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range from 0.95 to 0.99 or greater, but α: DC DC

1. This document contains a final exam for a basic electronics course covering topics like transistors, biasing, and measurements. 2. The exam has multiple choice questions, true/false, and problems involving calculating currents, voltages, and resistor values in transistor circuits. 3. Key transistor concepts assessed include junctions, biasing methods, current gain, voltage gain, cutoff, saturation, and using specifications like beta to solve circuit problems.

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Reynalene Panaligan
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117 views5 pages

range from 0.95 to 0.99 or greater, but α: DC DC

1. This document contains a final exam for a basic electronics course covering topics like transistors, biasing, and measurements. 2. The exam has multiple choice questions, true/false, and problems involving calculating currents, voltages, and resistor values in transistor circuits. 3. Key transistor concepts assessed include junctions, biasing methods, current gain, voltage gain, cutoff, saturation, and using specifications like beta to solve circuit problems.

Uploaded by

Reynalene Panaligan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOC, PDF, TXT or read online on Scribd
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Republic of the Philippines

BATANGAS STATE UNIVERSITY


Gov. Pablo Borbon Campus II, Batangas City

COLLEGE OF ENGINEERING, ARCHITECTURE, FINE ARTS &


COMPUTING SCIENCES

ECE/ ICE / MEXE DEPARTMENT

FINAL EXAMINATION IN
ECE 425 – BASIC ELECTRONICS WITH MEASUREMENTS

NAME: ________________________________________ SCORE: _______________


SR CODE / SECTION: ______________________________ DATE: ________________

I. True or False. Write TRUE if the statement is true and FALSE if otherwise; also underline the
word/s that made the statement false. Use the space provided before each number. Strictly NO
ERASURES.

____________ 1. When a transistor is forward biased, the voltage gain depends on the internal emitter
resistance and the external collector resistance.
____________ 2. Voltage gain is the ratio of input voltage to output voltage.

____________ 3. A transistor can be operated as an electronic switch in cutoff and saturation


____________ 4. In saturation, the transistor ideally behaves like an open switch between collector and
emitter.
____________ 5. The base region is very thin and lightly doped compared to the collector and emitter regions.
____________ 6. There is no variation in βDC over temperature and also from one transistor to another of the
same type.
_____________7. The heavily doped n-type emitter region has a very high density of conduction-band (free)
electrons.
____________ 8. These free electrons easily diffuse through the forward-based BE junction into the lightly
doped and very thin p-type base region.
____________ 9. Most of the free electrons that have entered the base do not recombine with holes because
the base is very thin.
____________ 10. The collector current is slightly greater than the emitter current because of the small base
current that splits off from the total current injected into the base region from the emitter.
____________ 11. The arrow on the collector inside the transistor symbols points in the direction of conventional
current.
____________ 12. Typical values of βDC range from less than 20 to 200 or higher.

____________ 13. Typically, values of αDC range from 0.95 to 0.99 or greater, but αDC is always less than 1.

____________ 14. Improper biasing can cause distortion in the input signal.
____________ 15. Ic is very small compared to IB and IE.

II. Identification. Strictly NO ERASURES.

____________ 1. It is constructed with three doped semiconductor regions separated by two pn junctions.
____________ 2. Refers to the use of both holes and electrons as current carriers in the transistor structure.

____________ 3. A voltage divider in which the base current is small compared to the current in R2.

____________ 4. A method of biasing is common in switching circuits.


____________ 5. The ratio of dc collector current to dc base current in a BJT; current gain from base to
collector.
____________ 6. The state of a BJT in which the collector current has reached a maximum and is
independent of the base current.
____________ 7. The largest of the three semiconductor regions of a BJT.

