊 𝒍𝒐

At very high frequency, the gain becomes:

𝟐
𝑮 = −𝟐𝟎𝒍𝒐𝒈𝟏𝟎 𝟏 + 𝝎C𝝎𝟎 ≈ −𝟐𝟎𝒍𝒐𝒈𝟏𝟎 𝝎C𝝎𝟎

Slope of curve is -20db/decade

8
 Model for general amplifying element
CC1 and CC2 are coupling capacitors (large): 𝜇𝐹. 𝑪𝑪𝟏 ∼ 𝒖𝑭 1 1
𝑍2 = =
𝑗𝜔𝐶 𝑗2𝜋𝑓𝐶
Cin and Cout are parasitic capacitors (small): 𝑝𝐹. 𝑪𝒊𝒏 ∼ 𝒑𝑭

Mid-band frequency: - Coupling capacitors are short circuits

- Parasitic capacitors are open circuits

𝒗𝒐𝒖𝒕
𝑨𝑴𝑩 =
𝒗𝒊𝒏
𝑹𝒊𝒏 𝑹𝑳
= 𝑨
𝑹𝒊𝒏 + 𝑹𝒈 𝑹𝑳 + 𝑹𝒐𝒖𝒕
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 Low frequency model
Low frequency model: - Coupling capacitors are present.
- Parasitic capacitors are open circuits.

𝑅$5 𝑗𝜔𝑅$5 𝐶7%

𝑣34 = 𝒗𝒊𝒏 = 𝒗𝒊𝒏
1 1 + 𝑗𝜔𝐶7% 𝑅$5 + 𝑅6
𝑅$5 + 𝑅6 +
𝑗𝜔𝐶7%
𝑅$5 𝑗𝜔𝐶7% 𝑅$5 + 𝑅6
= 𝒗𝒊𝒏
𝑅$5 + 𝑅6 1 + 𝑗𝜔𝐶7% 𝑅$5 + 𝑅6
10
 Low frequency model

1 1
Define: 𝑓8% = 𝑓89 =
2𝜋 𝑅$5 + 𝑅6 𝐶7% 2𝜋 𝑅#:; + 𝑅< 𝐶79

𝑓
𝑅$5 𝑗𝜔𝐶7% 𝑅$5 + 𝑅6 𝑅$5 𝑗 C𝑓
8%
𝑣34 = 𝒗𝒊𝒏 = 𝒗𝒊𝒏
𝑅$5 + 𝑅6 1 + 𝑗𝜔𝐶7% 𝑅$5 + 𝑅6 𝑅$5 + 𝑅6 1 + 𝑗 𝑓C
𝑓8%
𝑓
𝑅< 𝑗𝜔𝐶79 𝑅< + 𝑅#:; 𝑅< 𝑗 C𝑓
89
𝑣#:; = 𝑨𝒗𝒂𝒃 = 𝑨𝒗𝒂𝒃
𝑅< + 𝑅#:; 1 + 𝑗𝜔𝐶79 𝑅< + 𝑜𝑢𝑡 𝑅< + 𝑅#:; 1 + 𝑗 𝑓C
𝑓89
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 Low frequency model

𝑓 𝑓
𝑣#:; 𝑅$5 𝑅< 𝑗 C𝑓8% 𝑗 C𝑓
89
Overall gain: =𝐴
𝑣$5 𝑅$5 + 𝑅6 𝑅< + 𝑅#:; 1 + 𝑗 𝑓C 1 + 𝑗 𝑓C
𝑓8% 𝑓89
𝑓 𝑓
𝑣#:; 𝑗 C𝑓 𝑗 C𝑓
8% 89
= 𝑨𝑴𝑩
𝑣$5 𝑓 𝑓
1 + 𝑗 C𝑓 1 + 𝑗 C𝑓
8% 89

