KWAME NKRUMAH UNIVERSITY OF SCIENCE AND

TECHNOLOGY, KUMASI

COLLEGE OF ENGINEERING

B.Sc. (Engineering), Supplementary Examination, August, 2016

First (1st) Year

COE/EE 152: BASIC ELECTRONICS

TIME: 2 HRS 30 MINS

PROGRAM OF STUDY: .............................................................................

INDEX NO:………..........………….............................................................

Instructions

i. Candidates are to indicate their Index Number and Program of Study in the spaces provided.

ii. Candidates are to submit the question booklet together with all rough work if any.

iii. Circle and indicate, from the options lettered A to D, the most suitable answer to the question
statements

iv. Shade the most suitable answer to the question statements on the Scannable Sheet provided

v. Each correct answer carries half (½) a mark

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MULTIPLE CHOICE. Choose the one alternative that best completes the statement or answers the question.

1) In the saturation region, the base-emitter junction ________. 1)

A) and the base-collector junctions are both forward-biased
B) is reversed-biased while the base-collector junction is forward-biased
C) is forward-biased while the base-collector junction is reversed-biased
D) and the base-collector junctions are both reverse-biased

2) A(n) ________ is added to the fixed-bias configuration to improve bias stability. 2)

A) base voltage B) collector resistor
C) emitter resistor D) All of the above

Use the fixed bias circuit below to solve questions 3 to 7

3) Determine the value of the base current, IB 3)

A) 35.75mA B) 35.75μA C) 36.75mA D) 36.75μA

4) Determine the value of the collector current, IC 4)

A) 5.125mA B) 5.125A C) 5.363mA D) 5.363A

5) Determine the value of the collector-emitter voltage, VCE 5)

A) — 4.275V B) 4.275mV C) 42.75V D) 4.275V

6) Determine the value of the collector current at saturation, IC (Sat) 6)

A) 7.5mA B) 7.5A C) 1.5μA D) 15A

7) Determine the value of the collector-emitter voltage at cut-off, VCE (off) 7)

A) 1.5V B) 15V C) 7.5V D) 75V

8) Pentavalent atoms are often referred to as ________. 8)

A) donor atoms B) majority carriers
C) acceptor atoms D) minority carriers

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 9) When voltage-divider bias is used, it is considered appropriate to use the approximate analysis to 9)
determine the bias condition when the resistance R2 is ________ (l+β)RE.
A) very much less than B) greater than
C) less than D) very much greater than

Use the fixed bias circuit below to solve questions 10 to 15

10) Determine the value of the base current, IB 10)

A) 10mA B) 0.1mA C) 100mA D) 10μA

11) Determine the value of the collector current, IC 11)

A) 1A B) 10A C) 1mA D) 10mA

12) Determine the value of the emitter current, IE 12)

A) 1.01A B) 10.1A C) 1.01mA D) 10.1mA

13) Determine the value of the collector-emitter voltage, VCE 13)

A) 9V B) 9.99mV C) 9.99V D) — 990V

14) Determine the value of the collector current at saturation, IC (Sat) 14)
A) 1mA B) 10A C) 10μA D) 10mA

15) Determine the value of the collector-emitter voltage at cut-off, VCE (off) 15)
A) 1V B) 10V C) 100V D) 10mV

16) What denotes the maximum voltage a diode can withstand when reverse-biased? 16)
A) Peak inverse voltage B) Peak forward-bias voltage
C) Reverse breakdown D) Reverse bias

17) When a BJT has its base-emitter junction forward biased and its collector-base junction reverse 17)
biased, it is biased in the ________.
A) cutoff region B) saturation region
C) passive region D) active region

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18) In the active region, the base-emitter junction ________. 18)
A) and the base-collector junctions are both forward-biased
B) and the base-collector junctions are both reverse-biased
C) is reverse-biased while the base-collector junction is forward-biased
D) is forward-biased while the base-collector junction is reversed-biased

19) Why is design for a specific bias point desirable for most amplifiers? 19)
A) To meet manufacturer suggested opening point.
B) It allows optimum dc operation of the circuit.
C) It allows optimum ac operation of the circuit.
D) All of the above

