Dynamic Cmos
Dynamic Cmos
Lecture 14: Advanced CMOS Logic (Dynamic CMOS, Domino CMOS, NORA CMOS etc.)
14.1 Dynamic CMOS Logic
It was noted earlier that static CMOS logic with a fan-in of N requires 2N devices. A variety of approaches
were presented to reduce the number of transistors required to implement a given logic function including
pseudo-NMOS, pass transistor logic, etc. The pseudo-NMOS logic style requires only N + 1 transistors to
implement an N input logic gate, but unfortunately it has static power dissipation. In this section, an alternate
logic style called dynamic logic is presented that obtains a similar result, while avoiding static power
consumption. With the addition of a clock input, it uses a sequence of precharge and conditional evaluation
phases.
Basic Principles
The basic construction of an (n-type) dynamic logic gate is shown in the following figure. The PDN (pull-
down network) is constructed exactly as in complementary CMOS. The operation of this circuit is divided
into two major phases: precharge and evaluation, with the mode of operation determined by the clock signal
CLK ().
Precharge
When CLK = 0, the output node Out is precharged to VDD by the PMOS transistor Mp. During that time,
the evaluate NMOS transistor Me is off, so that the pull-down path is disabled. The evaluation FET
eliminates any static power that would be consumed during the precharge period (this is, static current
would flow between the supplies if both the pull down and the precharge device were turned on
simultaneously).
Evaluate
For CLK = 1, the precharge transistor Mp is off, and the evaluation transistor Me is turned on. The output
is conditionally discharged based on the input values and the pull-down topology. If the inputs are such that
the PDN conducts, then a low resistance path exists between Out and GND and the output is discharged to
GND. If the PDN is turned off, the precharged value remains stored on the output capacitance CL, which is
a combination of junction capacitances, the wiring capacitance, and the input capacitance of the fan-out
gates. During the evaluation phase, the only possible path between the output node and a supply rail is to
GND. Consequently, once Out is discharged, it cannot be charged again till then next precharge operation.
The inputs to the gate can therefore make at most one transition during evaluation.
14.2 A number of important properties can be derived for the dynamic logic gate:
• The logic function is implemented by the NMOS pull-down network. The construction of the PDN
proceeds just as it does for static CMOS.
• The number of transistors (for complex gates) is substantially lower than in the static case: N + 2 versus
2N.
• It is non-ratioed. The sizing of the PMOS precharge device is not important for realizing proper
functionality of the gate. The size of the precharge device can be made large to improve the low-to-high
transition time (of course, at a cost to the high-to low transition time). There is however, a trade-off with
power dissipation since a larger precharge device directly increases clock-power dissipation.
• It only consumes dynamic power. Ideally, no static current path ever exists between VDD and GND. The
overall power dissipation, however, can be significantly higher compared to a static logic gate.
• The logic gates have faster switching speeds. There are two main reasons for this. The first (obvious)
reason is due to the reduced load capacitance attributed to the lower number of transistors per gate and the
single-transistor load per fan-in. Second, the dynamic gate does not have short circuit current, and all the
current provided by the pull-down devices goes towards discharging the load capacitance.
The dynamic logic circuits offer following advantages over standard CMOS logic circuits.
Low power dissipation
Small area due to less number of transistors
Large noise margin.
np-CMOS logic exploits the duality between n-tree and p-tree logic gates to eliminate the cascading
problem. If the n-tree gates are controlled by CLK, and p-tree gates are controlled using CLK, n-tree gates
can directly drive p-tree gates, and vice-versa. Similar to Domino, n-tree outputs must go through an
inverter when connecting to another n-tree gate. During the precharge phase (CLK = 0), the output of the
n-tree gate, Out1, is charged to VDD, while the output of the p-tree gate, Out2, is pre-discharged to 0V.
Since the n-tree gate connects PMOS pull-up devices, the PUN of the p-tree is turned off at that time.
During evaluation, the output of the n-tree gate can only make a 1®0 transition, conditionally turning on
some transistors in the p-tree. This ensures that no accidental discharge of Out2 can occur. Similarly, n-tree
blocks can follow p-tree gates without any problems, as the inputs to the n-gate are precharged to 0. A
disadvantage of the np-CMOS logic style is that the p-tree blocks are slower than the n-tree modules, due
to the lower current drive of the PMOS transistors in the logic network. Equalizing the propagation delays
requires extra area.
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Reference:
1. CMOS Digital Integrated Circuit, S.M.Kang & Y.Leblebici, TMH.
2. VLSI Design, Debaprasad Das, OUP
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Prepared By
Tapas Tewary and Subham Pramanik, ECE Department, Academy of Technology