12
 High frequency model
Low frequency model: - Coupling capacitors are short.
- Parasitic capacitors are present.

𝑹𝒊𝒏
𝑽𝒕𝒉𝟏 = 𝒗𝒊𝒏
𝑹𝒊𝒏 + 𝑹𝒈
Equivalent Thevenin Circuit
𝑹𝒕𝒉𝟏 = 𝑹𝒊𝒏 ∥ 𝑹𝒈

13
 High frequency model

𝑅$5 1
𝑣34 = 𝒗𝒊𝒏
𝑅$5 + 𝑅6 1 + 𝑗𝜔 𝑅$5 ∥ 𝑅6 𝐶$5

𝑅$5 1 1
= 𝒗𝒊𝒏 where: 𝑓@% =
𝑅$5 + 𝑅6 1 + 𝑗 𝑓C 2𝜋 𝑅$5 ∥ 𝑅6 𝐶$5
𝑓@%
𝑅< 1 𝑅< 1
𝑣#:; = 𝑨𝒗𝒂𝒃 = 𝑨𝒗𝒂𝒃
𝑅< + 𝑅#:; 1 + 𝑗𝜔𝐶#:; 𝑅< ∥ 𝑅#:; 𝑅< + 𝑅#:; 1 + 𝑗 𝑓C
𝑓@9
1
where: 𝑓@9 =
2𝜋 𝑅#:; ∥ 𝑅< 𝐶#:;
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 High frequency model

𝑣#:; 𝑅$5 𝑅< 1 1

Overall gain: = 𝑨𝒗𝒂𝒃
𝑣$5 𝑅$5 + 𝑅6 𝑅< + 𝑅#:; 1 + 𝑗 𝑓C 1 + 𝑗 𝑓C
𝑓@% 𝑓@9

𝑣#:; 1 1
= 𝑨𝑴𝑩
𝑣$5 𝑓 𝑓
1 + 𝑗 C𝑓 1 + 𝑗 C𝑓
@% @9

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 High frequency model
Example 1: Given 𝑅#:; = 3𝑘Ω, 𝑅6 = 200Ω, 𝑅$5 = 12𝑘Ω , 𝑅< = 10𝑘Ω, 𝐶7% =
5𝜇𝐹, 𝐶79 = 1𝜇𝐹, 𝐶$5 = 200𝑝𝐹, 𝐶#:; = 40𝑝𝐹. Compute 𝑓8% , 𝑓89 , 𝑓@% , 𝑓@9 .

1
𝑓8% = = 2.61 𝐻𝑧
2𝜋×12200×5×10AB
1
𝑓89 = = 12.2 𝐻𝑧
2𝜋×13000×1×10AB

1
𝑓@% = = 4.05 𝑀𝐻𝑧
2𝜋× 12000 ∥ 200 ×2×10A%"
1
𝑓@9 = = 1.72 𝑀𝐻𝑧
2𝜋× 10000 ∥ 3000 ×4×10A%%

16
LF Response of CE Amplifier

B C
Vo
Vsig 𝑔! 𝑉"#

17
 LF Response of CE Amplifier
Considering the Effect of Each of the Three Capacitors Separately
Case 1: Consider 𝑪𝑪𝟏 , short circuit 𝑪𝑬 and 𝑪𝑪𝟐 𝑉# = −𝒈𝒎 𝑽𝝅 𝑹𝑪 ∥ 𝑹𝑳
𝑅F ∥ 𝑟D
𝑉D = 𝑽𝒔𝒊𝒈
1
𝑅F ∥ 𝑟D + 𝑅G$6 +
𝑗𝜔𝐶7%
𝑉# 𝑅F ∥ 𝑟D
=− 𝒈 𝑹 ∥ 𝑹𝑳
𝑉G$6 𝑅F ∥ 𝑟D + 𝑅G$6 𝒎 𝑪
1
×
1
B C 1+
𝑗𝜔𝐶7% 𝑅F ∥ 𝑟D + 𝑅G$6
𝑉$ 𝑔! 𝑉"# 𝑉#
𝑽𝒔𝒊𝒈

