001.

The order of doping regions in npn transistor C

A E>B>C B C>B>E
C E>C>B D C>E>B
002. In a transistor, the base current is about .. of emitter current D
A 25% B 20%
C 35 % D 5%
003. At the base-emitter junctions of a transistor, one finds C
A a reverse bias B a wide depletion layer
C low resistance D none of the above
004. IC = αIE + . C
A IB B ICEO
C ICBO D βIB
005. In NPN BJT transistor which of the following terminal defines P-type? D
A Emitter B Collector
C Drain D Base
006. BJT is a ________________ device B
A Voltage controlled B Current controlled
C Frequency controlled D Power controlled
007. Which of the following are the charge carriers available in BJT? D
A Electrons B Neutrons
C Holes D Both electrons and holes
008. Which of the following BJT terminal controls the current flow? A
A Base B Emitter
C Collector D Gate
009. For silicon transistor what is the base-emitter voltage? B
A 0.3 V B 0.7 V
C 0V D 1V
010. The collector supply voltage for a CE configured transistor is 10V. The resistance RL=800Ω. The A
voltage drop across RLis 0.8V. Find the value of collector emitter voltage.
A 9.2V B 3.7V
C 6.5V D 9.8V
011. The range of β is _________ D
A 50 to 300 B 30 to 400
C 10 to 20 D 20 to 500
012. As the temperature of a transistor goes up, the base-emitter resistance A
A decreases B increases
C remains the same D none of the above
013. If a BJT is to be used as an amplifier, then it must operate in___________ B
A Cut-off mode B Active mode
C Saturation mode D All of the mentioned
014. On which of the following does the scale current not depends upon? D
A Effective width of the base B Charge of an electron
C Electron diffusivity D Volume of the base-emitter junction
015. The input impedance of a transistor connected in .. arrangement is the highest B
A common emitter B common collector
C common base D none of the above
016. The phase difference between the input and output voltages in a common base arrangement is . D
A 180o B 90o
C 270o D 0o
017. Which of the following condition is true for cut-off mode? A
A The output current Is zero B The output current is proportional to the
input current
C The input current is zero D The output current is inversely
proportional to the input current
018. Which of the following is true for the active region of an npn transistor? B
A The potential difference between the B The collector current is directly
emitter and the collector is greater than proportional to the base current
0.4 V
C The collector current is inversely D The output current Is zero
proportional to the base current
019. The potential difference between the base and the collector Vcb in a pnp transistor in saturation C
region is ________
A -0.2 V B 0.2 V
C -0.5V D 0.5 V
020. Identify the true statement to operate pnp transistor in active region? A
A CB junction is reversed bias and the EB B CB junction is forward bias and the EB
junction is forward bias junction is forward bias
C CB junction is forward bias and the EB D CB junction is reversed bias and the EB
junction is reverse bias junction is reverse bias
021. A transistor is connected in CB mode. If it is not connected in CE mode with same bias voltages, B
the values of IE, IB and IC will ..
A increase B remain the same
C decrease D doubles
022. The curve between the collector current versus the potential difference between the base and C
emitter is
A A straight line inclined to the axes B A straight line parallel to the x-axis
C An exponentially varying curve D A parabolic curve
023. The ideal voltage gain of a transistor connected in common collector arrangement is .. A
A equal to 1 B more than 10
C more than 100 D less than 1
024. ICEO = () ICBO C
A β B 1+α
C 1+β D α
025. A germanium transistor with α=0.98 gives a reverse saturation current ICBO=10 A in a CB C
configuration. When it is used in CE configuration with a base current of 0.22 A, calculate the
collector current.
A 0.9867mA B 0.7654mA
C 0.51078mA D 0.23456mA
026. In ICEO, wt does the subscript CEO mean? C
A collector to base emitter open B emitter to base collector open
C collector to emitter base open D emitter to collector base open
027. The magnitude of the thermal voltage is given by B
A k/Tq B kT/q
C q/Kt D Tk/q
028. The correct expression relating the emitter current Ie to the collector current Ic is B
A Ie = α Ic B Ic = α Ie
C Ie = Ic D Ic = Ie
029. The emitter current IEin a transistor is 3mA. If the leakage current ICBO is 5 A and α=0.98, C
calculate the collector and base current.
