Shri Yashwantrao Bhonsale Education Society’s

YASHWANTRAO BHONSALE INSTITUTE OF TECHNOLOGY

(DTE CODE : 3470) (MSBTE Code : 1742)
Approved by AICTE, DTE & Affiliated to Mumbai University &MSBTE Mumbai
(NBA Accredited ME, CE, EE Diploma Programs)

Unit V Transistors Marks - 12

S. N. MSBTE Board Asked Questions Marks

BJT stands for __________

a) Bi-Junction Transfer
b) Blue Junction Transistor
c) Bipolar Junction Transistor
d) Base Junction Transistor
1.
1M

Answer: c) Bipolar Junction Transistor

Explanation: BJT stands for Bipolar Junction Transistor. It was
the first transistor to be invented. It is widely used in circuits.
 The doped region in a transistor are ________
a) Emitter and Collector
b) Emitter and Base
c) Collector and Base
d) Emitter, Collector and Base
2.
1M
Answer: d) Emitter, Collector and Base
Explanation: There are three doped regions forming two p-n
junctions between them. There are two types of transistors n-p-
n transistor and p-n-p transistor.

Which region of the transistor is highly doped?

a) Emitter
b) Base
c) Collector
d) Both Emitter and Collector
3.
1M
Answer: a) Emitter
Explanation: In a transistor, emitter is of moderate size and
heavily doped. Collector is moderately doped and larger as
compared to the emitter. Base is very thin and lightly doped.

Both the junctions in a transistor are forward biased.

a) True
b) False

4.
Answer: b)False 1M
Explanation: Emitter-base junction of the transistor is forwards
biased while the collector-base junction of the transistor is
reverse biased or vice versa depending on the condition desired
 Which junction is forward biased when transistor is used as an
amplifier?
a) Emitter-Base
b) Emitter-Collector
c) Collector-Base
d) No junction is forward biased

5.
1M
Answer: a) Emitter-Base
Explanation: For Transistor to be used as an amplifier, the
emitter-base junction is forward biased and the base-collector
region is reverse biased. This state is called an active state.

If Ie is the current entering the emitter, Ib is the current leaving

the base and Ic is the current leaving the collector in a p-n-p
transistor used for amplification, what is the relation between
Ie, Ib and Ic?
a) Ie <Ic
b) Ic <Ib
c) Ib <Ic

6. d) Ie <Ib + Ic
1M

Answer: c) Ib <Ic
Explanation: The total current entering the emitter, Ie, goes to
the base form where most of the current enters the collector
and a very small fraction of the current leaves the base. Thus,
Ib <Ic.
 In the active state, the emitter-base junction has a higher
resistance than the collector-base junction.
a) True
b) False

7.
Answer: b) False 1M

Explanation: Since the emitter-base junction is forward biased,

their resistance is lower than the collector-base junction, which
is reverse biased.

From the figure, what is βac when VCE is 10V and Ic is 4 mA?

8.
1M

a) 50
b) 100
c) 150
d) 200

Answer: c) 150
Explanation: We know, βac = ΔIc/ΔIb
Now, at VCE = 10V, we read two values of Ic from the graph.
Then, ΔIb = 10 μA, ΔIc = 1.5 mA
Therefore, βac = 1.5 mA/10 μA
= 150.
 A low input to the transistor gives __________
a) Low output
b) High Output
c) Normal Output
d) No Output
9. Answer: b) High Output 1M
Explanation: A low input to the transistor gives a high output
and a high input gives a low output. The switching circuits are
designed such a way that the transistor does not stay in the
active state.

From the output characteristics of a transistor, one cannot

calculate __________
a) IB
b) VBE
c) Ic
d) VCE
10.
1M
Answer: b) VBE
Explanation: The output characteristics graph for a transistor
gives us the relation between the collector current and the
emitter voltage. It also gives us the value of base current. But it
gives no information about the base-emitter voltage.

What is the expression for the Current Amplification factor?

a) ΔIcΔVc
b) ΔVcΔIc
c) (ΔICΔIB)VCE
d) (ΔICΔIB)VBE

11.
Answer: c) (ΔICΔIB) VCE 1M
Explanation: Amplification factor can be defined as the ratio of
the change in collector current to the change in base current at a
constant collector-emitter voltage when the transistor is in
active state. The correct expression for the amplification factor
is: (ΔICΔIB) VCE.
 A transistor has ……..

 a) one pn junction
 b) two pn junctions
 c) three pn junctions
12.  d) four pn junctions
1M

Answer: b) two pn junctions

Explanation:A transistor consists of 2 pn junctions in the series

of p-n-p or n-p-n.

