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Tutorial Sheet - 2

This document contains 6 tutorial problems related to n-MOSFET transistors. Problem 1 asks to calculate the process transconductance given gate oxide thickness and electron mobility. Problem 2 asks about the saturation or non-saturation of an n-MOSFET operating at VGS = VDS = 5 V. Problem 3 calculates drain current for an n-MOSFET operating at specific voltages and asks about the operating region. Problem 4 calculates threshold voltages for different body-bias voltages. Problem 5 calculates the body-bias coefficient given transistor parameters. Problem 6 calculates the output voltage for an n-MOSFET circuit at two input voltages.

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Akshay Goel
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79 views1 page

Tutorial Sheet - 2

This document contains 6 tutorial problems related to n-MOSFET transistors. Problem 1 asks to calculate the process transconductance given gate oxide thickness and electron mobility. Problem 2 asks about the saturation or non-saturation of an n-MOSFET operating at VGS = VDS = 5 V. Problem 3 calculates drain current for an n-MOSFET operating at specific voltages and asks about the operating region. Problem 4 calculates threshold voltages for different body-bias voltages. Problem 5 calculates the body-bias coefficient given transistor parameters. Problem 6 calculates the output voltage for an n-MOSFET circuit at two input voltages.

Uploaded by

Akshay Goel
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Tutorial Sheet – 2

1. Consider an n‐MOSFET that has a gate oxide thickness tox=12 nm and an electron
mobility of μn=540 cm2 /V‐sec. Find the process transconductance.

2. An n‐MOSFET with W=20 μm and L=0.5 μm is built in a process where k’ n=120 μA/V2
and VTn=0.65 V. The voltages are set to a value of VGS = VDS = 5 V.
(a) Is the transistor saturated or non‐saturated?

3. Consider an n‐MOSFET with the following characteristics:


tox=10 nm, μn=520 cm2 /V‐sec , W/L=8, VTn=0.7 V
(a) Calculate the drain current for VGS=2 V, VDS= 2 V.
(b) If the voltage values are VDS=1.2 V and VGS=2 V, find the operating region and current

4. Consider an n‐MOSFET where VTon=0.7 V, γ=0.08 V1/2 and 2ІФFІ=0.58 V.


Calculate the threshold voltage for the given body‐bias voltage VSB = 1 V, 2 V and 3 V.

5. An n‐MOSFET has a gate oxide with a thickness of tox=120 Å. The p‐type bulk region is
Doped with boron at a density of Na=8x1014 /cm3. It is given that VT0n=0.55 V. Calculate the
body‐bias coefficient γ.

6. For circuit given below with VDD=5 V, k'n= 20 μA/V2 , Vt0= 1V, RL= 200 KΩ, and W/L = 2.
Compute the output voltage when input is Vin (a) 1.5 V (b) 3 V

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