A 3.64mA and 55 A B 3.64mA and 33 A
C 2.945mA and 55 A D 5.89mA and 33 A
030. The relation between α and β is _________ A
A α= β/(1+β) B β=α/(1-α)
C β=α/(1+α) D α= β/(1- β)
031. The AC current gain in a common base configuration is_________ D
A -∆IC/∆IE B ∆IE/∆IC
C -∆IE/∆IC D ∆IC/∆IE
032. A transistor has an ICof 100mA and IBof 0.5mA. What is the value of αdc? B
A 0.787 B 0.995
C 0.543 D 0.659
033. In a transistor, collector current is controlled by .. B
A collector voltage B base current
C collector resistance D all of the above
034. The element that has the biggest size in a transistor is .. A
A collector B base
C emitter D collector-base-junction
035. In a transistor .. D
A IC = IE + IB B IB = IC + IE
C IE = IC - IB D IE = IC + IB
036. The most commonly used transistor arrangement is arrangement A
A common emitter B common base
C common collector D none of the above
037. In a transistor, signal is transferred from a circuit B
A high resistance to low resistance B low resistance to high resistance
C high resistance to high resistance D low resistance to low resistance
038. A collector characteristic curve is a graph showing .. B
A emitter current (IE) versus collector- B collector current (IC) versus collector-
emitter voltage (VCE) with (VBB) base emitter voltage (VCE) with (VBB) base
bias voltage held constant bias voltage held constant
C collector current (IC) versus collector- D collector current (IC) versus collector-
emitter voltage (VC) with (VBB) base emitter voltage (VCC) with (VBB) base
bias voltage held constant bias voltage held constant
039. The Early Effect is also called as A
A Base-width modulation effect B Base-width amplification effect
C Base-width un amplification effect D Base-width demodulation effect
040. Collector current (Ic) reaches zero when D
A Vt = Vce ln (Isc/I) B Vce = Vt ln (I/Isc)
C Vce = Vt ln (Isc + I/I) D Vce = Vt ln (Isc/I)
041. The process of linearly increasing the amplitude of electrical signal is called B
A Attenuation B Amplification
C Modulation D Conversion
042. The early effect in bipolar junction transistor is caused by C
A Fast turn ON B Fast turn OFF
C Large base - collector reverse bias D Large base - emitter forward bias
043. In which of the following modes can a BJT be used? D
A Cut-off mode B Active mode
C Saturation mode D All of the mentioned
044. When BJT is operated in active region and EB junction potential is increasing, the width of B
corresponding depletion region ----------------------
A Increases B Decreases
C Remains same D disappears
045. If a 2 mV signal produces a 2 V output, estimate the voltage gain. D
A 0.001 B 0.004
C 100 D 1000
046. VCEapproximately equals ________ when a transistor switch is cut off. A
A Vcc B 0.2V
C 0.3V D 0V
047. When transistors are used in digital circuits they usually operate in the . C
A active region B breakdown region
C saturation and cutoff regions D linear region
048. A transistor may be used as a switching device or as a . D
A fixed resistor B tuning device
C rectifier D variable resistor
049. An N-channel MOSFET, the source and drain region has to be doped with A
A n-type material B p-type material
C source with p-type and drain withn-type D source with n-type and drain withp-type
material material
050. A D-MOSFET typically operate in C
A The depletion mode only. B The enhancement mode only.
C The both depletion & enhancementmode. D The small impedance mode.
051. Inversion layer in an MOS circuit is formed by D
A doping B impact ionization
C tunneling D electric field
052. The function of the SiO2layer in MOSFET is to provide A
A isolation B coupling
C conduction D amplification
053. The Transistor is connected in Common collector configuration has A
A highinput & low output resistance B lowinput & high output resistance
C lowinput & low output resistance D highinput & high output resistance
054. BJT is a _____________ device A
A Bipolar B Unipolar
C tripolar D thyristor
055. In a good bipolar transistor operating in the active region, what is the spatial profile of minority D
carriers in the base?
A Exponentially increasing from emitter to B Exponentially decreasing from emitter to
collector. collector
C Linearly increasing from emitter to D Linearly decreasing from emitter to
collector. collector.