20) Calculate the peak current that will flow through this circuit, assuming an ideal diode. 20)

A) 16.97 mA during the positive half cycle B) 12 mA during the negative half cycle
C) 12 mA during the positive half cycle D) 16.97 mA during the negative half cycle

21) The reverse saturation current of a diode will just about ________ for every 10°C rise in the diode 21)
temperature.
A) decrease proportionately with temperature
B) increase proportionately with temperature
C) double
D) half

22) For basic operation of a transistor the base-emitter junction is ________ biased. 22)
A) reverse- B) forward- C) semi- D) not

23) A BJT has measured dc current values of IB = 0.1 mA and IC = 8.0 mA. When IB is varied by 100 23)
μA, IC changes by 10 mA. What is the value of the β dc for this device?
A) 800 B) 100 C) 10 D) 80

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24) The DC or the static resistance of the diode is given by ________. 24)
VD1-VD2 VD
A) RD = B) RD =
ID1-ID2 ID
VVD
C) RD = D) All of the above can be used.
VID

Use the voltage divider bias circuit below to solve questions 25 to 33. Assume that hFE RE > 10R2

25) Determine the value of the base voltage, VB 25)

A) 4.40V B) 2.13V C) 4.14V D) 41.4V

26) Determine the value of the emitter voltage, VE 26)

A) 1.34V B) 3.44V C) 1.43V D) 3.70V

27) Determine the value of the emitter current, IE 27)

A) 0.59mA B) 0.65mA C) 1.56mA D) 0.61mA

28) Determine the value of the collector current at the Q-point, ICQ 28)
A) 0.59mA B) 0.65mA C) 1.56mA D) 0.61mA

29) Determine the value of the collector-emitter voltage at the Q-point, VCEQ 29)
A) 15.162V B) 10.616V C) 16.559V D) 7.175V

30) Determine the value of the current across the resistor R 2, I2 30)
A) 468.09μA B) 226.59μA C) 440.53μA D) 440.53mA

31) Determine the value of the base current, IB 31)

A) 0A B) 440.53μA C) 4.4053μA D) 15.485μA

32) Determine the value of the collector current at saturation, IC (Sat) 32)
A) 3.333mA B) 9.091mA C) 2.439mA D) 1.549mA

33) Determine the value of the collector-emitter voltage at cut-off, VCE (off) 33)
A) 0V B) 20V C) 10V D) 9.09V

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34) A given transistor has ratings of maximum collector current equal to 200 mA and a beta that varies 34)
between 150 and 200. What is the maximum allowable value of base current for the device?
A) 1 mA B) 4 mA
C) 1.33 mA D) None of the above

35) Which amplifier configuration is the least often used? 35)

A) Common Base B) Common Collector
C) Darlington Pair D) Common Emitter

36) When a Zener diode circuit is used to stabilize the output voltage given a fixed load resistor and a 36)
variable input voltage, the input voltage must be ________.
A) large enough to turn off the Zener diode B) small enough to turn on the Zener diode
C) small enough to turn off the Zener diode D) large enough to turn on the Zener diode

37) Transistor circuits that are quite stable and relatively insensitive to temperature variations have 37)
________.
A) relative high supply voltages B) small betas
C) large betas D) low supply voltages

38) If VCE is 13 V and Vcc is 15 V, this transitor is 38)

A) properly biased B) approaching cutoff
C) a pnp transistor D) approaching saturation

39) Which transistor amplifier configuration is the most commonly used? 39)
A) common-collector
B) common-emitter
C) common-base
D) None of these are used more often than the others.

