1

IIT-JAM PHYSICS
TRANSISTOR
PREVIOUS YEARS’ QUESTIONS

1. Transistor is a: [BHU 2014] (a) Zener diode (b) UJT

(a) Voltage controlled device (c) JFET (d) BJT
(b) Current controlled device 7. In a Bipolar Junction Transistor (BJT), the base-
(c) Both voltage and current controlled device width is kept thinner than Emitter and Collector
(d) Neither voltage nor current controlled device width. This is to [HCU 2015]
2. The transistor amplifier has highest input imped- (a) reduce the base current
ance in: [BHU 2014] (b) increase the base current
(a) CB configuration (c) increase the emitter current
(b) CE configuration (d) decrease the collector current
(c) CC configurration 8. When transistor is operating in active region, col-
(d) Both in CC and CE configuration lector junction is: [BHU 2014]
3 Role of the resistance (RE) connected with the (a) Reversed biased for npn transistor only
emitter of an npn transistor in the CE amplifier cir- (b) Reversed biased for pnp transistor only
cuit is [DU 2015] (c) Forward biased for both npn and pnp transis-
(a) to fix the Q point at the center of the load line tor
(b) to increase the band width of the amplifier (d) Reversed biased for both npn and pnp tran-
(c) to provide a path to the ac signal to ground sistor
(d) to provide a negative feedback for dc bias sta- 9. A BJT whose base-emitter and base-collector
bilization junctions are forward biased is said to be operat-
4. FET is ______operated device [CUCET-2014] ing in [HCU 2016]
(a) voltage (b) current (a) active region
(c) Temperature (d) wattage (b) saturation region
5. Which of the following statements is correct ? (c) reverse active region
[HCU-2017] (d) cut-off region
(a) BJT is a voltage controlled device and FET is 10. The threshold voltage VT is negative for
a current controlled device.
[DU 2016]
(b) BJT is a current controlled device and FET is
(a) an n-channel enhancement MOSFET
a voltage controlled device
(b) an n-channel depletion MOSFET
(c) Both BJT and FET are voltage controlled de-
(c) a p-channel depletion MOSFET
vices.
(d) all active unipolar devices
(d) Both BJT and FET are current controlled de-
11. The maximum efficiency of an npn BJT amplifier
vices
6. An electronic device exhibiting a negative resis- is about  4 under the [DU 2014]
tance characteristic is the [DU 2015]
(a) Class A configuration

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(b) Class B push-pull configuration (c) Very high RBE and very low RBC
(c) Class C tuned configuration
(d) Class AB configuration (d) Both RBE and RBC are very high
12. In an n-p-n transistor circuit, the collector current
18. What is the operating point VCF , I C  for the tran-
is 15 mA. If 95% of the electrons emitted reach
the collector, what is the base current? sistor circuit shown in figure? (Assume IC = IE and
[HCU 2014] VBE = 0.77) [HCU 2015]
(a) 0.345 mA (b) 1.58 mA
1k
(c) 0.79 mA (d) 15.79 mA
RC
13. The relation between current gains  and  of a 
transistor is [BHU 2014] VCC
VBB 15V
 (  1)
(a)   (b)   5V RE 4.3k
(  1) 

  
(c)   (d)   (a) 5V, 2 mA (b) 7.5V, 1.5 mA
(  1) 
(c) 7.5 V, 1 mA (d) 10V, mA
14. A transistor in common base configuration has ra- 19. The part of the output characteristics of an n-p-n
tio of collector current to emitter current  and transistor, which is used while operating it as an
ratio of collector current to base current  . Which amplifier is the [HCU 2012]
of the following is true? [JEST] (a) saturation region (b) active region
(c) cut-off region (d) break down region
(a)  

(b)  
  1 20. In the given circuit , if the DC gain of the transistor
  1  changes from 100 to 200, the collector current
will [HCU-2019]
(c)  

(d)  
  1
  1  1k
15. For a transistor,   100 . The value of  is
[CUCET-2012]
5V +
–
+ 12V
–
(a) 1.01 (b) 0.99
2k
(c) 100 (d) 0.01
16. To operate a npn transistor in active region, its
emitter-base and collector-base junction respec-
tively, should be [JAM 2014] (a) increase by 2 times
(a) forward biased and reversed biased (b) decrease by 2 times
(b) forward biased and forward biased (c) remains the same
(c) reversed biased and forward biased (d) saturate at 1.2A
(d) reversed biased and reversed biased 21. An n-p-n transistor with DC gain of 100 is config-
17. For using a transistor as an amplifier, choose the ured as common emitter amplifier. A base supply
correct option regarding the resistance of base- of 10V forward biases the emitter diode through
emitter  RBE  and base collector  RBC  junctions a 220k resistor. A collector supply of 10V re-