The number of depletion layers in a transistor is ……..

 a) four
 b) three
 c) one
13.  d) two
1M

Answer: d) two

Explanation:Number of depletion layers in a transistor is two. A

transistor made up of two PN diodes connected back to back.

The element that has the biggest size in a transistor is ……..

 a) collector
 b) base
 c) emitter
14.  d) collector-base junction
1M

Answer: a) collector

Explanation:The collector is the biggest component in the

transistor.
 In a pnp transistor, the current carriers are ……..

 a) acceptor ions
 b) donor ions
 c) free electrons
 d) holes
15.
1M
Answer: d) holes

Explanation: In PNP transistors, in this type of

transistor, majority charge carriers are holes, and minority
charge carriers are electrons.

A transistor is a ……… operated device.

a) current

b) voltage

c) both voltage and current

16. d) none of the above 1M

 Answer: a) current
 Explanation: It is a current-driven device since the collector
current is controlled via the base current.

In an npn transistor, ------ are the minority carriers

a) free electrons
b) holes
c) donor ions
17. d) acceptor ions 1M
Answer: b) holes

Explanation:In an NPN transistor, holes are the minority

carriers and free electrons are the majority carriers.
 In a transistor, the base current is about ........ of emitter current.

a) 25%
b) 20%
c) 35%
18. d) 5%
1M

Answer: d) 5%

Explanation:The Base current is typically 1% to 5% of the

emitter or collector current for small-signal transistors.
The input impedance of a transistor is ……

 a) high
 b) low
 c) very high
19.
 d) almost zero 1M
 Answer:c) very high
 Explanation:Since the transistors have a constant current
source in the emitter circuit, the input impedance is very high.

In a transistor,

 IC = IE + IB
20.
1M
 IB = IC + IE
 IE = IC − IB
 IE = IC + IB

Answer: IE = IC + IB

Explanation:It can also be seen from the common emitter circuit

above that the emitter current Ie is the sum of the collector
current, Ic and the base current, Ib, added together so we can
also say that " Ie = Ic + Ib " for the common emitter
configuration.
 The value of α of a transistor is ……..

 a) more than 1
 b) less than 1
 c) 1
 d) none of the above
21.
Answer: less than 1 1M

Explanation:collector current is almost same as emitter current.

Hence ratio of collector to emitter current is less than unity
always. So alpha is less than unity. It's value lies between 0.9 to
0.995.

The most commonly used transistor arrangement is ……..

arrangement.

 a) common emitter
 b) common base
 c) common collector
 d) none of the above
22.
1M
Answer: a) common emitter

Explanation:The most commonly used transistor arrangement

is common emitter arrangement.
 In a BJT

a) The base region is sandwiched between emitter and collector

b) The collector is sandwiched between base and emitter
c) The emitter region is sandwiched between base and collector
D.None of the above
23.
1M
Answer: a) The base region is sandwiched between emitter and
collector

Explanation: In a BJT The base region is sandwiched between

emitter and collector

Amplifiers and oscillators using BJT, operate in ........ region

a) Inverted mode
b) Active
c) Cut off
24. d) Saturation 1M
Answer: b)Active

Explanation: BJT operate in active region to work as Amplifier

and Oscillators.

Base is always a ___ and ___ doped layer.

a) Thin, lightly
b) Thick , lightly
c) Thin , heavily
25. Answer: a) Thin, lightly 1M

Explanation: In a transistor, the base is very lightly doped as

compared to the emitter because by doing so. Base current is
high. Recombination is decreased in the base region.

For a BJT, for common base configuration the input

characteristics are represented by a plot between which of the

26. following parameters?

1M
a) VBE and IE
b) VBE and IB
 c) VCE and IC
d) VCC and IC

Answer: a) VBE and IE

Explanation: The input signal is applied between the base and

the emitter terminals. Input current flowing is the base current
and hence characteristics are represented by a plot between
VBE and IB.

In a BJT, if the collector-base junction is reverse-biased and the

base-emitter junction is forward-biased, which region is the BJT
operating in?
a) Saturation region
b) Active region
c) Cutoff region
27. d) Reverse active region
1M

Answer: b) Active region

Explanation: If the collector-base junction is reverse-biased and
the base-emitter junction is forward-biased, then the BJT
functions in the active region of the output characteristics.

