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Lect. 23 MOSFET Current Source and Active Load PDF

The document discusses MOSFET current mirrors and active loads. It explains that a MOSFET current mirror can be used to create a constant current source using two identical MOSFETs. The current flowing out of the second MOSFET (IO) will match the reference current (IREF) as long as the gate-source voltages are equal. However, mismatches may occur due to channel length modulation as the output voltage increases. An active load, such as another MOSFET, can be used to improve the current mirror by providing a high "drain" resistance and bias current. The document also provides an example of calculating the voltage gain of a current source amplifier that uses a PMOS current mirror for its active load.

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0% found this document useful (0 votes)
231 views9 pages

Lect. 23 MOSFET Current Source and Active Load PDF

The document discusses MOSFET current mirrors and active loads. It explains that a MOSFET current mirror can be used to create a constant current source using two identical MOSFETs. The current flowing out of the second MOSFET (IO) will match the reference current (IREF) as long as the gate-source voltages are equal. However, mismatches may occur due to channel length modulation as the output voltage increases. An active load, such as another MOSFET, can be used to improve the current mirror by providing a high "drain" resistance and bias current. The document also provides an example of calculating the voltage gain of a current source amplifier that uses a PMOS current mirror for its active load.

Uploaded by

dipa
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Lect.

23: MOSFET Current Mirror and Active Load

Various bias techniques for MOSFET circuits

How do we make
a constant current source
with MOSFETs?

Electronic Circuits 1 (09/2) Prof. Woo-Young Choi


Lect. 23: MOSFET Current Mirror and Active Load

Constant current source: 1 ' ⎛W ⎞


= kn ⎜ ⎟ (VGS − Vt )
2
I D1
2 ⎝ L ⎠1

VDD − VGS
I D1 = I REF =
R
Assuming Q1, Q2 have same properties (kn’),

1 ' ⎛W ⎞
kn ⎜ ⎟ (VGS − Vtn )
2
IO = I D 2 =
2 ⎝ L ⎠2

IO (W / L ) 2
=
Î Current
C t mirror
i
I REF (W / L )1
Limitation on Vo? VO ≥ VGS − Vt

Electronic Circuits 1 (09/2) Prof. Woo-Young Choi


Lect. 23: MOSFET Current Mirror and Active Load

Mismatches between IREF and IO


Due to channel-length modulation For two Q1 and Q2
IO = IREF only if VDS1= VDS2 Î V0=VGS

As VO increased, IO increases from IREF

VO − VGS
I O = I REF +
r0

Comparison with BJT current mirror?

Electronic Circuits 1 (09/2) Prof. Woo-Young Choi


Lect. 23: MOSFET Current Mirror and Active Load
VDD=3V, Q1 and Q2 are identical with 1 ' ⎛W ⎞
I D1 = I REF = kn ⎜ ⎟ (VGS − Vt )2
L= 1μm, W=100μm, Vt=0.7V, kn’=200μA/V2, 2 ⎝ L ⎠1
ro = 200kΩ
1
100 = × 200 × 10 × (VGS − Vt )2 ,
1. Determine R for IO=100μA. 2
2 What is the lowest value for VO?
2. (VGS − Vt ) = 0.316,
0 316 VGS = 1.016
1 016
3. How much IO changes when VO changes 1V?
VDD − VGS 3 − 1.016
R= = = 19.84kΩ
I REF 0.1mA
0 1mA

VO min = VGS − Vt = VOV = 0.316 V

ΔVO 1V
ΔI O = = = 5μ A
ro 2 200k Ω

Electronic Circuits 1 (09/2) Prof. Woo-Young Choi


Lect. 23: MOSFET Current Mirror and Active Load

(W / L ) 2
I 2 = I REF
( W / L )1
(W / L ) 3
I 3 = I REF
( W / L )1
I3 = I4

(W / L ) 5
I5 = I4
(W / L ) 4

Current-steering circuits: current source (Q5), current sink (Q2)

Electronic Circuits 1 (09/2) Prof. Woo-Young Choi


Lect. 23: MOSFET Current Mirror and Active Load

CS amplifier
f

Where is RD ?

Current source as a resistor Î Active load

(Remember Q2 has rO)

Electronic Circuits 1 (09/2) Prof. Woo-Young Choi


Lect. 23: MOSFET Current Mirror and Active Load
Large change in vO with vI change!
Î Large amplifier gain
Load-line analysis
Q1

Q2

v = VDD-vo

vo= VDD - v

Electronic Circuits 1 (09/2) Prof. Woo-Young Choi


Lect. 23: MOSFET Current Mirror and Active Load

Gain for CS amplifier with PMOS current mirror

-gm (rO1 || rO2)

PMOS current mirror provides


large “Drain” resistance (Active Load)
as well as bias current!

Î Good for IC!

Electronic Circuits 1 (09/2) Prof. Woo-Young Choi


Lect. 23: MOSFET Current Mirror and Active Load

VDD=3V, Vtn=|Vtp|=0.6V, kn’=200μA/V2, kp’=65μA/V2,


L=0 4μm W=4μm,
L=0.4μm, W=4μm ro1=200kΩ,
=200kΩ ro2,3 = 100kΩ,
100kΩ
IREF=100μA. 1. Aυ = − gm 1 ( ro1 || ro 2 )

' ⎛W ⎞ 4
1. What is the small-signal voltage gain, vO/vI? g m 1 = 2 k n ⎜ ⎟ I REF = 2 × 200 × × 100 = 0.63mA/V
⎝ L ⎠1 0.4
2 What is the maximum vO for which the above is valid?
2.
∴ Aυ = −0.63(mA/V) ⋅ (200 || 100)(kΩ ) = −42

1 ' ⎛W ⎞
( )
2 VSD ,3
2. For Q 3 , I REF = − Vtp +
2 p ⎜⎝ L ⎟⎠ 3 SG ,33
k V
ro
1 ⎛ 4 ⎞ VSG ,3
( )
2
100 = × 65 ⎜ ⎟ SG
V − 0.6 +
2 ⎝ 0.4 ⎠ 100 K
∴VSG ~ 1.12
1 12V

For vO ,max , VSD 2,min = VSG − | Vtp |= 1.12 − 0.6 = 0.52V


∴ vO ,max
max = VDD − VSD 22,min
min = 2.48V

Electronic Circuits 1 (09/2) Prof. Woo-Young Choi

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