ANALOG SYSTEM (SOLUTIONS)

1. A semiconductor is formed by … covalent bonds.

2. A semiconductor has … negative temperature coefficient of resistance.
3. Most commonly used semiconductor is … silicon.
4. When a pure semiconductor is heated, its resistance … decreases.
5. As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor …
decreases.
6. A hole and electron in close proximity would tend to … recombine.
7. In a semiconductor, current conduction is due to … both electrons and holes.
8. The random motion of holes and free electrons due to thermal agitation is called … diffusion.
9. Intrinsic semiconductors are those … which are chemically pure and undoped.
10. Intrinsic semiconductor at room temperature will have … equal number of electrons and holes
available for conduction.
11. A pure semiconductor behaves like an insulator at 0 K … True.
12. Which of the following is a semiconductor … Silicon (or Germanium, depending on the options).
13. The energy gap is much more in silicon than in germanium because … silicon atoms are more
tightly bound.
14. A semiconductor in its purest form is called … intrinsic semiconductor.
15. A P-type semiconductor results when … a trivalent impurity is added.
16. An intrinsic semiconductor at absolute zero … behaves as a perfect insulator.
17. A semiconductor has … negative temperature co-efficient of resistance.
18. A doped semiconductor is also known as … extrinsic semiconductor.
19. The donor ion is represented by a positive plus sign. Is it True or False? … True.
20. Initially, the p-type carriers are located to the … valence band of the semiconductor.
21. The displacement of the charges results in … electric current.
22. What is the value of 1 micron? … 1 micron = 1 µm = 10⁻⁶ meters.
23. Which of the following results when the equilibrium is established in a semiconductor? … Equal
generation and recombination of charge carriers.
 2nd sheet

1. Which of the following options doesn’t define the necessity for the existence of the potential
barrier?
Ans: The option that doesn't relate would be something unrelated to charge diffusion or field
formation — for example, “External battery connection” (assuming that's one of the options).
(Please share the options for precise identification.)
2. Under open-circuited conditions the net hole current must be zero. Is this statement true or false?
Ans: True – In equilibrium (open-circuited), the diffusion current of holes is exactly balanced by the
drift current, resulting in zero net hole current.
3. The un-neutralised ions in the neighbourhood of the junction are known as
Ans: Immobile ions or space charge or ionized donor/acceptor atoms.
4. Which of the following doesn’t define the junction which is depleted of mobile charges?
Ans: A correct choice would be something like “Region with high carrier concentration” (again, exact
answer depends on the provided options).
5. Convert 10 micron to meters.
Ans: 10 µm = 10 × 10⁻⁶ m = 1 × 10⁻⁵ meters
6. How many junction/s does a diode consist?
Ans: One junction
7. If the positive terminal of the battery is connected to the anode of the diode, then it is known as
Ans: Forward bias
8. During reverse bias, a small current develops known as
Ans: Reverse saturation current
9. When a forward bias is applied to a diode, the electrons enter which region of the diode?
Ans: P-region (electrons from N side move into P side)
10. The number of injected minority carriers falls off linearly with the increase in the distance from
the junction. Is it true or false?
Ans: False – The fall-off is exponential, not linear.
11. Which of the following statements is correct under forward biased p-n diode?
Ans: The potential barrier decreases allowing majority carriers to cross the junction. (Select the
appropriate option matching this concept.)
12. Deep into the p side the current is a drift current IppI_{pp} of holes sustained by the small electric
field in the semiconductor. Is the statement true or false?
Ans: False – Deep in the neutral region, current is due to diffusion, not drift.
13. What is the thickness of ‘space charge region’ or ‘transition region’ in P-N junction diode?
Ans: Typically 1 to 10 microns, depending on doping levels.
14. If which of the following is doped into a semiconductor (say germanium), a P-N junction is
formed?
Ans: A trivalent or pentavalent impurity, depending on type – forming p-n junction when two
oppositely doped regions are joined.
15. Which of the factors doesn’t change the diode current?
Ans: Junction area, temperature, and applied voltage do affect it. A factor like color or external
shape may be irrelevant (depending on options).
16. The product of mobility of the charge carriers and applied Electric field intensity is known as
Ans: Drift velocity
17. The tendency of charge carriers to move from a region of heavily concentrated charges to a region
of less concentrated charge is known as
Ans: Diffusion
18. A transistor has …
Ans: Three regions – Emitter, Base, Collector
19. The number of depletion layers in a transistor is …
Ans: Two – One at each junction (EB and BC)
20. The base of a transistor is …
Ans: Lightly doped
21. The element that has the biggest size in a transistor is …
Ans: Collector
22. In a PNP transistor, the current carriers are …
Ans: Holes
23. The collector of a transistor is …
Ans: Moderately or heavily doped (but less than the emitter)
24. A transistor is a …
Ans: Current operated device
 3rd sheet