1 𝑅F ∥ 𝑟D
𝑓J% = 𝑨𝑴𝑩 = − 𝒈𝒎 𝑹𝑪 ∥ 𝑹𝑳
2𝜋𝐶7% 𝑅F ∥ 𝑟D + 𝑅G$6 𝑅F ∥ 𝑟D + 𝑅G$6
18
 LF Response of CE Amplifier
Considering the Effect of Each of the Three Capacitors Separately

Case 2: Consider 𝑪𝑪𝟐 , short circuit 𝑪𝑬 and 𝑪𝑪𝟏 𝒔 = 𝒋𝝎

𝑅F ∥ 𝑟D
𝑉D = 𝑽𝒔𝒊𝒈
𝑅F ∥ 𝑟D + 𝑅G$6

𝑹𝑪
𝑉# = −𝒈𝒎 𝑽𝝅 𝑹𝑳
𝟏
𝑹𝑪 + + 𝑹𝑳
𝒔𝑪𝟐
𝑉# 𝑅F ∥ 𝑟D
=− 𝒈 𝑹 ∥ 𝑹𝑳
𝑉G$6 𝑅F ∥ 𝑟D + 𝑅G$6 𝒎 𝑪

B C 𝑠
×
𝑉$ 𝑔! 𝑉"# 1
𝑉# 𝑠+
𝑽𝒔𝒊𝒈
𝐶79 𝑅2 + 𝑅<

E 1
𝑓J9 =
2𝜋𝐶79 𝑅2 + 𝑅<
19
 LF Response of CE Amplifier
Considering the Effect of Each of the Three Capacitors Separately
Case 3: Consider 𝑪𝑬 , short circuit 𝑪𝑪𝟏 and 𝑪𝑪𝟐
𝑉# = −𝜷𝑰𝒃 𝑹𝑪 ∥ 𝑹𝑳 𝒔 = 𝒋𝝎
𝑅F 1
𝐼4 = 𝑽𝒔𝒊𝒈
𝑅F + 𝑅G$6 𝑅 ∥ 𝑅 1
F G$6 + 𝛽 + 1 𝑟K +
𝒔𝐶L
𝑉# 𝑅F 𝜷 𝑹𝑪 ∥ 𝑹𝑳
=−
𝑉G$6 𝑅F + 𝑅G$6 𝑅F ∥ 𝑅G$6 + 𝛽 + 1 𝑟K
𝑠
×
1
𝑠+ 𝑅 ∥ 𝑅G$6
𝐶L 𝑟K + F n𝛽 + 1

1
𝑓JM =
𝑅 ∥ 𝑅G$6
2𝜋𝐶L 𝑟K + F n𝛽 + 1

20
LF Response of CE Amplifier
Case 1 Case 2

Case 3

21
 LF Response of CE Amplifier
𝑉# 𝑠 𝑠 𝑠
= −𝐴N
𝑉G$6 𝑠 + 𝜔J% 𝑠 + 𝜔J9 𝑠 + 𝜔JM

If fP1, fP2 and fP3 are widely separated: 𝑓< = max(𝑓J% , 𝑓J9 , 𝑓JM )
1 1 1 1
If fP1, fP2 and fP3 are close together: 𝑓< ≈ + + = 𝑓J% + 𝑓J9 + 𝑓JM
2𝜋 𝑅7% 𝐶7% 𝑅L 𝐶L 𝑅7M 𝐶7M

Example 2: Select appropriate values for 𝐶7% , 𝐶79 and 𝐶L for the CE amplifier which has
𝑅F = 100𝑘Ω, 𝑅2 = 8𝑘Ω, 𝑅< = 5𝑘Ω, 𝑅G$6 = 5𝑘Ω, 𝛽 = 100, 𝑔O = 4𝑚𝐴/𝑉 and 𝑟D =
2.5𝑘Ω. It is required 𝑓< = 100𝐻𝑧.