40) An open diode in a bridge rectifier circuit will produce what type of waveform? 40)
A) Half-wave with decreased ripple B) Half-wave with increased ripple
C) Full-wave with increased ripple D) Full-wave with decreased ripple

Use the voltage divider bias circuit below to solve questions 41 to 50. Assume that h FERE > 10R2

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41) Determine the value of hFE (ave) 41)
A) 196 B) 123 C) 11 D) 99

42) Determine the value of the base voltage, VB 42)

A) 3V B) 2V C) 1V D) 0.5V

43) Determine the value of the emitter voltage, VE 43)

A) 3.7V B) 1.3V C) 0.3V D) 2.3V

44) Determine the value of the emitter current, IE 44)

A) 1.61mA B) 1.0mA C) 0.13mA D) 10mA

45) Determine the value of the collector current at the Q-point, ICQ 45)
A) 1.61mA B) 1.0mA C) 0.13mA D) 10mA

46) Determine the value of the collector-emitter voltage at the Q-point, VCEQ 46)
A) 5.7V B) 1.92V C) 11.81V D) 3.7V

47) Determine the value of the current across the resistor R 2, I2 47)
A) 333.33μA B) 166.66μA C) 450μA D) 500μA

48) Determine the value of the base current, IB 48)

A) 0A B) 19.608μA C) 10μA D) 5.102μA

49) Determine the value of the collector current at saturation, IC (Sat) 49)
A) 1.905mA B) 3mA C) 5.217mA D) 6.66mA

50) Determine the value of the collector-emitter voltage at cut-off, VCE (off) 50)
A) 0V B) 10V C) 12V D) 20V

51) Which of the following biasing combinations is not normally associated with one of the three 51)
transistor operating regions'?
A) E-B junction = forward, C-B junction = reverse
B) E-B junction = reverse, C-B junction = reverse
C) E-B junction = reverse, C-B junction = forward
D) All of the above

52) When a p-n junction is reverse-biased, the depletion layer is ________ and the device acts as a 52)
near-perfect ________.
A) narrowed; insulator B) widened; insulator
C) narrowed; conductor D) widened; conductor

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53) The term ________ is applied to any material that supports a generous flow of charge when a 53)
voltage source of limited magnitude is applied across its terminals.
A) semiconductor B) dielectric C) insulator D) conductor

Use the emitter bias circuit below to solve questions 54 to 58

54) Determine the value of the base current, IB 54)

A) 47.789μA B) 46.396μA C) 0A D) 95.579μA

55) Determine the value of the collector current at the Q-point, ICQ 55)
A) 1.61mA B) 11.6mA C) 23.9mA D) 11.9mA

56) Determine the value of the collector-emitter voltage at the Q-point, VCEQ 56)
A) 4.8V B) 71.7V C) 13.2V D) 10.8V

57) Determine the value of the collector current at saturation, IC (Sat) 57)
A) 8mA B) 16mA C) 24mA D) 48mA

58) Determine the value of the collector-emitter voltage at cut-off, VCE (off) 58)
A) 0V B) 24V C) 12V D) 48V

59) In the design of an emitter-bias stabilized circuit engineering, judgment must be used because the 59)
________.
A) relative voltage levels have not been defined
B) emitter resistor is usually unknown
C) collector resistor is usually unknown
D) All of the above

60) There are transistors that are called switching transistors because ________. 60)
A) of the speed at which they can be changed from on to off
B) of the voltage they can transfer from input to output
C) of the power they can transfer from input to output
D) they have a built in switch

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61) The majority carriers in the p region of a diode 61)
A) a much fewer in number than the majority carriers in the n region
B) are electrons
C) a much less in number than the majority carriers in the n region
D) are holes

62) Doping is used to ________. 62)

A) increase the conductivity of an intrinsic semiconductor
B) increase the insulative quality of an intrinsic semiconductor
C) stabilize the conductivity of an intrinsic semiconductor
D) decrease the conductivity of an intrinsic semiconductor

63) The term bipolar means: 63)

A) the use of both holes and electrons as carriers
B) electrons make up the majority carriers
C) polarity is unimportant
D) diodes only

64) Voltage-divider bias stability is ________. 64)

A) dependent on the collector resistor B) independent of beta
C) dependent on alpha D) dependent of beta

65) Collector-feedback bias ________. 65)

A) is not totally independent of beta
B) provides an improved level of stability over fixed-bias
C) provides a feedback path from collector to base
D) All of the above

Use the emitter bias circuit below to solve questions 66 to 70

66) Determine the value of the base current, IB 66)

A) 93μA B) 44.150μA C) 0A D) 41.04μA

67) Determine the value of the collector current at the Q-point, ICQ 67)
A) 6.156mA B) 13.95mA C) 6.623mA D) 4.415mA