[JAM 2019] verse biases the collector diode through 1k re-
sistor. During the circuit operation, if the base re-
(a) Both RBE and RBC are very low
sistor is open, the collector-emitter voltage is
(b) Very low RBE and very high RBC [HCU-2019]

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(a) 0.7V (b) 5.5V off voltage VP  4V . If ti is used in the circuit
(c) 9.3V (d) 10V
shown in the fiugre below find the value of voltage
22. In a common emitter transistor circuit, the collec-
amplification for small signals : [JNU 2011]
tor resistance  Rc  is 4k , emitter resistance 15V
1k
 RE  is zero,  of the transistor is 100 and the D
Output
10k
biasing voltage VCC  is 10V. What is the collec- G

Sign al
Inp ut
tor current  I C  if the base current  I B  is 50A –2.0V S

[HCU-2018]
(a) 5mA (b) 20mA (a) –4.0 (b) –4.5
(c) 100mA (d) 2mA (c) –7.5 (d) –10.0
26. The circuit depicted on the right has been made
23. The minimum value of base current  I B  required with a silicon n-p-n transistor. Assuming that there
to saturate the transistor shown in the figure be- will be 0.7V drop across a forward biased silicon
low is [HCU-2013 & 17] p-n junction, the power dissipated across the tran-
1.2V sistor will be, approximately, [TIFR-2013]
DC = 50
VCE(sat) = 0V (a) 53 mW (b) 94 mW
1 .2k

(c) 17 mW (d) 67 mW
RB VCC  15V
V in

RL  500

Vout
(a) 0.2mA (b) 10mA
(c) 1.2mA (d) 0.12mA Vin  2V
24. What is the DC base current (approximated to
nearest integer value in μA ) for the following n - R  100
p - n silicon transistor circuit, given [JEST]
R1  75 , R2  4.0k, R3  2.1k, 27. All resistors in the circuit on the right have a toler-
R4  2.6k, R5  6.0k, ance of  5% . [TIFR 2015]

R6  6.8k , C1  1  F , C2  2  F ,
+10V
VC  15 V and β dc  75
C3 R1 150k

R5 C1 300k
R6 R4 R2 
 100k 
R3 C2
VC 51k 

(a) 20 (b) 24
(c) 16 (d) 32
25 A JFET amplifier has I DSS  16mA and a pinch
Assuming a diode drop of 0.7 V, which of the fol-

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lowing is the lowest possible value of the collector

voltage ?
30
(a) 3.1 V (b) 4.1 V
I b  50  A
(c) 4.7 V (d) 5.2 V 25
28. In the transistor circuit shown on the right, assume I b  40  A

Collector Current Ic (mA)

that the voltage drop between the base and the 20
emitter is 0.5V. [TIFR 2016] I b  30 A
15
I b  20  A
10
Load Base Current I b  10 A
R2
5
7.5V
0 2 4 6 8 10 12 14 16
R1 2k Collector-to-Emitter Voltage VCE (V)

What will be the ratio of the resistances R2 R1 , VCC = 15 V

in order to make this circuit function as a source
of constant current, I = 1 mA ?
(a) 4.5 (b) 3.0 RL  500
(c) 2.5 (d) 2.0 R L  65k  Vout
29. Which digital logic gate is mimicked by the fol-
Vin
lowing diode and silicon transistor circuit
[TIFR 2017]

+5V +5V
R1 (a) 4 V (b) 6 V
R C2 (c) 8 V (d) 10 V
R C1 (e) 12 V (f) 14 V
Vout 31 Consider the voltage regulator circuit shown in the
A
figure below [JNU 2015]
B R3
R2
Vin Vo u t

+15V
10k 2k

30. A plot of the common-emitter characteristics of a Iz

silicon n-p-n transistor is shown below. Given this 6.0V 4k

information and assuming that there will be a 0.7
V drop across a forward biased silicon p-n junc-
tion, the approximate value of the output voltage
The current in the zener diode I z and the output
Vout for an input voltage Vin = 2 V in the adjacent
circuit will be [TIFR 2010] voltage Vout are, respectively..
(a) 1.5 mA and 6.0 V
(b) 1.5 mA and 9.7 V