22
LF Response of CS Amplifier

G D
𝑣#

𝑣*+) S 𝑔( 𝑣)*

23
 LF Response of CS Amplifier
Case 1: Consider 𝑪𝑪𝟏 , short circuit 𝑪𝑬 and 𝑪𝑪𝟐 𝒔 = 𝒋𝝎

𝑅P
𝑉6 = 𝑽𝒔𝒊𝒈
1
𝑅P + 𝑅G$6 + 𝒔𝐶
7%

𝑅P 𝑠
𝑉6 = 𝑽𝒔𝒊𝒈
𝑅P + 𝑅G$6 𝑠 + 1
𝐶7% 𝑅P + 𝑅G$6

1
𝑓J% =
2𝜋𝐶7% 𝑅P + 𝑅G$6

24
 LF Response of CS Amplifier
Case 2: Consider 𝑪𝑪𝟐 , short circuit 𝑪𝑬 and 𝑪𝑪𝟏 𝒔 = 𝒋𝝎

𝑅R
𝐼< = −𝐼Q
1
𝑅R + 𝑅< +
𝒔𝐶79

𝑅R 𝑅< 𝑠
𝑉# = −𝐼Q
𝑅R + 𝑅< 𝑠 + 1
𝐶79 𝑅R + 𝑅<

1
𝑓J9 =
2𝜋𝐶79 𝑅R + 𝑅<

25
 LF Response of CS Amplifier
Case 3: Consider 𝑪𝑬 , short circuit 𝑪𝑪𝟏 and 𝑪𝑪𝟐 𝒔 = 𝒋𝝎

𝑉6 𝑠
𝐼Q = = 𝑔O 𝑉6 𝑔O
1 1 𝑠 +
+ 𝐶G
𝑔O 𝑠𝐶G

𝑔O
𝑓J9 =
2𝜋𝐶G

26
 LF Response of CS Amplifier
1
𝑓J% =
2𝜋𝐶7% 𝑅P + 𝑅G$6
𝑔O
𝑓J9 =
2𝜋𝐶G
1
𝑓JM =
2𝜋𝐶79 𝑅R + 𝑅<

𝑉# 𝑅P 𝑠 𝑠 𝑠
=− 𝒈 𝑅 ∥ 𝑅<
𝑉G$6 𝑅P + 𝑅G$6 𝒎 R 𝑠 + 𝜛J% 𝑠 + 𝜛J9 𝑠 + 𝜛JM
𝑉# 𝑠 𝑠 𝑠
= 𝑨𝑴𝑩
𝑉G$6 𝑠 + 𝜛J% 𝑠 + 𝜛J9 𝑠 + 𝜛JM

𝑅P
where: 𝑨𝑴𝑩 = − 𝒈 𝑅 ∥ 𝑅<
𝑅P + 𝑅G$6 𝒎 R
27
 Gate Capacitive Effect
The gate capacitive effect can be modeled by the capacitances Cgs, Cgd.

&
v Triode region: 𝐶/0 = 𝐶/* = 𝑊𝐿𝐶!1
%
%
v Saturation region: 𝐶/0 = 𝑊𝐿𝐶!1 𝐶/* = 0
2

v Cutoff region: 𝐶/0 = 0 𝐶/* = 0

Equivalent circuit for the case in which Equivalent circuit with 𝐶Q4 neglected (to
the source is connected to the substrate simplify analysis)
28
HF Response of CS Amplifier

CS Amplifier HF Equivalent circuit

Simplified HF Equivalent circuit

29
 HF Response of CS Amplifier

𝑉& ≃ −𝑔' 𝑅() 𝑉*+

Simplified HF Equivalent circuit

S T%
Midband gain: 𝐴NF = S ! = − T 𝑔O 𝑅<V
"#$ % UT"#$

Load current: 𝐼34 = 𝑔5 𝑉/0 − 𝐼/*

At frequencies in the vicinity of 𝑓𝐻 : 𝐼34 ≈ 𝑔5 𝑉/0 → 𝑉! ≃ −𝑔5 𝑅34 𝑉/0

The current 𝐼𝑔𝑑 can now be found as: 𝐼6Q = 𝑠𝐶6Q 𝑉6G − 𝑉# = 𝑠𝐶6Q 𝑉6G + 𝑔O 𝑅<V 𝑉6G
= 𝑠𝐶6Q 1 + 𝑔O 𝑅<V 𝑉6G
30
 HF Response of CS Amplifier
v Therefore, the left hand side of XX’ could be replaced by 𝐶𝑒𝑞 , where