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68) Determine the value of the collector-emitter voltage at the Q-point, VCEQ 68)
A) 3.851V B) 6.149V C) 16.149V D) 20V

69) Determine the value of the collector current at saturation, IC (Sat) 69)
A) 8.89mA B) 13.33mA C) 4.44mA D) 44.44mA

70) Determine the value of the collector-emitter voltage at cut-off, VCE (off) 70)
A) 10V B) 0V C) 20V D) 40V

71) A typical Zener diode regulator circuit uses a ________. 71)

A) resistor in parallel with the load
B) dropping resistor in series with the load
C) Zener diode in parallel with the series resistor
D) Zener diode in series with the load

72) When a BJT has its base-emitter junction reverse biased and its collector-base junction reverse 72)
biased, it is in the ________.
A) saturation region B) cutoff region
C) active region D) passive region

73) When a BJT is operating in the saturation region the voltage drop from the collector to the emitter 73)
VCE is approximately equal to ________.
A) the collector supply voltage
B) the collector current times the collector resistor
C) zero (about 0.3 Volts)
D) the emitter voltage

74) The maximum reverse bias potential that can be applied to a Zener diode before it enters the Zener 74)
region is called the ________.
A) threshold voltage B) PIV
C) depletion voltage D) barrier voltage

75) For this clipping circuit, what is the maximum output voltage when the diode is not conducting? 75)

A) + 19.47 V B) - 16.97 V C) + 16.97 V D) + 2.5 V

76) When a p-n junction is reverse-biased, its junction resistance is ________. 76)
A) low
B) high
C) constantly changing
D) determined by the components that are external to the device

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77) What can be said regarding the energy level of an electron? 77)
A) Electrons exhibit energy characteristics only in the presence of protons
B) Electrons in the shell closest to the nucleus of an atom have the highest energy level
C) Electrons in the outermost shell have the highest energy level
D) All electrons have the same energy level

78) Which of the following is true for this BJT circuit? 78)

A) The base-emitter and collector-base junctions are both reverse-biased.

B) The base-emitter and collector-base junctions are both forward-biased.
C) The base-emitter junction is reverse-biased and the collector-base junction is
forward-biased.
D) The base-emitter junction is forward-biased and the collector-base junction is
reversed-biased.

79) For this series diode configuration, use the diode characteristic to estimate the value of VR. 79)

A) 92 mV B) 9.2 V C) 0.92 V D) 10 V

80) When a BJT has its base-emitter junction forward biased and its collector-base junction also 80)
forward biased, it is in the ________.
A) active region B) passive region
C) cut-off region D) saturation region

81) Two of the factors associated with bias stability are ________. 81)
A) the β and the junction temperature B) age and amount of use
C) voltage and current D) None of the above

82) A full-wave center-tapped rectifier has a secondary maximum voltage of 20 Vm and a 4.7 kΩ load 82)
resistance. What is the dc load current for the circuit?
A) 1.4 mA B) 1.26 mA C) 2.61 mA D) 629.8 mA

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83) In a p-type material, the minority carriers are ________. 83)
A) conduction-band holes B) valence-band holes
C) valence-band electrons D) conduction-band electrons

84) A BJT has measured dc current values of IB = 1 mA and IC = 80 mA. When IB is varied by 100 μA, 84)
IC changes by 10 mA. What is the value of β ac for the device?
A) 100 B) 80 C) 10 D) 800

85) What is the purpose of a current-limiting resistor in a diode circuit? 85)

A) A current-limiting resistor is only necessary if it is reverse biased
B) The resistor prevents the diode from becoming reverse-biased
C) A properly biased diode is like a short circuit, therefore a resistor provides a voltage drop
D) The resistor will increase the PIV rating of the diode

86) Calculate the base current for this voltage-divider bias circuit. 86)

A) 76.8 μA B) 596.55 μA C) 34.37 μA D) 233.78 μA

87) VCC = 12 volts, RC = 1k, determine the load line IC and VCE intercepts 87)
A) IC = .012mA and VCE = 1.2 volts B) IC = IB = 12mA and VCE = 12m volts
C) IC = 12mA and VCE = 12 volts D) IC = 1.2mA and VCE = 12m volts