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(c) 0.9 mA and 9.0 V

13 mA
(d) 0.9 mA and 8.3 V
Q-point
(e) 0.9 mA and 6.0V (d) (7.5V, 6.5 mA)
32. The circuit shown below IC
VCC
R1 VCC 15V
C1 T1 NAT (NUMERICAL ANSWER TYPE)
C2 1. For the following circuit, the collector voltage with
V0
R2 respect to ground will be ____________V.
R3
(Emitter diode voltage is 0.7V and  DC of the
transistor is large)
(a) Is a common-emitter amplifier.
(Specify your answer in volts upto one digits after
(b) Uses a pnp transistor.
the decimal point) [JAM 2018]
(c) Is an oscillator.
10V
(d) Has a voltage gain less than one.
33. Consider the following circuit in which the current 3k
gain β dc of the transistor is 100.
15 V

3k
1k
100k 900
 3V
2. The current gain of the transistor in the following
circuit is β dc  100 . The value of collector current
100 IC is _________mA.
12V

Which one of the following correctly represents

the load line (collector current IC with respect to 3k
F
collector emitter voltage VCE) and Q-point of this
circuit ? V0
150k
15 mA Q-point Vi
(2V, 13 mA) F
(a)
3k
IC

VCC 15V 3. For the transistor shown in the figure, assume

VBE  0.7V and β dc  100. If Vin  5V, Vout (in
13 mA Q-point
(2V, 10 mA) Volts) is _______. (Give your answer upto one
(b) decimal place).
IC
10V
VCC 15V
3k
13 mA
Q-point
(7.5V, 7.5 mA) Vin
Vout
(c) IC
200k
VCC 15V
1k

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4. In the circuit given below, the collector to emitter [JEST 2108]
voltage VCE is ________________ V. (Neglect iC

VBE , take   100 ) [JAM 2016]

RC

Vcc = +10V C +
– V CC
RB B
V CE

5k  5k  iB
+
V
– BB
E
VCE iE

8. In the transistor circuit given in the figure, the emit-

ter-bias junction has a voltage drop of 0.7V. A
5k  10k  collector-emitter voltage of 14V reverse biases the
collector. Assuming the collector current to be the
same as the emitter current, the value of RB is
5. In the given circuit, VCC  10V and   100 for ___ k .
20V
the n-p-n transistor. The collector voltage VC (in
volts) is ________________ [JAM 2015]
RB IB 2k IC

VCC
  
1K
1k I
E

VC
100K
50V SUBJECTIVE TYPE
1. For the transistor circuit shown below, evaluate
VE , RB and RC given IC = 1 mA,
6 The value of emitter current in the given circuit is
VCE  3.8V,VBE  0.7 V and VCC  10 V . Use
__  A . (Round off to 1 decimal place)
[JAM 2019] the approximation I C  I E . [JAM 2006]
+V CC = 10V

VCC 10V
2 4k
RB RC
VC

VE
C 24k 1.3k 
B

E
0.3V
+
2k C
– E 2. For the given circuit, calculate the input imped-
ance, output impedance and voltage gain.
7. Conisder the transistor circuit shown in the figure. 26 mV
Use   200, VBE  0.7 V and re 
Assume VBEQ  0.7V , VBB  6V and the leakage IE
current is negligible. What is the required value of [JAM 2013]
RB in kilo-ohms if the base current is to be 4  A

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20V

2.2k
12k 

10F 1F
5k 
3.9k
1k 
50V
1k 
20F

3. For the transistor shown in the figure, the dc cur-

rent gain dc  50 and VBE  0.7 V . The switch
S is initially open. [JAM 2010]
(a) Calculate the voltage at point A. If the switch
S is now closed, what would be the voltage at
point A. ?
(b) Draw the dc load line and find the Q-point of
the circuit with the switch S remaining closed.

+5V

10k  500 
S
A
B E
10k  260 

ANSWER KEY
1. (b) 2. (c) 3. (b)
4. (a) 5. (b) 6. (b)
7. (c) 8. (d) 9. (b)
10. (b) 11. (c) 12. (c)
13. (b) 14. (a) 15. (b)
16. (a) 17. (b) 18. (d)
19. (b) 20. (c) 21. (d)
22. (*) 23. (a) 24. (c)
25. (a) 26. (b) 27. (b)
28. (d) 29. (AND) 30. (d)
31. (c) 32. (d) 33. (a)
NAT (NUMERICAL ANSWER TYPE)
1. (3.0 to 3.2) 2. (1.4 to 1.7)
3. (5.5 to 5.9) 4. (2 to 3)
5. (5.5 to 5.9) 6. (443 to 445)
7. (1325) 8. (85)

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