𝑠𝐶67 𝑉/0 = 𝑠𝐶/* 1 + 𝑔5 𝑅34 𝑉/0 or 𝑪𝒆𝒒 = 𝑪𝒈𝒅 𝟏 + 𝒈𝒎𝑹4𝑳

Miller effect

𝐶"> = 𝐶/0 + 𝐶67 = 𝐶/0 + 𝐶/* 1 + 𝑔5 𝑅34

4
𝑅0"/ = 𝑅0"/ ∥ 𝑅?
31
 HF Response of CS Amplifier
𝑉/0 can be written as:
𝑅? 1 𝑅? 1
𝑉/0 = 𝑉 = 𝑉
𝑅? + 𝑅0"/ 0"/ 𝑗𝑓 𝑅? + 𝑅0"/ 0"/ 1 + 𝑠
1+ 𝜔'
𝑓'
𝟏
where 𝑓' is the 3dB frequency: 𝒇𝟎 =
𝟐𝝅𝑪𝒊𝒏 𝑹4𝒔𝒊𝒈
4
𝐶"> = 𝐶/0 + 𝐶67 = 𝐶/0 + 𝐶/* 1 + 𝑔5 𝑅34 𝑅0"/ = 𝑅0"/ ∥ 𝑅?

32
 HF Response of CS Amplifier
Example 3: Find the mid-band gain 𝐴NF and the upper 3-dB frequency 𝑓\ of a CS
amplifier fed with a signal source having an internal resistance 𝑅G$6 = 100𝑘Ω. The
amplifier has 𝑅P = 4.7𝑀Ω, 𝑅R = 𝑅< = 15𝑘Ω, 𝑔O = 1𝑚𝐴/𝑉, 𝑟# = 150𝑘Ω, 𝐶6G =
1𝑝𝐹, 𝐶6Q = 0.4𝑝𝐹.

33
 BJT High Frequency model

Emitter-base capacitance 𝐶C is in the range of a few picofarads.

Collector-base capacitance 𝐶D is in the range of a fraction of pF to a few pF.

𝑟1 is added to model the resistance of the silicon material of the base

region between the base terminal B and a fictitious internal, or intrinsic,
base terminal that is right under the emitter region.

35
HF Response of CE Amplifier

36
 HF Response of CE Amplifier

𝑉! 𝑅+ 𝑟C
Midband gain: 𝐴E+ = =− 𝑔5 𝑅34
𝑉0"/ 𝑅+ + 𝑅0"/ 𝑟C + 𝑟1 + 𝑅+ ∥ 𝑅0"/
𝑉! 1
= 𝐴E+
And: 𝑉0"/ 𝑗𝑓
1+
𝑓'
37
 HF Response of CE Amplifier

𝟏
the 3dB frequency: 𝒇𝟎 =
𝟐𝝅𝑪𝒊𝒏 𝑹4𝒔𝒊𝒈 Miller effect

𝐶"> = 𝐶C + 𝐶67 = 𝐶C + 𝐶D 1 + 𝑔5 𝑅34 4

𝑅0"/ = 𝑟C ∥ 𝑟1 + 𝑅+ ∥ 𝑅0"/

38
 HF Response of CE Amplifier
Example 4: It is required to find the mid-band gain and the upper 3-dB
frequency of the common-emitter amplifier. Given: 𝑉FF = 𝑉GG = 10𝑉, 𝐼 =
1𝑚𝐴, 𝑅+ = 100𝑘Ω, 𝑅0"/ = 5𝑘Ω, 𝑅F = 𝑅3 = 5𝑘Ω, 𝛽' = 100, 𝑉H = 100𝑉,
𝐶D = 1𝑝𝐹, 𝐶C = 7𝑝𝐹 and 𝑟1 = 50Ω.