88) A p-n junction is forward biased when ________. 88)

A) the applied potential causes the n-type material to be more negative than the p-type material
B) the applied potential causes the n-type material to be more positive than the p-type material
C) both materials are at the same potential
D) None of these

89) When in its "on" state, the voltage across an ideal Zener diode, VZ ________. 89)
A) gets larger with an increase in applied voltage
B) gets smaller with an increase in applied voltage
C) increases sharply with a decrease in applied voltage
D) None of these

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90) For a given BJT, β = 400. What is the value of α for the device? 90)
A) 1.00 B) 1.0025 C) 0.002 D) 0.9975

91) When a BJT is biased in the active region, its base-emitter junction is ________-biased and its 91)
collector-base junction is ________-biased.
A) reverse; forward B) forward; reverse
C) reverse; reverse D) forward; forward

92) A Zener diode is designed to operate in the ________ region of its characteristic curve. 92)
A) reverse breakdown B) zero voltage
C) reverse bias D) forward operating

93) When trivalent elements are used in doping, the resulting material is called ________ material and 93)
has an excess of ________.
A) p-type; conduction-band electrons B) n-type; valence-band holes
C) p-type; valence-band holes D) n-type; conduction-band electrons

94) When recombination occurs, an electron 94)

A) loses energy B) drops into the valence band
C) drops into a hole D) all of the above

95) Collector feedback bias works on what principle? 95)

A) falling collector currents tend to attenuate base current
B) rising collector currents tend to attenuate base current
C) base current will always remain constant
D) positive feedback adds to collector current

96) The emitter-follower configuration has ________. 96)

A) a 180° phase shift
B) the emitter connected to dc ground potential
C) an output voltage slightly greater than the input voltage
D) None of the above

97) The typical range of the ac resistance of a diode in the active region is ________. 97)
A) 100 Ω to 500 Ω B) 1 Ω to 10 Ω C) 1 Ω to 100 Ω D) 50 Ω to 100 Ω

98) In a Common-Emitter amplifier 98)

A) the emitter is always above ground potential
B) the emitter is the reference for the input signal
C) the output is taken from the collector
D) the output signal is taken from the emitter

99) An npn BJT has the following values meausred: Vc = 8.3 V, VE = 1.1 V and Vcc = 18 V. The value 99)
of VCE must be
A) Cannot be deternined, it depends on the value of β.
B) 8.6 V
C) 9.4 V
D) 27.4 V

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100) When pentavalent elements are used in doping, the resulting material is called ________ material 100)
and has an excess of ________.
A) p-type; conduction-band electrons B) p-type; valence-band holes
C) n-type; valence-band holes D) n-type; conduction-band electrons

101) When a BJT is biased in the cut-off region, its base-emitter junction is ________-biased and its 101)
collector-base junction is ________-biased.
A) forward; reverse B) forward; forward
C) reverse; reverse D) reverse; forward

102) A given BJT has an emitter current of 15 mA and a collector current of 14.95 mA. What is the exact 102)
value of β?
A) 300 B) 250 C) 1.003 D) 299

103) If the base of a transistor is open, the voltage at the collector will be 103)
A) it dpends on the beta of the transitor B) VCC
C) VCC/2 D) VB

104) Increasing the temperature of a forward-biased diode ________. 104)

A) causes forward current to increase
B) causes forward current to decrease
C) has no significant effect effect on the forward current
D) None of these

105) When a BJT has its base-emitter junction reverse biased and its base-collector junction forward 105)
biased, it is biased in the ________.
A) saturation region B) cutoff region
C) passive region D) active region

106) As the device temperature increases, semiconductor materials tend to have ________. 106)
A) an increasing number of free electrons
B) lower conduction levels
C) relatively unchanged conduction conduction levels
D) a decreasing number of free electrons

107) In a small-signal transistor, the typical range of the parameter β is ________. 107)
A) large and in the range of about 50 to 400
B) between 0 and 100
C) greater than 100
D) almost equal to 100 but always less than 100 (90 to 100)

108) The common-emitter, forward-current, amplification factor is better known as ________. 108)
A) dc β B) dc α C) ac α D) ac β