056. With the E-MOSFET, when gate input voltage is zero, drain current is? B
 A at saturation B zero
C widening the channel D IDSS
057. Which of the following current equations is true? C
A IG = I D B IG = IS
C ID = I S D IG = ID = IS
058. For the FET, the relationship between the input and output quantities is _______ due to the C
_______ term in Shockleys equation.
A nonlinear, cubed B linear, proportional
C nonlinear, squared D linear, squared
059. A very simple bias for a D-MOSFET is called? C
A self biasing B gate biasing
C zero biasing D voltage-divider biasing
060. Consider the following statements for a metal oxide semiconductor field effect transistor C
(MOSFET): P: As channel length reduces, OFF-state current increases. Q: As channel length
reduces, output resistance increases. R: As channel length reduces, threshold voltage remains
constant. S: As channel length reduces, ON current increases. Which of the above statements are
INCORRECT?
A P and Q B P and S
C Q and R D R and S
061. Which one of the following is not a voltage controlled circuit? C
A MOSFET B IGBT
C BJT D JFET
062. Maximum no electrons in the base region of an NPN transistor will not recombine for reason A
being
A Have a long lifetime B Have a negative charge
C Must flow a long way through thebase D Flow out of the base
063. When plotting the transfer characteristics, choosing VGS = 0.5VP will result in a drain current B
level of _______ IDSS.
A 0 B 0.25
C 0.5 D 1
064. The slope of the dc load line in a self-bias configuration is controlled by _______. D
A VDD B RD
C RG D RS
065. For _______, Shockleys equation is applied to relate the input and the output quantities. D
A JFETs B depletion-type MOSFETs
C enhancement-type MOSFETs D JFETs and depletion-type MOSFETs
066. Which of the following is (are) true of a self-bias configuration compared to a fixed-bias D
configuration?
A One of the dc supplies is eliminated. B A resistor RS is added.
C VGS is a function of the output current D All of the above
ID.
067. Which of the following describe(s) the difference(s) between JFETs and depletion-type D
MOSFETs?
A VGS can be positive or negative for the B ID can exceed IDSS for the depletion-type.
depletion-type.
C The depletion-type can operate in the D All of the above
enhancement mode.
068. A

Calculate the value of VDSQ.

A 40V B 30V
C 20V D 0V
069. Given the values of VDQ and IDQ for this circuit, determine the required values of RD and RS. C

A 2 kΩ, 2 kΩ B 1 kΩ, 5.3 kΩ

C 3.2 kΩ, 400 Ω D 2.5 kΩ, 5.3 kΩ
070. The operation of a JFET involves D
A A flow of minority carriers B Negative resistance
C Recombination D A flow of majority carriers
071. JFET has........ degree of isolation between input and output B
A Low B High
C Moderate D zero
072. A JFET is a driven device C
A current B voltage
C both current and voltage D none of the above
073. In an enhancement-type MOSFET, the drain current is zero for levels of VGS less than the A
_______ level.
A VGS(Th) B VGS(off)
C VP D VDD
074. To bias a e-MOSFET ___________ A
A we can use either gate bias or a voltage B we can use either gate bias or a self bias
divider bias circuit circuit
C we can use either self bias or a voltage D we can use any type of bias circuit
divider bias circuit
075. When drain voltage equals the pinch-off-voltage, then drain current . with the increase in drain C
voltage
A decreases B increases
C remains constant D none of the above
076. The input gate current of a FET is D
A A few micro-amperes B A few mili-amperes
C A few amperes D Negligible
077. A JFET can operate in A
A Only depletion mode B Only enhancement mode
C Both depletion and enhancement modes D Neither depletion nor enhancement modes
078. When a JFET is pinched off, the depletion layers are B
A Conducting B Close together
C Touching D Far apart
079. For a p channel MOSFET which of the following is not true? B