39
 Miller’s Theorem
In the analysis of HF response of CE and CS amplifiers, a technique for
replacing the bridging capacitance by an equivalent input capacitance.

This technique is based on a general theorem known as Miller’s

theorem.

Assume that 𝑽𝟐 = 𝑲𝑽𝟏 . Miller’s theorem states that impedance Z can be

replaced by two impedances:
𝒁 𝒁
𝒁𝟏 = 𝒁𝟐 =
𝟏−𝑲 𝟏 − 𝟏,𝑲

40
 Miller’s Theorem
Example 5: An ideal voltage amplifier having a gain of −100𝑉/𝑉 with an
impedance Z connected between its output and input terminals. Find the
Miller equivalent circuit when Z is
a. A 1𝑀Ω resistance.
b. a 1pF capacitance. In each case, use the equivalent circuit to
determine I,,I-./.

41
 Analyzing using Miller’s theorem
The value of and can be determined
using Miller’s theorem:
𝐶& = 𝐶/* 1 − 𝐾

𝐶% = 𝐶/* 1 − 1,𝐾
Generalized HF equivalent
𝑉
where: 𝐾 = !]𝑉 = −𝑔5 𝑅34 circuit for the CS amplifier
/0

HF equivalent circuit model of the CS amplifier

after the application of Miller’s theorem
42
 Analyzing using Miller’s theorem
𝑪𝟏 and 𝑪𝟐 will be used to determine the overall transfer function.

𝐶& = 𝐶/* 1 − 𝐾 = 𝐶/* 1 + 𝑔5 𝑅34 𝐶% = 𝐶/* 1 − 1,𝐾 = 𝐶/* 1 + 1,

𝑔5 𝑅34
1
At the input side: 𝑓J" = 4
2𝜋 𝐶/0 + 𝐶& 𝑅0"/
1
At the output side: 𝑓J! =
2𝜋 𝐶/0 + 𝐶% 𝑅34
𝑉! −𝑔5 𝑅34
The approximated transfer function: 4 = 𝑠 𝑠
𝑉0"/ 1+ 1+
𝜔J" 𝜔J!

1
𝑓K =
1 1
% + %
𝑓J" 𝑓J!
HF equivalent circuit model of the CS amplifier
after the application of Miller’s theorem
43
 The HF Gain Function
The amplifier gain can be expressed in the general form: 𝑨 𝒔 = 𝑨𝑴𝑭𝑯(𝒔)
1 + 𝑠⁄𝜔N& 1 + 𝑠⁄𝜔N% … 1 + 𝑠⁄𝜔N>
where: 𝑭𝑯 𝒔 =
1 + 𝑠⁄𝜔O& 1 + 𝑠⁄𝜔O% … 1 + 𝑠⁄𝜔O>

The designer needs to estimate the value of the upper 3-dB frequency 𝑓K
→ particularly interested in the part of the HF band close to the midband.

1
If the dominant pole exists: 𝑭𝑯 𝒔 ≈
1 + 𝑠⁄𝜔O&

If the dominant pole does not exist: For simplicity, consider the following case:

1 + 𝑠⁄𝜔N& 1 + 𝑠⁄𝜔N%
𝑭𝑯 𝒔 =
1 + 𝑠⁄𝜔O& 1 + 𝑠⁄𝜔O%

44
 The HF Gain Function
The magnitude of 𝑓K can be written as:
1 + 𝜔 % ⁄𝜔% 1 + 𝜔 % ⁄𝜔%
N& N%
𝐹K (𝑗𝜔) % = % %
1 + 𝜔 % ⁄𝜔O& 1 + 𝜔 % ⁄𝜔O&
% &
By definition 𝜔 = 𝜔K . 𝐹K = , thus:
%
% %
1 1 + 𝜔% ⁄𝜔N& 1 + 𝜔% ⁄𝜔N%
= % %
2 1 + 𝜔 % ⁄𝜔O& 1 + 𝜔 % ⁄𝜔O&

