COURSE…………………………………………………………………………INDEX NO…………………………………………………..

KWAME NKRUMAH UNIVERSITY OF SECIENCE AND TECHNOLOGY

COLLEGE ENGINEERING
BASIC ELECTRONIC (Mid-Semester Examination)
APRIL, 2011. 1Hour
Answer all the questions OPTION A

The emitter current (IE) in a PNP transistor is 8.4mA. Only 0.7% of the minority carriers
(holes) injected into the base recombine. The collector reverse leakage current (ICBO) is 0.1μA.
Find

Q1. the base current IB.

(a) 5.88x10-5A
(b) 5.08x10-5A
(c) 5.48x10-5A
(d) 6.00x10-5A
(e) None of the above.

Q2. the collector current IC.

(a) 8.3412mA
(b) 8.9125μA
(c) 8.9125mA
(d) 8.3412μA
(e) None of the above.

Q3. the exact value of DC alpha (α)

(a) 0.99118
(b) 0.99298
(c) 0.99448
(d) 0.99338
(e) None of the above.

Q4. the approximate value of DC alpha (α), neglecting ICBO

(a) 0.991
(b) 0.992
(c) 0.994
(d) 0.993
(e) None of the above.

AGANA FOR GESA ORGANSING SECRETARY HOPEFUL ’19

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(c)
(d)
Q5.what percentage of the emitter current (IE ) recombines at the collector if there is a loss of
0.8%.

97.125%
98.500%
10.125%
99.125%
(e) None of the above.

R E 2kΩ 4V

V V C C
EE

Fig: 1.1:
Use the circuit given in fig: 1.1 to answer question 6 to 9.
The DC alpha (α) of the transistor in the circuit is 0.96. the voltage drop across 2.0kΩ
resistor is
4.0V. Determine

Q6. the collector current IC.

(a) 1.978mA
(b) 2.000mA
(c) 2.083mA
(d) 2.202mA
(e) None of the above.

Q7. the emitter current IE.

(a) 1.978mA
(b) 2.000mA
(c) 2.083mA
(d) 2.202mA
(e) None of the above.

(a)
(b)

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(c)
(d)
Q8. the base current IB.

(a) 78.33μA
(b) 80.33μA
(c) 83.33μA
(d) 92.33μA
(e) None of the above.

Q9. β if the transistor were connected in the common emitter configuration.

19.78
24.00
20.83
22.02
(e) None of the above.

The diodes used in a bridge rectifier circuit have the following parameters:
VT = 0V, rf = 10Ω, RR = ∞, VZ = very large
The secondary winding of the transformer has a resistance RS = 10Ω. A load of 970Ω is
connected across its output. If the voltage across the secondary is vs = 20 sin wt volts, determine
Use the above information to solve question 10 to 14

Q10. PIV rating of the diodes

(a) 10.0V
(b) 20.0V
(c) 12.7V
(d) 157.5V
(e) None of the above.

Q11. dc current through the load.

(a) 10.0mA
(b) 20.0mA
(c) 12.7mA
(d) 157.5mA
(e) None of the above.

Q12. dc power supplied to the load.

(a)
(b)

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(c)
(d)
(a) 10.0mW
(b) 20.0mW
(c) 12.7mW
(d) 157.5mW
(e) None of the above.

Q13. conversion efficiency of the current.

(a) 79.56%
(b) 60.0%
(c) 72.7%
(d) 85.75%
(e) None of the above.

Q14. Compared to a CB amplifier, the CE amplifier has

a higher output
resistance a lower input
resistance

(a)
(b)

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(c)
(d)
a lower current
amplification a higher current
amplification

Q15. A transistor is said to be in a quiescent state when

(a) it is unbiased
(b) no signal is applied to the input
(c) no current are flowing
(d) the emitter-base junction bias is just equal to the collector-base junction bias

Q16. In a given transistor circuit, the base current is 100µA and the collector current is
2.9mA.
Calculate the dc alpha (α) of the transistor.

(a) 1.89
(b) 0.97
(c) 0.99
(d) 0.89

For a transistor connected in CB mode, α = 0.995, IE = 10mA, leakage current ICBO = 0.5µA.

Q17. Determine the value of the collector current IC and base current IB.