In a BJT, if the collector-base junction is forward-biased and the

base-emitter junction is forward-biased, which region is the BJT
operating in?
a) Saturation region
b) Active region
c) Cutoff region
28. d) Reverse active region
1M

Answer: a) Saturation region

Explanation: If the collector-base junction and the base-emitter
junction are both forward-biased, then the BJT functions in the
saturation region of the output characteristics.
 In a BJT, if the collector-base junction and the base-emitter
junction are both reverse-biased, which region is the BJT
operating in?
a) Saturation region
b) Active region
c) Cutoff region
29. d) Reverse active region
1M

Answer: c) Cutoff region

Explanation: If the collector-base junction and the base-emitter
junction are both reverse-biased, then the BJT functions in the
cutoff region of the output characteristics.

In P-N-P transistor, base will be of

a) P material
b) N material
c) Either of the above
d) None of the above
30.
Answer:b) N material 1M

Explanation:The transistor in which one n-type material is

doped with two p-type materials such type of transistor is
known as PNP transistor.Base will be of N type material

A P-N-P transistor has

a) Only acceptor ions

b) Only donor ions
c) Two P-regions and one N-region
d) Three P-N junction
31.
1M
Answer:c)Two P-regions and one N-region

Explanation:The transistor in which one n-type material is

doped with two p-type materials such type of transistor is
known as PNP transistor.
 Which type of amplifiers exhibits the current gain
approximately equal to unity without any current amplification?
a) CE
b) CB
c) CC
d) Cascade

Answer: b) CB
32.
Explanation: In common base amplifier, input signal is applied 1M

at emitter terminal while the amplified output signal is obtained

at the collector terminal with respect to ground.
For the AC signals, the base terminal is specifically connected to
ground through the capacitor.
Even, the output resistance is very high & hence, the current
gain is approximately equal to unity. Due to this, there is no
possibility of current amplification. Consequently, the CB
amplifier exhibits high voltage gain.

The configuration in which voltage gain of transistor amplifier is

lowest is ____________
a) common collector
b) common emitter
c) common base
d) common emitter & base

33.
Answer: a) common collector 1M
Explanation: In common collector configuration (also known as
the emitter follower) because the emitter voltage follows that of
the base. Offering a high input impedance and a low output
impedance it is extensively used as a buffer. The voltage gain is
unity, even though current gain is high. The input and output
signals are in phase.
 The configuration in which current gain of transistor amplifier
is lowest is ___________
a) common collector
b) common base
c) common emitter
d) common emitter & base

34.
Answer: b) common base 1M
Explanation: In Common base configuration, the input
impedance is very low; While offering a high output impedance.
Although the voltage is high, the current gain is low and the
overall power gain is also low when compared to the other
transistor configurations available. Thus, there is no current
amplification because of unity current gain.

The configuration in which input impedance of transistor

amplifier is lowest is ___________
a) common collector
b) common emitter
c) common base
d) common emitter & base

35.
1M
Answer: c) common base
Explanation: In Common base configuration, the input
impedance is very low; While offering a high output impedance.
Although the voltage is high, the current gain is low and the
overall power gain is also low when compared to the other
transistor configurations available.

The configuration in which output impedance of transistor

amplifier is highest is ___________

36. a) common collector

1M
b) common base
c) common emitter
 d) common collector and base

Answer: b) common base

Explanation: In Common base configuration, the input
impedance is very low; While offering a high output impedance.
Although the voltage is high, the current gain is low and the
overall power gain is also low when compared to the other
transistor configurations available.

In which region a transistor acts as an open switch?

a) cut off region
b) inverted region
c) active region
d) saturated region

37. Answer: a) cut off region

1M
Explanation: In this mode, both the junctions are reverse biased.
The transistor has practically zero current because the emitter
does not emit charge carriers to the base. There is negligibility
current due to minority carriers. In this mode the transistor acts
as an open switch.