Q
1 1 2 2
Since 𝜔K < 𝜔O , 𝜔P , we can neglect 𝜔K : 𝜔K ≈ 1] % + 𝜔% − 𝜔% − 𝜔%
𝜔O& O% P& P%

This relationship can be extended to any number of poles and zeros:

1 1 2 2
𝜔K ≈ 1] % + 𝜔% + ⋯ − 𝜔% + 𝜔% + ⋯
𝜔O& O% P& P%
45
 The HF Gain Function
Example 6: The high-frequency response of an amplifier is characterized
by the transfer function:
1 − 𝑠⁄10R
𝐹K 𝑠 =
1 + 𝑠⁄10Q 1 + 𝑠⁄4×10R
Determine the 3-dB frequency approximately and exactly.

46
 Analyzing using Exact Method
Node equation at the drain provides:
𝑉!
𝑠𝐶/* 𝑉/0 − 𝑉! = 𝑔5 𝑉/0 + 4 + 𝑠𝐶3 𝑉!
𝑅3
−𝑉! 1 + 𝑠 𝐶3 + 𝐶/* 𝑅34
→ 𝑉/0 =
𝑔5 𝑅34 1 − 𝑠 𝐶/* ⁄𝑔5 Generalized HF equivalent
circuit for the CS amplifier

Node equation at G provides:

𝐼" = 𝑠𝐶/0 𝑉/0 + 𝑠𝐶/* 𝑉/0 − 𝑉!

Then:
4 4 4
𝑉0"/ = 𝑉/0 1 + 𝑠 𝐶/0 + 𝐶/* 𝑅0"/ − 𝑠𝐶/0 𝑅0"/ 𝑉!

47
 Analyzing using Exact Method
𝑉! −𝑔5 𝑅34 1 − 𝑠 𝐶/* ⁄𝑔5
The amplifier gain is: 4 =
𝑉0"/ 1 + 𝑠𝑨 + 𝑠 % 𝑩
4
where: 𝑨 = 𝐶/0 + 𝐶/* 1 + 𝑔5 𝑅34 𝑅0"/ + 𝐶3 + 𝐶/* 𝑅34
4
𝑩= 𝐶3 + 𝐶/* 𝐶/0 + 𝐶3 𝐶/* 𝑅0"/ 𝑅34

The transfer function has a second-order denominator, and thus the amplifier
has two poles. Also the numerator is of the first order.

48
 Analyzing using Exact Method
𝑉! −𝑔5 𝑅34 1 − 𝑠 𝐶/* ⁄𝑔5
The amplifier gain is: 4 =
𝑉0"/ 1 + 𝑠𝑨 + 𝑠 % 𝑩
Zeros: 𝜔O& = ∞ 𝜔O% = 𝑔5 ⁄𝐶/*

Poles: the denominator polynomial 𝐷(𝑠) can be expressed as:

𝑠 𝑠 1 1 𝑠%
𝐷 𝑠 = 1+ 1+ =1+𝑠 + +
𝜔O& 𝜔O% 𝜔O& 𝜔O% 𝜔O& 𝜔O%
1 %
1
≈1+𝑠 +𝑠
𝜔O& 𝜔O& 𝜔O%
1 1
This gives: 𝜔O& ≈ =
𝐴 𝐶/0 + 𝐶/* 1 + 𝑔5 𝑅34 𝑅0"/
4 + 𝐶 +𝐶
3
4
/* 𝑅3
4
1 𝐶/0 + 𝐶/* 1 + 𝑔5 𝑅34 𝑅0"/ + 𝐶3 + 𝐶/* 𝑅34
𝜔O% = = 4 𝑅4
𝐵 𝐶3 + 𝐶/* 𝐶/0 + 𝐶3 𝐶/* 𝑅0"/ 3
49
 Analyzing using Exact Method

