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Lecture 30 (2-04-2025)

The document provides an overview of Bipolar Junction Transistors (BJTs), detailing their structure, operation, and configurations. It explains the conduction mechanism involving both electrons and holes, and describes the different operational regimes of BJTs: cut-off, active, and saturation. Additionally, it introduces the concept of large signal current gain in BJTs.

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17 views11 pages

Lecture 30 (2-04-2025)

The document provides an overview of Bipolar Junction Transistors (BJTs), detailing their structure, operation, and configurations. It explains the conduction mechanism involving both electrons and holes, and describes the different operational regimes of BJTs: cut-off, active, and saturation. Additionally, it introduces the concept of large signal current gain in BJTs.

Uploaded by

Deeksha
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Electrical Sciences (EEE F111)

Lecture No – 30

Bipolar Junction Transistor

Dr. Manish Gupta


EEE
Bipolar Junction Transistors (BJTs)
• The transistor is a three-layer and three terminal
semiconductor device

• Transistor is designed with either two n-type and one p-


type layers of material (npn transistor) or two p-type and
one n-type layers of material (pnp transistor).

• Bipolar: Electrons and holes participate in conduction

BITS Pilani, K K Birla Goa Campus


Bipolar Junction Transistors (BJTs)

• Unipolar: Either electrons or holes participate in conduction.


For example: MOSFET

• In general, emitter (E) is heavily doped than collector (C) and


base (B) region

• The base region is thin and lightly doped as compared to


emitter and collector regions

• The doping of the collector (moderately doped) is in between


emitter and base doping.

BITS Pilani, K K Birla Goa Campus


BJT Symbol

BITS Pilani, K K Birla Goa Campus


BJT Configurations
Common Base (CB) Common Emitter (CE) Common Collector (CC)

BITS Pilani, K K Birla Goa Campus


BJT Operation
• One p–n junction of a transistor is reverse-biased, whereas
the other is forward-biased

• Emitter-Base junction is forward biased, whereas base-


collector junction is reverse biases
BITS Pilani, K K Birla Goa Campus
BJT Operation
Conduction Mechanism

BITS Pilani, K K Birla Goa Campus


BJT Operation
Conduction Mechanism

• 1: Injected holes lost due to


recombination in the base

• 2: Hole reaching the reverse


biased collector junction

• 3: Thermally generated electrons and holes making up the reverse


saturation current of the collector junction
• 4: Electrons supplied by the base contact for recombination with
holes
• 5: Electrons injected across the forward biased emitter junction
BJT current equation iE = iB + iC
BITS Pilani, K K Birla Goa Campus
BJT Operation Regime

• Cut-off region: For the Si BJT, if the voltage across the


input junction is less than the 0.7 V. BJT acts as open
circuit

• Active: Input junction is forward biased and output junction


is reverse biased. Useful for amplification

• Saturation: Both input and output junctions are forward


biased. BJT acts as short circuit

BITS Pilani, K K Birla Goa Campus


Large Signal Current Gain
𝑖𝑐 = Summation of component 3 and 4, and 2
𝑖𝑐 = 𝑖𝑐,𝑚𝑎𝑗𝑜𝑟𝑖𝑡𝑦 + 𝐼𝑐𝑜
• If alpha denotes the fraction of holes emitted by the emitter
that makes the collector current
So,

BITS Pilani, K K Birla Goa Campus


Thanks

BITS Pilani, K K Birla Goa Campus

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