A The source and drain are a p type B The induced channel is p type region
semiconductor which is induced by applying a positive
potential to the gate
C The substrate is a n type semiconductor D Substrate is shorted to source terminal
080. In applications where ............ input resistance is needed, the JFET is preferred to the bipolar D
transistor
A Low B Very low
C Zero D High
081. For NMOS transistor which of the following is not true? C
A The substrate is of p-type semiconductor B Inversion layer or induced channel is of n
type
C Threshold voltage is negative D None of the mentioned
082. The process trans conductance parameter is directly proportional to D
A Electron mobility only B Electron mobility)-1only
C Oxide capacitance only D Product of oxide capacitance and electron
mobility
083. The name field effect is related to the ....... layers of a JFET A
A Depletion B Gate
C Source D Drain
084. As compared to a bipolar transistor, a JFET is C
A Equally sensitive to changes in input B More sensitive changes in input voltage
voltage
C Less sensitive changes in input voltage D Highly sensitive to changes in input
voltage
085. The JFETs are normally used as current sources in ---------- region B
A Cut-off B Saturation
C Ohmic D linear
086. Whenever a JFET operates above pinch-off voltage D
A Drain current starts decreasing B Drain current increases steeply
C Depletion regions become smaller D Drain current remains nearly constant
087. The drain current of the N-channel JFET increases with A
A .Increasing positive voltage at the gate B Constant voltage at the gate
C Decreasing positive voltage at the gate D None of the above
088. The JFET is a A
A Unipolar device B Tripolar device
C Bipolar device D None of the above
089. The input impedance of an ideal JFET C
A Is impossible to predict B Approaches unity
C Approaches infinity D Approaches zero
090. The MOSFET is almost ideal as switching device because C
A It has longer life B It works progressively
 C It consumes low power D It has linear characteristics
091. The MOSFET also called as ------------ D
A EMOSFET B JFET
C DMOSFET D IGFET
092. In MOSFETs N-channel is more preferred than P-channel because B
A It is cheaper B It is faster
C It has better drive capability D It has better noise immunity
093. The JFET is also known as square law device because its A
A Drain current varies as square of the gate B Trans conductance curve is parabolic
source voltage
C Reverse gate leakage current varies as D Drain current varies as square of its drain
square of reverse gate voltage voltage for a fixed Vgs
094. The enhancement N-channel MOSFET D
A Can be operated as an enhancement B bias to gate Can be operated as a JFET
MOSFET by applying -ve with zero gate voltage
C Can be operated as an enhancement D Cannot be operated as an enhancement
MOSFET by applying +ve bias to gate MOSFET
095. The MOSFET stands for C
A Metal oxidized selenium FET B Metal oxide surface FET
C Metal oxide semiconductor FET D Metal of surface FET
096. The enhancement MOSFET is A
A Normally off device B Useful as a very good constant voltage
source
C Widely used because of easy in its D Normally on device
fabrication
097. What is the typical range of turn-off times for SCRs? A
A 5 s to 30 s B 1 s to 5 s
C 0.1 s to 1 s D D. 0.01 s to 0.1 s
098. What is the maximum current (rms) rating for commercially available LASCRs today? C
A 13 A B 15 A
C 3A D 25 A
099. Which of the following transistors is an SCR composed of? A
A npn, pnp B npn, npn
C pnp, pnp D none of these
100. How many layers of semiconductor materials does a silicon-controlled rectifier (SCR) have? C
A 2 B 3
C 4 D 5
101. Which of the following devices has (have) four layers of semiconductor materials? D
A Silicon-controlled switch (SCS) B Gate turn-off switch (GTO)
C Light-activated silicon-controlled rectifier D D. All of the above
(LASCR)