109) The Zener diode must be operated such that ________. 109)
A) IZ × VZ = PZ B) the applied voltage is greater than VZ
C) PZ is less than the specified PZmax D) All of these

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110) A p-n junction is reverse biased when ________. 110)
A) the current flow across the junction is based on minority carrier transfer
B) the applied potential causes the n-type material to be more positive than the p-type material
C) the applied potential causes the p-type material to be more negative than the n-type material
D) All of the above

111) Which best describes a conducting forward-biased diode? 111)

A) Negative cathode, positive anode VF = 0.7 volts
B) Positive cathode, negative anode VF = .2 volts
C) Negative cathode, positive anode VF = .2 volts
D) Positive cathode, negative anode VF = 10 volts

112) If one silicon diode and one germanium diode are connected in series, the voltage drop across the 112)
combination of the two diodes will be equal to ________.
A) the forward drop equal to that of the germanium diode
B) the forward drop equal to that of the silicon diode
C) the forward drop equal to that of the difference of the voltage drops across the two diodes
D) the forward drop equal to that of the sum of the voltage drops across the two diodes

113) As semiconductor devices have become ________ one of the primary purposes of the container is 113)
simply to provide a means for physical handling.
A) miniaturized B) more powerful C) widely used D) larger

114) When the Zener regulator is used to stabilize the output voltage, given a fixed input voltage and a 114)
variable load resistance, a load resistance that is too small results in ________.
A) VZ being equal to Vin B) VL being greater than VZ
C) VL being less than VZ D) VL being equal to VZ

115) The diode electrode with p-type material is called the ________. 115)
A) cathode B) Zener region
C) depletion region D) anode

116) A positive full-wave center-tapped rectifier has a secondary voltage of 20 Vm . The peak load 116)
voltage for the circuit is ________ if the diode drop is included.
A) 9.3 Vp B) 20 Vp C) 10 Vp D) 19.3 Vp

117) In an n-type material, the majority carriers are ________. 117)

A) valence-band holes B) valence-band electron
C) conduction-band holes D) conduction-band electrons

118) An npn transitor is biased using collector feedback. Rc = 2.2 kΩ and RB = 220 kΩ. Vcc = 25 V and β 118)
= 250. Solve for the value of base current.
A) 31.6 μA B) 7.9 mA C) 214 μA D) 3.16 μA

119) A BJT has measured dc current values of IB = 1 mA and IC = 80 mA. When IB is varied by 100 μA, 119)
IC changes by 10 mA. What is the value of β dc for the device?
A) 80 B) 100 C) 800 D) 10

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120) To design a transistor circuit for maximum stability, one must consider ________. 120)
A) the transistor's beta stability factor
B) the collector leakage current stability factor
C) the base-emitter junction voltage stability factor
D) All of the above

121) For this circuit, determine the load-line intersection with the two axis. 121)

A) VD = 1 V and ID = l mA B) VD = 10 V and ID = l0 mA
C) VD = 10 V and ID = l mA D) VD = 1 V and ID = l0 mA

122) If a zener diode is connected to the base of a transistor, chances are it is a ________ . 122)
A) beta-stabilized circuit B) current mirror
C) constant-current source D) gain-stabilized amplifier

123) Calculate the maximum collector current for this circuit. 123)

A) 0.904 mA B) 0.056 mA C) 6.0 mA D) 0.96 mA

124) The ideal diode symbol has an arrow that points in the direction of ________. 124)
A) the leakage current flow B) the forward current flow
C) positive terminal under forward bias D) All of the above

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125) For this clipping circuit, what is the minimum output voltage when the diode is conducting? 125)

A) + 16.97 V B) - 1.0 V C) - 17.97 V D) - 16.97 V

126) The Zener diode is on if the applied voltage, V, is ________. 126)

A) V < VZ / 2 B) V ≥ VZ C) V > 2VZ D) V < VZ

127) When a transistor is in saturation, the total collector current is limited by ________. 127)
A) collector supply, collector-to-emitter voltage, and the total collector circuit resistance
B) collector-to-emitter and collector supply voltage
C) the transistor
D) collector supply voltage and the total resistance in the collector and emitter circuits