1. In an NPN transistor, … holes are the minority carriers.

2. The emitter of a transistor is … heavily doped.
3. At the base-emitter junction of a transistor, one finds … a forward-biased junction.
4. The input impedance of a transistor is … low in CB, moderate in CE, high in CC (specific value
depends on configuration).
5. Most of the majority carriers from the emitter … flow into the collector.
6. The most commonly used transistor arrangement is … common-emitter (CE) arrangement.
7. The input impedance of a transistor connected in … common-collector (CC) … arrangement is the
highest.
8. The output impedance of a transistor connected in … common-base (CB) … arrangement is the
highest.
9. The power gain in a transistor connected in … common-emitter (CE) … arrangement is the highest.
10. The voltage gain in a transistor connected in … common-emitter (CE) … arrangement is the
highest.
11. As the temperature of a transistor goes up, the base-emitter resistance … decreases.
12. BC 147 transistor indicates that it is made of … silicon.
13. A transistor is connected in CB mode. If it is now connected in CE mode with the same bias
voltages, the values of IEI_E, IBI_B, and ICI_C will … remain the same.
14. In a transistor, signal is transferred from a … low resistance (input) … circuit to a … high resistance
(output) … circuit.
15. The arrow in the symbol of a transistor indicates the direction of … conventional current (emitter
current).
16. The leakage current in CE arrangement is … greater than that in CB arrangement.
17. A heat sink is generally used with a transistor to … dissipate heat.
18. The most commonly used semiconductor in the manufacture of a transistor is … silicon.
19. The collector-base junction in a transistor has … a reverse bias (in active mode).
20. When transistors are used in digital circuits, they usually operate in the … cut-off or saturation
regions.
21. Three different Q points are shown on a DC load line. The upper Q point represents the …
saturation region.
22. A current ratio of IC/IEI_C / I_E is usually less than one and is called … alpha (α).
23. With the positive probe on an NPN base, an ohmmeter reading between the other transistor
terminals should be … a low reading (forward-biased) to emitter and collector.
24. In a CE configuration, an emitter resistor is used for … thermal stability.
25. Voltage-divider bias provides … stable operating point (Q point).
26. To operate properly, a transistor’s base-emitter junction must be forward biased with reverse bias
applied to … the collector-base junction.
27. The ends of a load line drawn on a family of curves determine … cutoff and saturation points.
28. The C-B configuration is used to provide which type of gain? … Voltage gain.
29. The Q point on a load line may be used to determine … the operating point of the transistor.
30. A transistor may be used as a switching device or as a … signal amplifier.
31. With low-power transistor packages, the base terminal is usually the … center lead.
32. Most of the electrons in the base of an NPN transistor flow … into the collector.
33. In a transistor, collector current is controlled by … base current.
34. Open-loop gain of an amplifier is … very high (typically >10⁴ or 100 dB for op-amps).
35. Closed-loop gain of an amplifier … is determined by the feedback network.
36. In a feedback amplifier, sensitivity is equal to …
S=11+AβS = \frac{1}{1 +
A\beta}
(where AA = open-loop gain,
β\beta = feedback factor)
37. In a negative feedback amplifier, the voltage feedback … reduces gain but improves stability and
bandwidth.
38. In a negative feedback amplifier, the current feedback … improves linearity and decreases output
impedance.
39. In a negative feedback amplifier, the series feedback … increases input impedance.
40. Why open-loop op-amp configurations are not used in linear applications?
Ans: Because the gain is too high, even small input causes output saturation.
41. What happens if any positive input signal is applied to an open-loop configuration?
Ans: The output saturates to the positive supply voltage.
42. When a differential amplifier is operated single-ended, … only one input is active, and the other is
grounded.
 4th sheet