In which region a transistor acts as a closed switch?

a) cut off region
b) inverted region
c) active region
d) saturated region

38.
1M
Answer: d) saturated region
Explanation: In this mode, both the junctions are forward
biased. The negative terminal of the battery is connected to the
emitter. The collector current becomes independent of base
current. In this mode the transistor acts as a closed switch.
 The current which is helpful for LED to turn on is_________
a) emitter current
b) base current
c) collector current
d) depends on bias

39.
Answer: c) collector current 1M
Explanation: Depending on the type of load, a collector current
is induced that would turn on the motor or LED. The transistor
in the circuit is switched between cut off and saturation. The
load, for example, can be a motor or a light emitting diode or
any other electrical device.

Which of the following statements is true?

a) Solid state switches are applications for an AC output
b) LED’s can be driven by transistor logics
c) Only NPN transistor can be used as a switch
d) Transistor operates as a switch only in active region

40. Answer: b) LED’s can be driven by transistor logics

1M
Explanation: Output devices like LED’s only require a few
milliamps at logic level DC voltages and can therefore be driven
directly by the output of a logic gate. However, high power
devices such as motors or lamps require more power than that
supplied by an ordinary logic gate so transistor switches are
used.

The base emitter voltage in a cut off region is_________

a) greater than 0.7V
b) equal to 0.7V
c) less than 0.7V
41.
d) cannot be predicted 1M

Answer: c) less than 0.7V

 Explanation: From the cut off characteristics, the base emitter
voltage (VBE) in a cut off region is less than 0.7V. The cut off
region can be considered as ‘off mode’. Here, VBE > 0.7 and IC=0.
For a PNP transistor, the emitter potential must be negative
with respect to the base

In saturation region, the depletion layer_________

a) increases linearly with carrier concentration
b) decreases linearly with carrier concentration
c) increases by increasing the emitter current
d) decreases by decreasing the emitter voltage drop

Answer: d) decreases by decreasing the emitter voltage drop

42.
1M
Explanation: Here, the transistor will be biased so that
maximum amount of base current is applied, resulting in
maximum collector current resulting in minimum emitter
voltage drop which results in depletion layer as small as
possible and maximum current flows through the transistor.

The base emitter voltage in a saturation region is_________

a) greater than 0.7V
b) equal to 0.7V
c) less than 0.7V
d) cannot be predicted

Answer: d) cannot be predicted

43.
Explanation: From the saturation mode characteristics, the 1M
transistor acts as a single pole single throw solid state switch. A
zero collector current flows. With a positive signal applied to the
base of transistor it turns on like a closed switch.
 The switching of power with a PNP transistor is called_________
a) sourcing current
b) sinking current
c) forward sourcing
d) reverse sinking

44.
1M
Answer: a) sourcing current
Explanation: Sometimes DC current gain of a bipolar transistor
is too low to directly switch the load current or voltage, so
multiple switching transistors is used. The load is connected to
ground and the transistor switches the power to it.

The switching of power with a NPN transistor is called_________

a) sourcing current
b) sinking current
c) forward sourcing
d) reverse sinking

45.
1M
Answer: b) sinking current
Explanation: Sometimes DC current gain of a bipolar transistor
is too low to directly switch the load current or voltage, so
multiple switching transistors is used. The load is connected to
supply and the transistor switches the power to it.

Which of the following is not a part of a BJT?

a) Base
b) Collector
c) Emitter
d) None of the mentioned
46.
1M

Answer: d) None of the mentioned

Explanation: BJT consists of three semiconductor regions, base
region, emitter region and collector region.
 In which of the following modes can a BJT be used?
a) Cut-off mode
b) Active mode
c) Saturation mode
47.
1M
d) All of the mentioned

Answer: d) All of the mentioned

Explanation: These three are the defined regions in which a BJT
operates.

If a BJT is to be used as a switch, it must operate in____________

a) Cut-off mode or active mode
b) Active Mode or saturation mode
c) Cut-off mode or saturation mode
d) Cut-off mode or saturation mode or active mode
48.
1M

Answer: c) Cut-off mode or saturation mode

Explanation: A BJT operates as an amplifiers in active mode and
as a switch in cut-off or saturation mode.

In cut off mode

a) The base-emitter junction is forward biased and emitter-
collector junction is reversed biased
b) The base-emitter junction is forward biased and emitter-
collector junction is forward biased
c) The base-emitter junction is reversed biased and emitter-
collector junction is reversed biased
49. d) The base-emitter junction is reversed biased and emitter- 1M
collector junction is forward biased
Answer: c) The base-emitter junction is reversed biased and
emitter-collector junction is reversed biased
Explanation: In cut-off mode there is no current flowing through
the BJT hence both junctions must be reversed biased else if
either of them is forward biased then the current will flow.
 On which of the following does the collector current not
depends upon?
a) Saturation current
b) Thermal voltage
c) Voltage difference between the base and emitter
d) None of the mentioned
50.
1M

Answer: d) None of the mentioned

Explanation: Collector current depends linearly of the
saturation current and exponentially to the ratio of the voltage
difference between the base and collector and thermal voltage.