128) The diode electrode with n-type material is called the ________. 128)
A) Zener region B) anode
C) depletion region D) cathode

129) The term quiescent means ________. 129)

A) active B) inactive
C) at rest D) midpoint-biased

130) The change in β and VCE that can occur when the temperature changes is known as ________. 130)
A) Q-point movement B) midpoint bias
C) midpoint movement D) output movement

131) Variation in h fe is influenced by ________. 131)

A) bias type and device size
B) junction temperature and collector current
C) temperature and base current
D) device size and base current

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132) Calculate the base current for this emitter-stabilized bias circuit. 132)

A) 89.1 μA B) 89.0 mA
C) 0.119 mA D) None of the above

133) A given BJT has an alpha of 0.9985 and a collector current of 15 mA. What is the value of base 133)
current?
A) 15 mA B) 14.85 mA
C) 15.15 mA D) None of the above

134) Which bias circuit is found chiefly in integrated circuit applications? 134)
A) voltage divider bias B) collector feedback bias
C) emitter bias D) base bias

135) When a BJT is biased in the saturation region, its base-emitter junction is ________-biased and its 135)
collector-base junction is ________-biased.
A) forward; reverse B) reverse; forward
C) forward; forward D) reverse; reverse

136) A bridge rectifier has values of Vm = 177 V, turns ratio = 5 : 1, and RL = 500 Ω. What is the dc 136)
output voltage?
A) 9.91 V B) 21.62 V C) 6.88 V D) 3.75 V

18
137) What are the minimum and maximum values of current flowing in the variable load resistor while 137)
the diode is operating in the Zener region? The zener voltage is 10 V.

A) 8 mA and 35 mA
B) 8 mA and 40 mA
C) 12.5 mA and 40 mA
D) Need to know the load resistance to determine the values.

138) The value of VD in this circuit is ________. 138)

A) 11.3 V B) 0.3 V C) 0.7 V D) 10.6 V

139) A half-wave rectifier with the diode arrow pointing away from the load has a DC output voltage 139)
of ________ for an AC input voltage of 20 V maximum.
A) -6.14 V B) 19.3 V C) 12.49 V D) -13.65 V

140) Why are bridge rectifiers preferred over full-wave center-tapped rectifiers? 140)
A) They provide higher dc output voltages.
B) They do not require the use of a center-tapped transformer.
C) They require a lower PIV rating.
D) All the above

19
Answer Key
Testname: BASIC ELECTRONICS 2016_SUPPLEXAM

1) A
2) C
3) B
4) C
5) D
6) A
7) B
8) A
9) D
10) D
11) C
12) C
13) A
14) D
15) B
16) A
17) D
18) D
19) D
20) D
21) C
22) B
23) D
24) B
25) C
26) B
27) C
28) C
29) D
30) C
31) D
32) C
33) B
34) A
35) A
36) D
37) C
38) B
39) B
40) B
41) D
42) A
43) D
44) B
45) B
46) A
47) D
48) C
49) A
50) C
20
Answer Key
Testname: BASIC ELECTRONICS 2016_SUPPLEXAM

51) C
52) B
53) D
54) B
55) B
56) C
57) B
58) D
59) D
60) A
61) C
62) A
63) A
64) B
65) D
66) D
67) B
68) A
69) A
70) A
71) B
72) B
73) C
74) B
75) C
76) B
77) C
78) D
79) B
80) D
81) A
82) B
83) D
84) A
85) C
86) C
87) C
88) A
89) D
90) D
91) B
92) A
93) C
94) D
95) B
96) D
97) C
98) C
99) B
100) D
21
Answer Key
Testname: BASIC ELECTRONICS 2016_SUPPLEXAM

101) C
102) D
103) B
104) A
105) B
106) A
107) A
108) D
109) D
110) D
111) A
112) D
113) A
114) C
115) D
116) A
117) D
118) A
119) A
120) D
121) B
122) C
123) C
124) B
125) B
126) B
127) D
128) D
129) B
130) A
131) B
132) A
133) D
134) C
135) C
136) B
137) B
138) B
139) A
140) D

22