Operational Amplifiers (Op-Amps)

1. In which configuration does the op-amp function as a high gain amplifier?
Open-loop configuration.
2. Open loop op-amp configuration has
Very high gain and no feedback.
3. Which of these given factors determine the output voltage of an op-amp?
Difference between the input terminals (V⁺ - V⁻) and the open-loop gain.
4. Which is not the ideal characteristic of an op-amp?
Limited bandwidth (Ideal op-amp has infinite bandwidth).
5. What will be the output voltage obtained for an ideal op-amp?
Either positive or negative saturation, depending on input difference.
6. In differential-mode, ……………
The output is proportional to the voltage difference between the inputs.
7. Ideal op-amp has infinite voltage gain and the Vdiff is very small because
Negative feedback forces the voltage difference towards zero.
8. An ideal op-amp has infinite bandwidth because
It can amplify any frequency without attenuation.
9. Which of the following electrical characteristics is not exhibited by an ideal op-amp?
Finite input resistance.
10. Current cannot flow to ground through …….
An ideal op-amp’s input terminals.
11. The common-mode voltage gain of a differential amplifier is equal to RC divided by ……..
2RE (where RE is the emitter resistance).
12. The differential voltage gain of a differential amplifier is equal to Rc divided by …….
r’e (intrinsic emitter resistance).
13. The input stage of an Op-amp is usually a ……….
Differential amplifier.
14. A differential amplifier …………….
Amplifies the difference between two input signals.
15. The common-mode voltage gain is ……
Ideally zero, but practically very small.
16. A common-mode signal is applied to ……….
Both inputs of the differential amplifier equally.
17. The input impedance of a differential amplifier equals r’e times ……
(β + 1), where β is the transistor current gain.
 18. The tail current in a differential amplifier equals …….
The sum of emitter currents of both transistors.
19. The tail current of a differential amplifier is …….
Usually set by a current source.
20. The input offset current in the op-amp equals the ……….
Difference in bias currents of the input terminals.
21. The Op-amp can amplify
AC and DC signals.
22. A voltage follower ……….
Has unity gain and buffers the input from the output.
23. The differential-mode gain is ………..
Very high in an op-amp.
24. The common-mode gain is ………..
Very low (ideally zero).
25. In a Negative Feedback amplifier the shunt feedback
Reduces output impedance.
26. Negative feedback in an amplifier improves
Stability, bandwidth, and linearity.
27. For a shunt-shunt negative feedback amplifier
Feedback is applied in parallel to both input and output.
28. An amplifier with negative feedback
Has reduced gain but improved performance.
29. Which one is not a characteristic of the negative feedback in an amplifier?
Increases noise (It usually reduces noise).
30. The number of ways a feedback network can be connected between output and input of an
amplifier are
Four (series-shunt, shunt-series, series-series, and shunt-shunt).
31. One of the effects of negative feedback in amplifiers is to
Improve bandwidth.

Semiconductors
32. A semiconductor has generally ……………… valence electrons.
Four
33. The resistivity of pure germanium under standard conditions is about ……….
60 Ω·cm
34. The resistivity of a pure silicon is about ……………
2300 Ω·cm
35. The strength of a semiconductor crystal comes from ……..
Covalent bonding.
36. Addition of pentavalent impurity to a semiconductor creates many ……..
Free electrons.
37. An n-type semiconductor is ………
Negatively charged due to extra electrons.
38. A hole in a semiconductor is defined as …………….
An absence of an electron in the valence band.
39. The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.
1 part in 10⁶ to 10⁸.
40. The battery connections required to forward bias a pn junction are ……
Positive to p-type, negative to n-type.
41. The barrier voltage at a pn junction for germanium is about ………
0.3 V
42. In the depletion region of a pn junction, there is a shortage of ……..
Free charge carriers (electrons and holes).
 5th sheet

PN Junction and Diodes

1. A reverse bias PN junction has …………
High resistance and a small leakage current.
2. A PN junction acts as a ……….
Diode (unidirectional current device).
3. A reverse biased PN junction has resistance of the order of
Megaohms (MΩ).
4. The leakage current across a PN junction is due to …………..
Minority carriers.