Where is the input measured in a common base transistor

physical model?
a) Collector terminal
b) Emitter terminal
c) Base terminal
d) Ground
5.1
1M
Answer: b) Emitter terminal
Explanation: In the physical model of a common base transistor
amplifier the input is measured at the emitter terminal of the
BJT biased device. Whereas, the output is measured across the
collector terminal of the biased BJT device.

Which parameter of the physical model is varied while

measuring the input characteristics of a common-base
transistor?
a) Emitter current

52. b) Emitter voltage

1M
c) Collector current
d) Emitter base voltage
Answer: d) Emitter base voltage
 Explanation: To determine the input characteristics, the
collector-base voltage is kept constant at zero volts and the
emitter base voltage is increased from zero volts to different
voltage levels. For each voltage level of the input voltage, the
input current is recorded.

Where is the output measured in a common base transistor

physical model?
a) Collector terminal
b) Emitter terminal
c) Base terminal
d) Ground

1M
Answer: a) Collector terminal
Explanation: In the physical model of a common base transistor
amplifier the output is measured at the collector terminal of the
BJT biased device. Whereas, the input is measured across the
emitter terminal of the biased BJT device.

Which parameter of the physical model is varied while

measuring the output characteristics of a common-base
transistor?
a) Emitter current
b) Emitter voltage
c) Collector current
d) Collector base voltage

53.
1M
Answer: d) Collector base voltage
Explanation: To determine the output characteristics, the
emitter current is kept constant at zero and the collector base
voltage is increased from zero volts to varying voltage levels.
For each voltage level of the output voltage, the collector
current is recorded.
 How do you calculate the dynamic input resistance of a CB
transistor?
a) ΔVBE / ΔIC
b) ΔVBE / ΔIE
c) ΔVCB / ΔIC
d) ΔVCB / ΔIE
54.
1M

Answer: b) ΔVBE / ΔIE

Explanation: Dynamic input resistance is defined as the ratio of
change in emitter base voltage to the corresponding change in
the emitter current. While the collector voltage is kept at a
constant value. Therefore, ri = ΔVBE / ΔIE.

A bipolar junction transistor has beta=250 and base

current=10micro ampere. What is the collector current?
a) 25 micro ampere
b) 10 micro ampere
c) 2.5 milli ampere
d) 10 milli ampere

55.
1M
Answer: c) 2.5 milli ampere
Explanation: Given:
Base current(Ib)=10micro ampere
Beta=250
Since Ic(collector current)=beta*Ib(base current)
Ic(collector current)=250*10 micro ampere=2.5 milli ampere.

What happens to the collector current if the emitter current

increases while no base voltage is applied?
a) Increases
56.
b) Decreases 1M
c) No current
d) First increases then decreases
 Answer: c) No current
Explanation: When no voltage is provided at the base then no
current passes from emitter to collector, so even if very high
potential difference is applied at the emitter collector junction,
no current flows through it. This configuration is used for
switching in various appliances using bipolar junction
transistor.

Which is an example of bipolar junction transistor?

a) BC547B
b) CMCP793V-500
c) SLB700A/06VA
d) MBR5H100MFST1G

57.
Answer: a) BC547B 1M

Explanation: BC547B is an example of bipolar junction

transistor. It is most common and widely used NPN transistor. It
is small, cheap, uses less power and fulfills most of the
requirement for general purpose use.

In bipolar junction transistors both electron and holes are

responsible for conduction.
a) True
b) False

58. Answer: a) True

1M
Explanation: In bipolar junction transistors both electron and
holes are responsible for conduction. The term “bipolar” itself
mean two polarities which represents that both charged particle
are responsible for the conduction in the bipolar junction
transistor.
 Three PN junctions is present in a bipolar junction transistor.
a) True
b) False

59. Answer: b) False 1M

Explanation: A bipolar junction transistor has 2 PN junctions.

First PN junction is between the base emitter terminal and
second PN junction is between base collector terminals. A base
is always between emitter and collector.