Example 7: Consider an IC CS amplifier for which 𝑔5 = 1.25𝑚𝐴/𝑉 % ,

4
𝐶/0 = 20𝑓𝐹 , 𝐶/* = 5𝑓𝐹 , 𝐶3 = 25𝑓𝐹 , 𝑅0"/ = 10𝑘Ω , 𝑅34 = 10𝑘Ω .
Determine 𝑓K using
a. the Miller approximation.
b. Miller’s theorem.
c. Determine the frequencies of the two poles and the zero and hence
the 3-dB frequency.

50
 HF Response of the CG Amplifiers
v CS and CE amplifier:
• Substantial gain at mid-band frequencies.
• Low 𝑓K due to the large input capacitance 𝐶"> (Miller effect).

→ In order to obtain wide bandwidth: need circuit configurations that do

not suffer from the Miller effect: Common Gate (CG) circuit.

51
HF Response of the CG Amplifiers
If 𝑟' is neglected: the circuit is greatly simplified.

1 1
Two poles: 𝑓O& = 𝑓O% =
1 2𝜋𝑅3 𝐶/0 + 𝐶3
2𝜋𝐶/0 𝑅0"/ ∥
𝑔5

If 𝑟' is not neglected: reading Ref. page 746-750.

52
 HF Response of the Source and
Emitter Amplifiers
Major advantage of the source follower: its excellent high-frequency response.
𝑅3 ∥ 𝑟! 1
Midband gain: 𝐴E = 𝑅! = ∥𝑟
𝑅3 ∥ 𝑟! +
1 𝑔5 !
𝑔5

Equivalent circuit of Source Simplified equivalent circuit of

Follower Amplifier Source Follower Amplifier
53
 Exercises
Exercise 4: The following figure shows the high-frequency equivalent
circuit of a CS amplifier with a resistance Rs connected in the source lead.
The purpose of this problem is to show that the value of Rs can be used to
control the gain and bandwidth of the amplifier, specifically to allow the
designer to trade gain for increased bandwidth.
a. Derive an expression for the low-frequency voltage gain.
b. Derive Rgs and Rgd.
c. Let 𝑅0"/ = 100𝑘Ω, 𝑔5 = 4𝑚𝐴/𝑉, 𝑅34 = 5𝑘Ω, 𝐶/0 = 𝐶/* = 1𝑝𝐹.
Determine the low frequency gain and 3dB frequency 𝑓K for 3 cases: 𝑅0 =
0, 𝑅0 = 100Ω and, 𝑅0 = 250Ω. Comment.

𝑅G = 0: 𝐴] = −20, 𝑓\ = 72𝑘𝐻𝑧

𝑅G = 100: 𝐴] = −14.3, 𝑓\ = 99𝑘𝐻𝑧

𝑅G = 250: 𝐴] = −10, 𝑓\ = 137𝑘𝐻𝑧

54
 A1 - BJT High Frequency model

v The transistor data sheets do not usually specify the value of 𝐶C .

v Rather, the behavior of β (or hfe) versus frequency is normally given.

v Need to derive an expression for hfe to determine 𝐶C and 𝐶D

55
 A1 - BJT High Frequency model

The short-circuit collector current 𝐼S can be written as: 𝐼S = 𝑔5 − 𝑠𝐶D 𝑉C

𝐼T
And 𝑉C = 𝐼T 𝑟C ∥ 𝐶C ∥ 𝐶D =
1⁄𝑟C + 𝑠𝐶C + 𝑠𝐶D
𝐼S 𝑔5 − 𝑠𝐶D 𝑔5 𝑟C
Then ℎU6 ≡ = ≃
⁄
𝐼T 1 𝑟C + 𝑠𝐶C + 𝑠𝐶D 1 + 𝑠 𝐶C + 𝐶D 𝑟C

56
Q&A

57