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MOS Characterstics: Presented by P Jaswanth

The Vi characteristics of MOSFET are explained in detail and the derivation of vi characteristics are presented

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Pullepu Jaswanth
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64 views14 pages

MOS Characterstics: Presented by P Jaswanth

The Vi characteristics of MOSFET are explained in detail and the derivation of vi characteristics are presented

Uploaded by

Pullepu Jaswanth
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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MOS Characterstics

Presented Silicon dioxide

By
P Jaswanth
KeyPoints
• As Vg increases, electron density in the channel increases, the resistance between source and drain
decreases(channel resistance)
• Here the channel resistance is controlled by mainly gate.
• The gate current Ig is zero(Ig=0)
• If thickness is decreased the capacitance of the
device decreases therefore electron density
increases(Q=CV)
Width significance

• The W/L ratio is the important parameter in mosfet to adjust the


current as by the technology node the L is fixed based on the design
we may vary the width.
Why electron mobility is more?
• The mobility is proportional to the carrier relaxation time and inversly
proportionnal to the carrier effective mass.
• The electron mobilty is often greater than hole mobility because quite often,
the electron effective mass is smaller than hole effective mass.
• The relaxation times are often of the same order of magnitude for electrons
and holes and therefore, they do not make too much difference.
• Relaxation time is defined as the time interval between two successive
collisions of electrons in a conductor when current flows through it
V-I characterstics
• Before going to vi characterstics we should know the Behaviour of the channel
• Case-1: Vgs>Vth,Vs=Vd=0
1.Turned on,but no current
2.There will be equal proportional of electron density across the source and
drain
• Case -2: Vgs>Vth, Vs=0,Vd>0
1.Current flowing though the resistance path
2.Voltage along the channel increases
3.Electron density will vary from source to drain,so that charge also varies
(Q=CV)
4.Capactiance value at source is maximum and at drain it is minimum
Derivation of V/I characterstics
• Channel Charge Density
Case-i: Vgs>Vth, Vd=0
Qch(total)=WL*Cox(Vgs-Vth)
Qch(density)=W*Cox(Vgs-Vth)
Case-ii: Vgs>Vth, Vd>0
Qch(density)=W*Cox(Vgs-Vth-V(x))
• Drain current
Contd..
• Id=UnCoxW/L[(Vgs-Vth)Vds-1/2 sqr(Vds)].This equation is
valid only for Vgs>Vth

• If Vds<<2(Vgs-Vth)
Id=UnCoxW/L[(Vgs-Vth)Vds
Ron=1/ UnCoxW/L[(Vgs-Vth)]
• Electronically adjustable resistor.A MOSFET can act as voltage
dependent resistor if Vds<<2(Vgs-Vth)
• Ron becomes infinity as Vgs=Vth
• Mos device can act as a switch in this region (linear or triode
region)
Id for Vds>Vgs-Vth
Drain characterstics
• Here Vgs is kept constant and Vds,Id are varied for different variables and are plotted
• For different Vgs values the characterestics are plotted

NMOS- Vds Vs Id Characterstics(Output Characterstics)


Observations:
• If Vg is one threshold greater than Vd then we are in triode region

• If Vg is one threshold lesser than Vd then we are in saturation region

• In saturation region the MOSFET can be used a constant current source


Channel Length Modulation

• As the Vds increases the effective length decreases ,as the resistance is proportional to length,overall
resistance decreases and the current Id increases that doesn’t stay on constant
Transfer Characterstics
• Here Vds is kept constant and Vgs,Id variables are plotted for different values

NMOS -Vgs Vs Id (Transfer Characterstics)


Transconductance:
Thank You

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