What is the minimum voltage required to make base emitter

junction of a real silicon bipolar junction transistor in forward
biased?
a) 0.7 volts
b) 1.8 volts
c) 2.3 volts
d) 0.3 volts
60.
1M
Answer: a) 0.7 volts
Explanation: 0.7 volts is the minimum voltage required to make
the base emitter junction of a real silicon bipolar junction
transistor in forward biased. This 0.7 volt potential difference
between base and emitter terminal makes the PN junction in
forward biased.

What are the parameters over which transfer characteristics

curve of bipolar junction transistor is made in common emitter
configuration?

61. a) Emitter Current and time

1M
b) Emitter Voltage and time
c) Collector Current and frequency
d) Collector to Emitter Voltage and Collector current
 Answer: d) Collector to Emitter Voltage and Collector current

Explanation: Collector to Emitter Voltage and Collector current

are the parameters considering which transfer characteristics
curve of bipolar junction transistor is made. It is voltage versus
current graph in which Current is denoted on Y-axis and voltage
is denoted on (X-axis).

A bipolar junction transistor has beta=100 and base current= 8

micro ampere. What is the collector current?
a) 25 micro ampere
b) 0.8 micro ampere
c) 0.8 milli ampere
d) 10 milli ampere

62.
Answer: c) 0.8 milli ampere 1M

Explanation: Given;
Base current (Ib) = 8 micro ampere
Beta=100
Since Ic(collector current)=beta*Ib(base current)
Ic(collector current)=100*8 micro ampere=0.8 milli ampere.

FET is a voltage controlled device.

a) True
b) False

Answer: a) True
63
Explanation: Field Effect Transistors are voltage controlled 1M
devices, by applying some voltage between the gate and source,
the drain current can be controlled. In order to control the
operation of FET the gate to drain voltage is varied to operate
the FET in different regions of operation.
 Which of the following statement is true about FET?
a) It has high output impedance
b) It has high input impedance
c) It has low input impedance
d) It does not offer any resistance

64
Answer: b) It has high input impedance 1M

Explanation: Because of the Sio2 insulator, doped between drain

and source at the top, the resistance offered by this is very high.
The insulator will stop the flow of electron from one part to
another which acts as an open circuit.
Comparing the size of BJT and FET, choose the correct
statement?
a) BJT is larger than the FET
b) BJT is smaller than the FET
c) Both are of same size
d) Depends on application
65
1M
Answer: a) BJT is larger than the FET

Explanation: BJT usually are built with a thickness of up to 1cm

whereas the FET uses a fabrication technique which makes its
size in mm.
What is the main advantage of FET which makes it more useful
in industrial applications?
a) Voltage controlled operation
b) Less cost
c) Small size
66
d) Semiconductor device 1M

Answer: c) Small size

Explanation: Because of its small size, the IC chips can be made

 even smaller which reduces the wear and tear. The process
technology used with process technology constant at which is
the ratio of Width and Length, the FET is made more
advantageous.
For a FET when will maximum current flows?
a) Vgs = 0V
b) Vgs = 0v and Vds >= |Vp|
c) VDS >= |Vp|

67 d) Vp = 0
1M

Answer: b
Explanation: For a FET the current reaches maximum that is
IDSS occurs when Vgs = 0V and VDS >= |Vp|
What is the value of current when the gate to source voltage is
less than the pinch off voltage?
a) 1A
b) 5A
c) 100A

67 d) 0
1M

Answer: d) 0
Explanation: When the gate to source voltage is less than pinch
off, both of the junctions will be reverse biased and hence no
current flows.
What is the value of drain current when Vgs=pinch off voltage?
a) 0A
b) 1A
c) 2A
d) Cannot be determined
68
1M
Answer: a) 0A
Explanation: ID = IDSS (1-Vgs/Vp) 2
If Vgs = Vp,then
ID = IDSS (1-1)=0.
 To use FET as a voltage controlled resistor, in which region it
should operate?
a) Ohmic region
b) cut off
c) Saturation
69
d) cut off and saturation 1M

Answer: a) Ohmic region

Explanation: By varying the gate to source voltage, Resistance
can be varied as follows rd = ro/(1-Vgs/Vp)2
For an n-channel FET, What is the direction of current flow?
a) Source to drain
b) Drain to source
c) Gate to source