(a) IB =43µA, IC =1.96mA

(b) IB =40µA, IC =0.96mA
(c) IB =49.5µA, IC = 0.9505mA
(d) IB =40.89mA, IC =1.96mA

Q18. Determine the value of β and ICEO

(a) β = 0.199 and ICEO = 10.0µA

(b) β = 199 and ICEO = 100µA
(c) β = 19.9 and ICEO = 1.00µA
(d) β = 1.99 and ICEO = 0.100µA

Q19. The rms value of current in a full-wave rectifier is given as

(a) Im/π
(b) Im/2
(c) Im/√2
(d) 2lm/π

Q20. When used in a circuit, a zener diode is always

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(a) at a temperature below 0 °C

(b) connected in series
(c) reverse-biased
(d) forward-biased

Q21. Major part of electric current in an intrinsic semiconductor is due to drift of

(a) conduction –band electrons

(b) valence –band electrons
(c) conduction-band holes
(d) valence-band holes

RS

+
1 KΩ

VI RL VL
VZ

Fig .1.2:
The voltage regulator circuit of fig .1.2 is required to maintain the load voltage V L at 6V.
The circuit derives its power from a supply of VI = 30V. The breakdown voltage of the zener
diode,VZ = 6V, and the maximum current that can be permitted to flow through the zener diode
is =12mA.

Q22. Determine the minimum value of RLmin which will ensure this requirement.
(Take IZmin = 10% of IZmax).

(a) 500Ω
(b) 563Ω
(c) 263Ω
(d) 632Ω

Q23. Determine the maximum value of RLmax which will ensure this requirement.

(a) 500Ω
(b) 563Ω
(c) 263Ω
(d) 632Ω

Q24. Determine the minimum value of the power drop across the zener diode.

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(a) 2.350W
(b) 0.3156W
(c) 3.156W
(d) 4.012W

Q25. Determine the maximum value of the power drop across the zener diode.

(a) 2.350W
(b) 0.3156W
(c) 3.156W
(d) 4.012W

Q26. Which of the following is not true?

(a) A transformer is usually employed in order to step-down the supply voltage (b)
A transformer is usually employed to protect from shocks.
(c) When the sinusoidal input voltage goes positive,
the diode is forward-biased in a half wave rectifier.
(d) For an ideal diode, forward resistance rf =100%. (e)
None of the above.

Q27. Find the average value of the full-wave rectified output voltage if the input voltage is
45V.

(a) 3.86478V
(b) 28.6478V
(c) 38.6478V (d) 2.8478V
rf
Q28. Find the efficiency of a half wave rectifier with 4

RL
(a) 1.0125%
(b) 8.9125%
(c) 8.10%
(d) 9.9125%
(e) None of the above.

A transistor has DC alpha (α) of 0.99 and a collector reverse leakage current ( ICBO ) of
2.5μA. If the emitter current IE = 5mA.

Q29. determine the collector current IC.

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(a) 4.9525μA (b)

4.9525nA
(c) 4.9525A
(d) 4.9525mA
(e) None of the above.

Q30. the base current IB.

(a) 475 x10-5A

(b) 4.75 x10-5A
(c) 4.75 x10-5mA
(d) 4.75 x10-5μA (e) None of the above.

Q31. Which of the following is not true?

(f) A transformer is usually employed in order to step-down the supply voltage (g) A
transformer is usually employed to protect from shocks.
(h) When the sinusoidal input voltage goes positive,
the diode is forward-biased in a half wave rectifier.
(i) For an ideal diode, forward resistance rf =100%. (j)
None of the above.

Q32. Find the average value of the full-wave rectified output voltage if the input voltage is
45V.

(e) 3.86478V
(f) 28.6478V
(g) 38.6478V (h) 2.8478V
rf
Q33. Find the efficiency of a half wave rectifier with 4

RL
(f) 1.0125%
(g) 8.9125%
(h) 8.10%
(i) 9.9125%
(j) None of the above.

A transistor has DC alpha (α) of 0.99 and a collector reverse leakage current ( ICBO ) of
2.5μA. If the emitter current IE = 5mA.

Q34. determine the collector current IC.

(f) 4.9525μA

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(g) 4.9525nA
(h) 4.9525A
(i) 4.9525mA
(j) None of the above.

Q35. the base current IB.

(f) 475 x10-5A

(g) 4.75 x10-5A
(h) 4.75 x10-5mA
(i) 4.75 x10-5μA (j) None of the above.

Q36. The movement of electrons and holes across a PN junction is known as

(a) Depletion Layer

(b) Potential Barrier
(c) Diffusion
(d) Electron and Holes equilibrium
(e) None of the above.

Q37. The external voltage required to overcome this barrier potential to allow electrons to
move freely across the junction is dependent on the type of semiconductor
material and temperature.

(a) TRUE
(b) FALSE
(c) UNKNOWN
(d) NONE OF THE ABOVE

Q38. The potential barrier on a PN Junction will always exist even if the device is not
connected to any external power source.

(a) TRUE
(b) FALSE
(c) UNKNOWN
(d) NONE OF THE ABOVE

Q39. The external voltage applied to the PN Junction for biasing can:
(a) Eliminate the potential barrier.
(b) Increase the voltage of the potential barrier.
(c) Increases or Decrease the potential barrier. (d) None of the above.

Q40. …………………………. is the forward voltage at which the diode starts conducting.

(a) Leakage voltage

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(b) Breakdown voltage

(c) Knee voltage (d) Biasing voltage (e) None of the above.

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