102. What is the frequency range of application of SCRs? B
A About 10 kHz B About 50 kHz
C About 250 kHz D About 1 mHz
103. Which one of the SCR terminals fires the SCR? C
A Anode B Cathode
C Gate D All of the above
104. An SCR is turned off by . A
 A Reducing anode voltage to zero B Reducing gate voltage to zero
C Reverse biasing the gate D None of the above
105. In an SCR circuit the supply voltage is generally .. that of break over voltage B
A Equal to B Less than
C Greater than D double
106. An SCR combines the features of .. B
A A rectifier and resistance B A rectifier and transistor
C A rectifier and capacitor D None of the above
107. ______ are areas of application for SCRs. D
A Relay controls B Time-delay circuits
C Motor controls D All of the above
108. To turning OFF an SCR, it is essential to decrease current to be less than A
A trigger current B holding current
C break over current D none of these
109. An SCR behaves as a . switch A
A Unidirectional B Bidirectional
C Mechanical D magnetic
110. An SCR is sometimes called D
A Triac B Diac
C Unijunctiontransistor D Thyristor
111. The major drawback of the first generation IGBTs was that, they had D
A latch-up problems B noise & secondary breakdown problems
C sluggish operation D latch-up & secondary breakdown
problems
112. Which of the following devices has a negative-resistance region in its characteristics curve? C
A SCR B SCS
C UJT D Phototransistor
113. From the two transistor (T1 & T2) analogy of SCR, the total anode current of SCR is B
___________ in the equivalent circuit.
A the sum of both the base currents B the sum of both the collector current
C the sum of base current of T1 & collector D the sum of base current of T2 & collector
current of T2 current of T1
114. If gate current is increased, then anode-cathode voltage at which SCR closes . A
A Isdecreased B Isincreased
C Remainsthe same D None ofthe above
115. When SCR is OFF, the current in the circuit is . B
A Exactlyzero B Smallleakage current
C Large leakagecurrent D None ofthe above
116. When SCR starts conducting, then . loses all control A
A Gate B Cathode
C Anode D None ofthe above
117. The two transistor model of the SCR can obtained by D
A bisecting the SCR vertically B bisecting the SCR horizontally
C bisecting the SCRs top two & bottom two D bisecting the SCRs middle two layers
layers
118. The controlling parameter in IGBT is the B
A IG B VGE
C IC D VCE
119. In IGBT, the nlayer above the p+layer is called as the A
A drift layer B injection layer
C body layer D collector Layer
120. In IGBT, the p+layer connected to the collector terminal is called as the B
A drift layer B injection layer
C body layer D collector Layer
121. What is the range of the variable resistor in the equivalent circuit of a unijunction transistor? A
A 50 to 5 k B 6 k to 10 k
C 5 to 50 D 1 to 5
122. IGBT possess B
A low input impedance B high input impedance
C high on-state resistance D second breakdown problems
123. IGBT & BJT both posses ______________ A
A low on-state power losses B high on-state power losses
C low switching losses D high input impedance
124. The three terminals of the IGBT are C
A base, emitter & collector B gate, source & drain
C gate, emitter & collector D base, source & drain
125. In a photo transistor the photocurrent is flowing through B
A emitter base junction B collector base junction
C collector emitter junction D all the mentioned
126. Phototransistor is a form of _____ transistor which is sensitive to light. B
A Unipolar B Bipolar
C Tripolar D Non of these
127. What is the reason phototransistor produces more current than a photodiode? C
A A wider spectrum is accepted by the B The current produced by photons is
phototransistor than the photodiode amplified by the hfeof the transistor
C The phototransistor can heavily doped D At low light conditions, a photodiode is
than the photodiode used.
128. The voltage blocking capability of the IGBT is determined by the D
A injection layer B body layer
C metal used for the contacts D drift layer
129. The structure of the IGBT is a C
A P-N-P structure connected by a MOS gate B N-N-P-P structure connected by a MOS
gate
C P-N-P-N structure connected by a MOS D N-P-N-P structure connected by a MOS
gate gate
130. The _____________ is photosensitive to act as light gathering element. A
A Base-emitter junction B Base-collector junction
C Collector-emitter junction D Base-collector junction and Base-emitter
junction
131. Phototransistors based on hetero-junction using _________ material are known as waveguide C
phototransistors.
A InGaP B InGaAs
C InGaAsP/ InAlAs D ErGaAs
132. In opto isolators, which of the following device receives the light? B
A LED B Light sensitive detector
 C Both D none
133. The optoisolators are categorized into ______ types C
A 1 B 2
C 4 D 6
134. The optoisolator consists of _______ devices C
A LED B Light sensitive detector
C Both D none
135. Which turn on method is preferred for triggering the LASCR? C
A Forward voltage B dv/dt
C light D temperature
136. When the light touches the phototransistor the current ___ into the base region C
A Remains doubles B Constant
C Flow D Not flow
137. Phototransistors are operated in _____ regions. C
A Passive B Hybrid
C Active D saturation
138. Electron-hole pair occurs in _____ biased CB junction. A
A Forward B Reverse
C Hybrid D none
139. Which is a type of Opto-isolator? B
A CMCP793V-500 B MOC3021
C MPU 6050 D L298N
140. The use of optical isolation in the input module side of a controller device is to A
A Reduce the effect of electrical noise and B Prevent the damage process
prevents the damage to the processor
C Provide common ground D Reduces the effect of electrical noise
141. The commercially available circulators exhibit insertion losses around _________ D
A 2 dB B 0.7 dB
C 0.2 dB D 1 dB
142. It is a passive device which allows the flow of optical signal power in only one direction and C
preventing reflections in the backward direction.
A Fiber slice B Optical fiber connector
C Optical isolator D Optical couple
143. Which feature of an optical isolator makes it attractive to use with optical amplifier? B
A Low loss B Wavelength blocking
C Low refractive index D Attenuation
144. How many implementation methods are available for optical isolators? D
A One B Four
C Two D Three
145. A device which is made of isolators and follows a closed loop path is called as a ____________ A
A Circulator B Gyrator
C Attenuator D Connector