70 d) Gate to drain
1M

Answer: b) Drain to source

Explanation: When a voltage greater than pinch off is applied,
the current starts flowing from Drain to source.
For a p-channel FET, What is the direction of current flow?
a) Source to drain
b) Drain to source
c) Gate to source
d) Gate to drain

Answer: a) Source to drain

70 Explanation: When the voltage is lesser than pinch off, the

1M
current flows from Source to Drain.
The forward bias drain and gate is the reason for the flow of
electron from Drain to source, as the conventional current flows
opposite to the electron flow, the current will flow from Source
to Drain.
 Field effect transistors are known as
a) unipolar device
b) bipolar device

71 c) tripolar device
1M
d) multipolar device

Answer: a) unipolar device

Explanation: Field effect transistors are unipolar transistors as
they involve single-carrier-type operation.
Field effect transistor’s conductivity is regulated by
a) input current
b) output current
c) terminal voltage
d) supply voltage
78 1M
Answer: c) terminal voltage
Explanation: Field effect transistor’s conductivity is regulated by
the voltage applied to a terminal (the gate) which is insulated
from the device.
In FET, the current enters the channel through
a) source
b) drain
c) gate
d) nodes

Answer: a) source
79 1M
Explanation: In field effect transistor, the current enters the
channel through source and the current leaves the junction
through drain.
 Which terminal bias the transistor to operation?
a) source
b) drain
c) gate
d) base
80 1M
Answer: d) Base
Explanation: Other than the three terminals, source drain and
gate, there is a fourth terminal called as body or base. This is
used to bias the transistor to operation.
In FET, the width is greater than the length of the gate.
a) true
b) false

Answer: a) true
81 1M
Explanation: In FET, the width is greater than the length of the
gate. Length gives the distance between source and drain. Width
is the extension of the transistor, in the direction perpendicular
to cross section.
Which terminal controls the electron flow passage?
a) source
b) drain
c) gate
d) base
82 1M
Answer: c) gate
Explanation: Gate permits the electron to flow through or block
their passage by creating or eliminating the channel between
source and drain.
The expansion of depletion region in n-channel device makes
the channel
a) narrow
83 1M
b) wide
c) does not affect the channel
 d) cannot be determined

Answer: a) narrow
Explanation: In n-channel depletion mode device, as the
depletion region width expands, it encroaches the channel from
the sides and the channel becomes narrow.
Which voltage increases the channel size?
a) negative Vgs
b) positive Vgs
c) negative Vds
d) positive Vds
84 1M

Answer: b) positive Vgs

Explanation: A positive gate to source voltage increases the
channel size and allows the electrons to flow easily.
Which mode of operation of FET is used, when amplification is
needed?
a) active
b) saturation
c) non saturation
85 d) linear 1M

Answer: b) saturation
Explanation: Saturation mode, which is in between the ohmic
and saturation region is used when amplification is needed.
Which of the following relation is true about gate current?
a) IG=ID+IS
b) ID=IG
c) IS= IG
d) IG=0
86 1M
Answer: d) IG=0
Explanation: The FET physical structure which contains silicon
dioxide provides infinite resistance. Hence no current will flow
through the gate terminal.
 For a fixed bias circuit the drain current was 1mA, what is the
value of source current?
a) 0mA
b) 1mA
c) 2mA
87 d) 3mA 1M
Answer: c) 2mA
Explanation: We know that for an FET same current flows
through the gate and source terminal, Hence source
current=1mA.
For a fixed bias circuit the drain current was 1mA, VDD=12V,
determine drain resistance required if VDS=10V?
a) 1KΩ
b) 1.5KΩ
c) 2KΩ
d) 4KΩ
88 1M

Answer: c) 2KΩ
Explanation: VDS=VDD-ID RD
=>10=12-RD×1mA
=>RD=2/1mA=2 KΩ.
Field effect transistors are different from BJTs in that they are
_________
a) monopolar devices
b) bipolar devices
c) bidirectional device
d) none of the mentioned

89 1M
Answer: a) monopolar devices
Explanation: FETs are called monopolar devices, with only one
carrier type, either electrons or holes providing current flow
through the device. N-channel FETs employ electrons while p-
channel FETs employ holes as source of current.
 JFET is a_______ carrier device.
a) Unipolar
b) Bipolar
c) Minority
d) Majority
90 1M
Answer: d) Majority
Explanation: The current flow in the device is due to majority
carriers. In an n-type JFET, it is due to the electrons and in a p-
type JFET- it is due to the holes.
he n-channel JFET, the pinch off voltage is ______________
a) not greater than 0
b) greater than or equal to 0
c) less than or equal to 0
d) not less than 0