____________ 8. The ratio of the dc collector current (IC) to the dc emitter current (IE).

____________ 9. It provides excellent bias stability in spite of changes in or temperature.

____________ 10. The amount by which an electrical signal is increased or amplified.

____________ 11. The most heavily doped of the three semiconductor regions of a BJT.

____________ 12. The non-conducting state of a transistor.


____________ 13. The process of linearly increasing the amplitude of an electrical signal and is one of the
major properties of a transistor.
____________ 14. An all-inclusive term for the application of dc voltages to establish a fixed level of current
and voltage.
____________ 15. A fixed point in the transistor characteristics.

III. Multiple Choice. Write the letter of your answer on the space provided before each number.
STRICTLY NO ERASURES.

1. The three terminals of a bipolar junction transistor are called


a. p, n, p
b. n, p, n
c. input, output, ground
d. base, emitter, collector

2. In a pnp transistor, the p regions are


a. base and emitter
b. base and collector
c. emitter and collector d. base only

3. For operation as an amplifier, the base of an npn transistor must be


a. positive with respect to the emitter b. negative with respect to the emitter
c. positive with respect to the collector d. 0 V

4. The emitter current is always


a. greater than the base current b. less than the collector current
c. greater than the collector d. a and c are correct

5. The βDC. of a transistor is its


a. current gain
b. voltage gain
c. power gain
d. internal resistance

6. If IC is 50 times larger than IB, then βDC. is


a. 0.02 b. 100 c. 50 d. 500

7. The approximate voltage across the forward-biased base-emitter junction of a silicon BJT is
a. 0 V b. 0.7 V c. 0.3 V d. VBB
8. The bias condition for a transistor to be used as a linear amplifier is called
a. forward-reverse
b. forward-forward
c. reverse-reverse
d. collector bias

9. If the output of a transistor amplifier is 5 V rms and the input is 100 mV rms, the voltage gain is
a. 5 b. 500 c. 50 d. 100

10. When a lowercase r’ is used in relation to a transistor, it refers to


a. a low resistance b. a wire resistance
c. an internal ac resistance d. a source resistance

11. In a given transistor amplifier, RC = 2.2 kΩ and r’e = 20 kΩ, the voltage gain is
a. 2.2 b. 110 c. 20 d. 44

12. When operated in cutoff and saturation, the transistor acts like a
a. linear amplifier
b. switch
c. variable capacitor
d. variable resistor

13. In cutoff, VCE is


a. 0 V
b. minimum
c. maximum
d. equal to VCC

14. In saturation, VCE is


a. 0.7 V b. equal to VCC c. minimum d. maximum

15. To saturate a BJT,


a. IB = IC(sat) b. IB > IC(sat) / βDC.
c. VCC must be at least 10 V d. the emitter must be grounded

16. Once in saturation, a further increase in base current will


a. cause the collector current to increase b. not affect the collector current
c. cause the collector current to decrease d. turn the transistor off

17. The maximum value of collector current in a biased transistor is


a. βDC.IB b. IC(sat) c. greater than IE d. IE - IB

18. Voltage-divider bias


a. cannot be independent of βDC.b. can be essentially independent of βDC.
c. is not widely used d. requires fewer components than all other methods

19. In an emitter bias circuit, RE = 2.7 kΩ and VEE = 15 V. The emitter current is
a. 5.3 mA b. 2.7 mA c. 180 mA d. cannot be determined.

20. Emitter bias is


a. essentially independent of βDC b. very dependent on βDC
c. provides a stable bias point d. answers a and c

IV. Problem Solving:


Solve the following problems completely and put your final answer inside a box.
1. Given the information appearing in the figure below, determine:
(a) IC
(b) Rc
(c) RB
(d) VCE

2. Given the information appearing in the figure below, determine:


(a) IC
(b) VE
(c) VCC
(d) VCE
(e) VB
(f) R1

3. Determine IC and VCE in the pnp emitter bias circuit of the figure below. Assume βDC = 100.

4. Determine Ic and VCE for the transistor circuit below


using the Thevenin’s Theorem.
Prepared By:

______________________________
Rodrigo Rodolfo A. Irineo Jr., ECE, CCNA
Instructor I, ECE 425

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