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Lecture 31 (4-04-2025)

The document discusses the operation regimes of Bipolar Junction Transistors (BJTs), including cut-off, active, and saturation regions. It details the common emitter configuration, highlighting input and output characteristics, and the effects of reverse bias on the base-collector junction. Additionally, it covers the current gain (β) in active mode and the implications of breakdown effects in BJTs.

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34 views13 pages

Lecture 31 (4-04-2025)

The document discusses the operation regimes of Bipolar Junction Transistors (BJTs), including cut-off, active, and saturation regions. It details the common emitter configuration, highlighting input and output characteristics, and the effects of reverse bias on the base-collector junction. Additionally, it covers the current gain (β) in active mode and the implications of breakdown effects in BJTs.

Uploaded by

Deeksha
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Electrical Sciences (EEE F111)

Lecture No – 31

Bipolar Junction Transistor

Dr. Manish Gupta


EEE
BJT Operation Regime

• Cut-off region: For the Si BJT, if the voltage across the


input junction is less than the 0.7 V. BJT acts as open
circuit

• Active: Input junction is forward biased and output junction


is reverse biased. Useful for amplification

• Saturation: Both input and output junctions are forward


biased. BJT acts as short circuit

BITS Pilani, K K Birla Goa Campus


Problem

Sol.

As iE > 0 A and vCB is negative, diode is in active mode


BITS Pilani, K K Birla Goa Campus
Common Emitter (CE) Configuration:
Input and Output Characteristics

• Emitter terminal is common to both input (B-E) and output (C-E)


terminals

• Active mode: If B-E junction is forward biased and B-C junction


is reverse biased

BITS Pilani, K K Birla Goa Campus


Common Emitter Configuration
Input Characteristics of CE npn Transistor
• Plots of base current (iB) vs collector to emitter voltage (vBE)

• Input characteristics are


obtained at constant vCE .

• Similar like forward biased pn


diode curve

• If vCE > 0 V, curve shift


towards the higher applied
bias due to increase in
depletion in the base region

BITS Pilani, K K Birla Goa Campus


Common Emitter (CE) Configuration
Output Characteristics of CE npn Transistor
• Plots of collector current (iC) vs collector to emitter voltage (vCE)

BITS Pilani, K K Birla Goa Campus


Common Emitter Configuration
Output Characteristics of CE npn Transistor

• If B-C junction is reverse biased vBC < vbi

where vbi is the built in voltage across the base-collector


pn-junction

• Since emitter is a common terminal between input and


output, by KVL,
vBC = vBE – vCE < vbi to reverse bias the B-C junction

vCE > vBE - vbi


• Typical value of VBE = 0.7 V and vbi = 0.5 V

BITS Pilani, K K Birla Goa Campus


Common Emitter Configuration
Output Characteristics of CE npn Transistor
• If vCE > 0.7 – 0.5 or vCE > 0.2 V
Base-Collector junction is in reverse biased condition
Active region:

• Since B-E junction is


forward biased, iB > 0 A

• vCE > 0.2 V, B-C junction is


reverse biased

• Portion of the curve above


iB = 0 A and right side of
the dash line (vCE > 0.2 V)

BITS Pilani, K K Birla Goa Campus


Common Emitter Configuration
Output Characteristics of CE npn Transistor
Saturation Region:

• Portion of the curve above iB = 0 A and left side of the


dash line (vCE < 0.2 V)
Cutoff Region:

• When iB ≤ 0 A V, B-E junction reverse biased

• For the case iB = 0 A, the current flows through the transistor is


ICEO (due to minority carriers). ICEO is the current flows from
collector to emitter when base is open (iB = 0 A)

• The magnitude of the ICEO is very small


BITS Pilani, K K Birla Goa Campus
Common Emitter (CE) Configuration
Output Characteristics with Breakdown Effect
• As we keep on increasing the
vCE i.e. the reverse bias across
the base-collector junction,
current increases abruptly.

• The increase in current is


due to the avalanche effect or
reach- through effect (punch-
through) effect

• Highly undesirable effects

BITS Pilani, K K Birla Goa Campus


Common Emitter Current Gain (𝜷)
If the transistor operates in active regime
𝑖𝑐 = α𝑖𝐸 + ICO (1)

𝑈𝑠𝑖𝑛𝑔 𝑖𝑒 = 𝑖𝐵 + 𝑖𝐶 in equation 1

𝑖𝑐 = α(𝑖𝐵 + 𝑖𝐶) + ICO

α 1
𝑖𝐶 = 𝑖𝐵 + 𝐼𝐶𝑂 (2)
1−α 1−α
1 α
𝑖𝐶 = 𝛽𝑖𝐵 + 𝐼𝐶𝑂 Where 𝛽 =
1−α 1−α

1 1−α+α 1−α α
Now, = = + = 1+𝛽
1−α 1−α 1−α 1−α

BITS Pilani, K K Birla Goa Campus


Common Emitter Current Gain (𝜷)
𝑖𝐶 = 𝛽𝑖𝐵 + (1 + 𝛽) 𝐼𝐶𝑂 (3)

As α = 0.98 or 0.99, 𝛽 > > 1

𝐻𝑒𝑛𝑐𝑒, 𝛽+1 ~ 𝛽

𝑖𝐶 = 𝛽𝑖𝐵 + (1 + 𝛽) 𝐼𝐶𝑂
Since IB >> ICO

𝑖𝐶 = 𝛽𝑖𝐵

BITS Pilani, K K Birla Goa Campus


Thanks

BITS Pilani, K K Birla Goa Campus

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