91 Answer: a) not greater than 0 1M

Explanation: The pinch off voltage for an N-channel JFET is
negative. The depletion region would extend into the N-channel
if the reverse bias in the gate to source voltage increases which
means that the gate to source voltage has to be negative since
the gate is N-type.
An N-channel JFET is ___________
a) Always ON
b) Always OFF
c) Enhancement mode JFET
d) Has a p-type substrate

Answer: a) Always ON
92 1M
Explanation: An N-channel is always ON depletion mode JFET
since the channel for current flow from source to drain is always
present. This is in contrast to a P-channel JFET which needs to
be provided with a channel for the flow of current.
 A JFET has three terminals, namely …………
a) cathode, anode, grid
b) emitter, base, collector
c) source, gate, drain
93 d) none of the above 1M
Answer : c) source, gate, drain
Explanation:A JFET has three terminals, namelysource, gate,
drain
The gate of a JFET is ............. biased
a) reverse
b) forward
c) reverse as well as forward
d) none of the above
94 1M
Answer : a) reverse
Explanation:Gate source p-n junction is always reverse biased
because if it is forward then all the channel current will flow to
the Gate and not to the source, ultimately damaging JFET.
A common base configuration of a pnp transistor is analogous to
………… of a JFET
a) common source configuration
b) common drain configuration
c) common gate configuration
95 d) none of the above 1M

Answer : c) common gate configuration

Explanation: A common base configuration of a pnp transistor is
analogous to common gate configuration of a JFET
In a JFET, when drain voltage is equal to pinch-off voltage, the
depletion layers ………
a) almost touch each other
96 b) have large gap 1M
c) have moderate gap
d) none of the above
 Answer : a) almost touch each other
Explanation:when drain voltage is equal to pinch-off voltage, the
depletion layers almost touch each other
In a JFET, IDSS is known as …………..
a) drain to source current
b) drain to source current with gate shorted
c) drain to source current with gate open
d) none of the above

97 1M
Answer : b) drain to source current with gate shorted
Explanation:IDSS is referred to as the drain current for zero
bias, because the gate-source voltage requires no bias voltage to
operate. The gate-source voltage is just zero. No voltage needs to
be applied to it
A JFET has high input impedance because ___________
a) it is made of semiconductor material
b) input is reverse biased
c) of impurity atoms
d) none of the above
98 1M

Answer: b) input is reverse biased

Explanation:A JFET has high input impedance becauseinput is
reverse biased
JFET in properly biased condition acts as a
a) current controlled current source
b) voltage controlled voltage source
c) voltage controlled current source
d) impedance controlled current source
99 1M
Answer: c) voltage controlled current source
Explanation:JFET in properly biased condition acts as avoltage
controlled current source
 The input resistance of a FET is of the order of
a) 100 Ω
b) 10 kΩ
c) 1 MΩ
d) 100 MΩ 1M

100
Answer: d) 100 MΩ
Explanation:The input resistance of a FET is typically very high,
on the order of mega ohms (MΩ).
FET is which type of device?
a) 4 terminal voltage controlled device
b) 3 terminal voltage controlled device
c) 3 terminal current controlled device
d) 2 terminal current controlled device

Answer:b) 3 terminal voltage controlled device

Explanation:FET is a voltage-driven/controlled device, i.e. the
output current is controlled by the electric field applied& it is
three terminal device.
In which mode the JFET can operate?
a) depletion-mode only
b) enhancement-mode only
c) saturation mode only
d) noise mode only

Answer : a) depletion-mode only

Explanation:Unlike MOSFETs (metal-oxide-semiconductor field-
effect transistors), JFETs are predominantly depletion-mode
devices, meaning they are normally on and require a gate-
source voltage to turn them off. The physical structure and
doping of JFETs make it difficult to achieve enhancement mode
operation.
The most common semiconductor used for manufacturing of
 FET is
a) Gallium Arsenide
b) Indium Arsenide
c) Indium Gallium Arsenide
d) Silicon

Answer:-d
Explanation:Usually the semiconductor of choice is silicon. Some
chip manufacturers, most notably IBM and Intel, use an alloy of
silicon and germanium (SiGe) in MOSFET ...